Method for suppressing charging of component in vacuum processing chamber of plasma processing system and plasma processing system

• US 7,592,261 B2
• Filed: 03/27/2003
• Issued: 09/22/2009
• Est. Priority Date: 04/11/2002
• Status: Expired due to Fees

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Ueda, Takehiro, Suzuki, Kouki, Koizumi, Katsuyuki
• Primary Examiner(s): Norton; Nadine G
• Assistant Examiner(s): Dahimene; Mahmoud
• Application Number:
  US10/509,338
• Publication Number:
  US 20050146277A1
• Time in Patent Office: 2,371 Days
• Field of Search: 438/706, 315/111.21, 315/111.81, 315/111.71, 361/234, 414/217, 156/345.32, 156/345.37, 156/345.43
• US Class Current: 438/706
• CPC Class Codes: H01J 2237/0206 Extinguishing, preventing or controlling unwanted discharges
• CPC Class Codes: H01J 37/32431 Constructional details of the reactor

Abstract

When the state of the vacuum processing chamber is switched to an idle state in which an insulating fluid is circulated while a semiconductor wafer W is not placed in the vacuum processing chamber and no plasma is generated in the vacuum processing chamber, nitrogen gas purging (N₂ purging) of the inside of the vacuum processing chamber is started, and the pressure in the vacuum processing chamber is controlled to a predetermined level, for example, about 27 Pa (200 mTorr). This makes it possible to prevent a component in the vacuum processing chamber of a plasma processor from being charged to high voltage, so that an insulative material can be protected against breakdown caused by electric discharge or the like.

Claims

1. A semiconductor device manufacturing method using a plasma processor, wherein said plasma processor includes:

a vacuum processing chamber in which plasma is generated to plasma-process an object to be processed;

a block having a flow path of a heat medium in an inner part thereof; and

a component in the vacuum processing chamber disposed to be in contact with the block and made at least partly of an insulative material, and

wherein said plasma processor controls a temperature of the component in the vacuum processing chamber by circulating an insulating fluid as the heat medium in the flow path, and

said method comprising;

carrying the object to be processed into the vacuum processing chamber, generating plasma to plasma-process the object to be processed, and carrying the object to be processed that has undergone the processing out of the vacuum processing chamber;

between said processing of the object to be processed and processing of a subsequent object to be processed, circulating the insulating fluid in the flow path while the object to be processed is not in the vacuum processing chamber and no plasma is generated, and controlling pressure in the vacuum processing chamber to a predetermined pressure while supplying inert gas as a purging gas into the vacuum processing chamber; and

determining and applying a pressure of said inert gas on a Paschen'"'"'s curve so that electrical charging of the component in the vacuum processing chamber is suppressed.

2. The semiconductor device manufacturing method as set forth in claim 1, wherein the insulating fluid is a fluorinated refrigerant.

3. The semiconductor device manufacturing method as set forth in claim 1,

wherein volume resistivity of the insulative material is 10⁹ Ω

-cm or higher.

4. The semiconductor device manufacturing method as set forth in claim 3,

wherein the insulative material is ceramic.

5. The semiconductor device manufacturing method as set forth in claim 4,

wherein the component in the vacuum processing chamber is an electrostatic chuck and the block is a lower electrode made of aluminum.

6. The semiconductor device manufacturing method as set forth in claim 5,

wherein the vacuum processing chamber has an upper electrode disposed in parallel with the lower electrode at a position a predeteremined distance away from the lower electrode, and the predetermined pressure is not lower than 0.6 times nor higher than 2.0times a pressure that is calculated based on a minimum sparking condition of a Paschen'"'"'s curve determined for each kind of the inert gas when a discharge distance is defined as the predetermined distance.

7. The semiconductor device manufacturing method as set forth in claim 1,

wherein the inert gas is nitrogen gas.

8. The semiconductor device manufacturing method as set forth in claim 1,

wherein the predetermined pressure is intermittently controlled.

9. The semiconductor device manufacturing method as set forth in claim 8,

wherein the intermittent pressure control is performed while a flow rate of the inert gas is varied.

10. The semiconductor device manufacturing method as set forth in claim 8,

wherein the intermittent pressure control is performed by a pressure control device while a flow rate of the inert gas is fixed.

11. The semiconductor device manufacturing method as set forth in claim 1,

wherein the block is made of a conductive material.