Methods of manufacturing interferometric modulators with thin film transistors
First Claim
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1. A method of manufacturing an interferometric modulator with film semiconductor circuit components, the method comprising:
- depositing a material layer over a transparent substrate; and
patterning and etching the material layer to form a portion of at least one interferometric modulator element and a portion of at least one film semiconductor circuit component.
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Abstract
A modulator has a transparent substrate with a first surface. At least one interferometric modulator element resides on the first surface. At least one thin film circuit component electrically connected to the element resides on the surface. When more than one interferometric element resides on the first surface, there is at least one thin film circuit component corresponding to each element residing on the first surface. A method of manufacturing interferometric modulators with thin film transistors is also disclosed.
29 Citations
9 Claims
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1. A method of manufacturing an interferometric modulator with film semiconductor circuit components, the method comprising:
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depositing a material layer over a transparent substrate; and patterning and etching the material layer to form a portion of at least one interferometric modulator element and a portion of at least one film semiconductor circuit component. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification