Distributed Bragg Reflector for optoelectronic device

• US 7,596,165 B2
• Filed: 03/28/2005
• Issued: 09/29/2009
• Est. Priority Date: 08/31/2004
• Status: Active Grant

• Current Assignee: II-VI Delaware, Inc. (Coherent Corp.)
• Original Assignee: Finisar Corporation (II-VI Incorporated)
• Inventors: Johnson, Ralph H.
• Primary Examiner(s): Harvey; Minsun
• Assistant Examiner(s): Zhang; Yuanda
• Application Number:
  US11/091,656
• Publication Number:
  US 20060045162A1
• Time in Patent Office: 1,646 Days
• Field of Search: 372/45.01, 372/46.013, 372/96, 372/43.01, 372/46.01, 372/98, 372/99
• US Class Current: 372/99
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18338 Non-circular shape of the structure
• CPC Class Codes: H01S 5/18361 Structure of the reflectors, e.g. hybrid mirrors
• CPC Class Codes: H01S 5/3054 p-doping
• CPC Class Codes: H01S 5/3077 plane dependent doping
• CPC Class Codes: H01S 5/3211 characterised by special cladding layers, e.g. details on band-discontinuities
• CPC Class Codes: H01S 5/3432 the whole junction comprising only (AI)GaAs
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

A Distributed Bragg Reflector (DBR) that has relatively low light absorption, relatively low electrical resistance, and/or relatively good thermal conductivity. The DBR may include a first mirror layer and a second mirror layer, with an interface therebetween. A step transition is provided in the aluminum concentration and in the doping concentration at or near the interface between the first mirror layer and the second mirror layer. To reduce optical absorption, the interface between the first and second mirror layers may be positioned at or near a null in the optical electric field within the DBR. A graded junction may also be provided. The graded junction may be more lightly doped, have a graded aluminum concentration, and may be placed at or near a peak in the optical electric field.

Claims

1. A Distributed Bragg Reflector (DBR), comprising:

a first mirror layer having a substantially uniform doping concentration;

a second mirror layer positioned adjacent to the first mirror layer and the second mirror layer having an aluminum concentration that is higher than an aluminum concentration in the first mirror layer, wherein a transition from the aluminum concentration in the first mirror layer directly to the aluminum concentration in the second mirror layer takes the form of an upward step change in aluminum concentration that takes place entirely within the second mirror layer; and

the second mirror layer having a doping concentration that is at or above 1E19atoms/cm³ proximate the first mirror layer, and wherein a doping level change in the second mirror layer coincides substantially with the upward step change in aluminum concentration.

2. A Distributed Bragg Reflector (DBR) according to claim 1 wherein the first mirror layer includes a doping concentration, and the transition from the doping concentration in the first mirror layer to the doping concentration in the second mirror layer includes an upward step.

3. A Distributed Bragg Reflector (DBR) according to claim 2 wherein the step in concentration between the aluminum concentration in the first mirror layer to the aluminum concentration in the second mirror layer and the step in doping concentration between any doping concentration in the first mirror layer to the doping concentration in the second mirror layer are coincident or substantially coincident.

4. A Distributed Bragg Reflector (DBR) according to claim 1 wherein the first mirror layer includes a doping concentration that is at or below about 6E18 atoms/cm³.

5. A Distributed Bragg Reflector (DBR) according to claim 4 wherein the doping concentration in the first mirror layer is at or below about 1E18 atoms/cm³.

6. A Distributed Bragg Reflector (DBR) according to claim 1 wherein the doping concentration in the second mirror layer is at or above about 5E19 atoms/cm³ proximate the first mirror layer.

7. A Distributed Bragg Reflector (DBR) according to claim 1 wherein the first mirror layer includes an aluminum concentration that is below about 40%, and the second mirror layer includes an aluminum concentration that is above about 60%.

8. A Distributed Bragg Reflector (DBR) according to claim 1 wherein the aluminum concentration of the first mirror layer is zero or substantially zero.

9. A Distributed Bragg Reflector (DBR) according to claim 1 wherein the first mirror layer is GaAs, and the second mirror layer is AlAs.

10. A Distributed Bragg Reflector (DBR) according to claim 1 wherein, during use, the Distributed Bragg Reflector (DBR) has an optical electric field that is produced by resonant light, the optical electric field having a number of nulls and a number of peaks, wherein an interface between the first mirror layer and the second mirror layer is located at or near a null in the optical electric field.

11. A Distributed Bragg Reflector (DBR) according to claim 1 wherein the first mirror layer has an optical thickness of about ¼

lambda.

12. A Distributed Bragg Reflector (DBR) according to claim 11 wherein the second mirror layer has an optical thickness of about ¼

lambda.

13. A Distributed Bragg Reflector (DBR) according to claim 1 further comprises:

a third mirror layer positioned adjacent to the first mirror layer such that the first mirror layer is between the third mirror layer and the second mirror layer, the third mirror layer having an aluminum concentration that is higher than the aluminum concentration in the first mirror layer, wherein the transition from the aluminum concentration in the first mirror layer to the aluminum concentration in the third mirror layer includes a grade;

the third mirror layer having a doping concentration that is below the doping concentration in the second mirror layer.

14. A Distributed Bragg Reflector (DBR) according to claim 13 wherein the third mirror layer includes a doping concentration that is at or below about 6E18 atoms/cm³.

15. A Distributed Bragg Reflector (DBR) according to claim 14 wherein the third mirror layer includes a doping concentration that is at or below about 2E 18 atoms/cm³.

16. A Distributed Bragg Reflector (DBR) according to claim 13 wherein the third mirror layer includes a doping concentration that is substantially the same as the doping concentration of the first mirror layer.

17. A Distributed Bragg Reflector (DBR) according to claim 13 wherein, during use, the Distributed Bragg Reflector (DBR) has an optical electric field that is produced by resonant light, the optical electric field having a number of nulls and a number of peaks, wherein the interface between the third mirror layer and the first mirror layer is located at or near a peak in the optical electric field.

21. A Distributed Bragg Reflector (DBR) according to claim 1 wherein the first mirror layer is substantially comprised of GaAs.

22. A Distributed Bragg Reflector (DBR) according to claim 1 wherein an aluminum (Al) concentration in the first mirror layer is about zero.

23. A Distributed Bragg Reflector (DBR) according to claim 1 wherein the second mirror layer substantially comprises AlAs.

24. A Distributed Bragg Reflector (DBR) according to claim 13 wherein the third mirror layer substantially comprises AlAs.

25. A Distributed Bragg Reflector (DBR) according to claim 13 wherein the third mirror layer includes a plurality of step changes in aluminum (Al) concentration.

18. A Distributed Bragg Reflector (DBR) comprising:

a graded interface having a graded aluminum concentration that changes from a first higher aluminum concentration to a first lower aluminum concentration, and further having a doping concentration;

a stepped interface having a stepped aluminum concentration from a second lower aluminum concentration to a second higher aluminum concentration, and further having a stepped doping concentration from a lower doping concentration to a higher doping concentration that coincides substantially with the stepped aluminum concentration from a second lower aluminum concentration to a second higher aluminum concentration, wherein the stepped aluminum concentration and the stepped doping concentration both occur entirely within a common layer of the DBR, the common layer being adjacent to another DBR layer whose aluminum concentration is about zero, and wherein the higher doping concentration is at least five times that of the doping concentration of the graded interface and is at or above 1E19 atoms/cm³; and

the Distributed Bragg Reflector (DBR) having an optical electric field that is produced by resonant light, the optical electric field having a number of nulls and a number of peaks, wherein the graded interface is positioned at or near a peak in the optical electric field and the stepped interface is positioned at or near a null in the optical electric field.

19. A Distributed Bragg Reflector (DBR) according to claim 18 wherein the higher doping concentration is at least ten times that of the doping concentration of the graded interface.

20. A Distributed Bragg Reflector (DBR) according to claim 19 wherein the higher doping concentration is at least fifteen times that of the doping concentration of the graded interface.

26. A Distributed Bragg Reflector (DBR), comprising:

a first mirror layer having an aluminum concentration of about zero and having a substantially uniform doping concentration;

a second mirror layer positioned adjacent to the first mirror layer and the second mirror layer having an aluminum concentration that is higher than an aluminum concentration in the first mirror layer, wherein a transition from the aluminum concentration in the first mirror layer to the aluminum concentration in the second mirror layer includes an upward step change in aluminum concentration that takes place entirely within the second mirror layer;

the second mirror layer having therein an upward step change in doping concentration, relative to a doping concentration of the first mirror layer, the upward step change in doping concentration of the second mirror layer occurring at substantially the same DBR position as a DBR position at which the upward step change in aluminum concentration occurs; and

a third mirror layer positioned adjacent to the first mirror layer such that the first mirror layer is between the third mirror layer and the second mirror layer, the third mirror layer having an aluminum concentration that is higher than the aluminum concentration in the first mirror layer, wherein the transition from the aluminum concentration in the first mirror layer to the aluminum concentration in the third mirror layer includes a grade, and the third mirror layer having a doping concentration that is below the doping concentration in the second mirror layer.

27. A Distributed Bragg Reflector according to claim 26 wherein the DBR comprises an Al_xGa_(1-x)As DBR.

28. A Distributed Bragg Reflector according to claim 26 wherein:

the first layer substantially comprises GaAs; and

the second and third layers each substantially comprise AlAs.

29. A Distributed Bragg Reflector according to claim 26 wherein the transition from the aluminum concentration in the first mirror layer to the aluminum concentration in the second mirror layer includes one or more additional upward step changes in aluminum concentration.

30. A Distributed Bragg Reflector according to claim 26 wherein a doping concentration in the first layer is substantially the same as a doping concentration in the third layer.

31. A Distributed Bragg Reflector according to claim 26 wherein the doping concentration of the second mirror layer is stepped up from a doping concentration of the first layer in a single step.