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Methods of manufacturing interferometric modulators with thin film transistors

  • US 7,601,571 B2
  • Filed: 08/10/2007
  • Issued: 10/13/2009
  • Est. Priority Date: 07/02/2004
  • Status: Active Grant
First Claim
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1. A method of manufacturing an interferometric modulator with film semiconductor circuit components, the method comprising:

  • depositing a material layer over a transparent substrate; and

    patterning and etching the material layer to form a portion of at least one interferometric modulator element and a portion of at least one film semiconductor circuit component.

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