Temperature sensor device and methods thereof

• US 7,579,898 B2
• Filed: 07/31/2006
• Issued: 08/25/2009
• Est. Priority Date: 07/31/2006
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Inventors: Pietri, Stefano, Olmos, Alfredo, Soldera, Jefferson Daniel De Barros
• Primary Examiner(s): Donovan; Lincoln
• Assistant Examiner(s): Houston; Adam D
• Application Number:
  US11/496,359
• Publication Number:
  US 20080061863A1
• Time in Patent Office: 1,121 Days
• Field of Search: 327/512, 327/513
• US Class Current: 327/512
• CPC Class Codes: G01K 7/015 using microstructures, e.g. made of silicon
• CPC Class Codes: H01L 23/34 Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements thermal treatment apparatus H01L21/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A device having a temperature sensor device is disclosed. The temperature sensor device includes a complementary to absolute temperature (CTAT) module and a reference module. Both the temperature sensor and the reference voltage module provide signals, that vary in a complementary relationship with the variation in temperature. While the signals can be voltages or currents, for purposes of discussion the signals are discussed in terms of voltages herein. The reference module provides a signal that has a relatively small variation with temperature as compared to the variation in a signal provided by the CTAT module. The signals are provided to a comparator, which provides a temperature control signal based on a comparison of the input signals.

Claims

1. A device, comprising:

a first transistor comprising a control electrode coupled to a first voltage reference, a first current electrode to provide a CTAT signal relative a voltage at the control electrode, and a second current electrode coupled to the first voltage reference;

a second transistor comprising a control electrode coupled to a second voltage reference, a first current electrode to provide a PTAT signal, and a second current electrode coupled to the first voltage reference;

a comparator comprising a first input coupled to the first current electrode of the first transistor, a second input coupled to the first current electrode of the second transistor, and an output; and

a first level shifter coupled between the first transistor and the first input of the comparator.

2. The device of claim 1, wherein the first transistor is a bipolar junction transistor and the second transistor is a field effect transistor.

3. The device of claim 1, further comprising:

a power control module comprising an input coupled to the output of the comparator, wherein the power control module is configured to change a first power mode of a first module of an integrated circuit device based on a signal provided by the comparator while maintaining a power mode of a second module of the integrated circuit device.

4. The device of claim 1, wherein the first level shifter comprises a third transistor comprising a first current electrode coupled to the second voltage reference, a second current electrode coupled to the second voltage reference, and a control electrode coupled to the first current electrode of the first transistor.

5. The device of claim 4, wherein the device further comprises a fourth transistor comprising a first current electrode coupled to the second input of the comparator, a second current electrode coupled to the first voltage reference, and a control electrode coupled to the first current electrode of the second transistor.

6. The device of claim 5, wherein the third transistor and the fourth transistor are bipolar junction transistors.

7. The device of claim 5, further comprising:

a fifth transistor comprising a first current electrode coupled to the control electrode of the second transistor, a second current electrode coupled to the first current electrode of the second transistor, and a control electrode coupled to the first current electrode of the fifth transistor.

8. The device of claim 7, wherein the fifth transistor is a field effect transistor.

9. The device sensor of claim 7, further comprising:

a first current source comprising an input and an output coupled to the first current electrode of the third transistor, the output to provide a first current based on a signal at the input.

10. The device of claim 9, wherein the first current source comprises a sixth transistor comprising a first current electrode coupled to the second voltage reference, a second current electrode coupled to the first current electrode of the third transistor, and a control electrode coupled to a current reference.

11. The device of claim 10, further comprising:

a second current source comprising an input and an output coupled to the first current electrode of the fourth transistor, the output to provide a first current based on a signal at the input;

a third current source comprising an input and an output coupled to the first current electrode of the fifth transistor, the output to provide a first current based on a signal at the input.

12. The device of claim 11, wherein the second current source comprises a seventh transistor comprising a first current electrode coupled to the second voltage reference, a second current electrode coupled to the first current electrode of the fourth transistor, and a control electrode coupled to the current reference, and the third current source comprises an eighth transistor comprising a first current electrode coupled to the first voltage reference, a second current electrode coupled to the first current electrode of the fifth transistor, and a control electrode coupled to the current source.

13. The device of claim 1, further comprising:

a power control module comprising an input coupled to the output of the comparator, wherein the power control module controls a power level of an integrated circuit device based on a state of a signal provided at the output of the comparator.

14. The device of claim 13, wherein the power control module controls a voltage domain of the integrated circuit device.

15. The device of claim 13, wherein the power control module controls gating of a clock of the integrated circuit device.

16. A method, comprising:

generating a first signal that varies inversely with respect to temperature at a first rate, the first signal being an electrical signal;

generating a second signal that varies inversely with respect to temperature at a second rate, the second rate different from the first rate;

providing a temperature level indication signal based on a comparison of the first signal to the second signal; and

gating a clock signal based on the temperature level indication signal.

17. The method of claim 16, wherein a voltage level of the first signal and a voltage level of the second signal are complementary to absolute temperature (CTAT) voltage levels.

18. The method of claim 16, wherein gating the clock signal comprises:

gating the clock signal to place a first module of an integrated circuit device in a low-power mode in response to the temperature level indication being at first logic level.

19. The method of claim 16, wherein gating the clock signal comprises:

gating the clock signal to place a first module of an integrated circuit device in a normal-power mode in response to the temperature level indication being at a second logic level.

20. A device, comprising:

means for generating a first signal that varies inversely with respect to temperature at a first rate;

means for generating a second signal that varies inversely with respect to temperature at a second rate, the second rate different from the first rate; and

means for providing a temperature level indication signal based on a comparison of the first signal to the second signal; and

means for controlling a first power mode of a first module of an integrated circuit device based on the temperature level indication signal while maintaining a second power mode of a second module of the integrated circuit device.