Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects
First Claim
1. A method of fabrication of an interconnect opening for a semiconductor device;
- comprising the steps of;
forming a lower interconnect and an insulating layer over a semiconductor structure;
forming a first hardmask over said lower interconnect and said insulating layer;
forming a dielectric layer over said first hardmask layer;
forming a second hardmask over said dielectric layer;
in a first etch step, etching a first interconnect opening in said first hardmask, said dielectric layer and said second hardmask layer;
the dielectric layer in said first interconnect opening has sidewalls;
the first hardmask has an first hardmask overhang and the second hardmask has a second hardmask overhang where said first hardmask overhang and said second hardmask overhang extend out past the sidewall of the dielectric layer;
in a second etch step, etching the first and second hardmask overhangs and the dielectric layer form a first overhang-less interconnect opening;
the second etch step essentially removes said first and second hardmask overhangs;
forming an interconnect in said first overhang-less interconnect opening.
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Abstract
An embodiment of the invention shows a process to form a damascene opening preferably without hardmask overhang or dielectric layer undercut/void. The low-k dielectric material can be sandwiched in two hardmask films to form the dielectric film through which an interconnect opening is etched. A first example embodiment comprises the following. We form a lower interconnect and an insulating layer over a semiconductor structure. We form a first hardmask a dielectric layer, and a second hardmask layer, over the lower interconnect and insulating layer. We etch a first interconnect opening in the first hardmask, the dielectric layer and the second hardmask layer. Lastly, we form an interconnect in the first interconnect opening.
22 Citations
28 Claims
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1. A method of fabrication of an interconnect opening for a semiconductor device;
- comprising the steps of;
forming a lower interconnect and an insulating layer over a semiconductor structure; forming a first hardmask over said lower interconnect and said insulating layer; forming a dielectric layer over said first hardmask layer; forming a second hardmask over said dielectric layer; in a first etch step, etching a first interconnect opening in said first hardmask, said dielectric layer and said second hardmask layer; the dielectric layer in said first interconnect opening has sidewalls;
the first hardmask has an first hardmask overhang and the second hardmask has a second hardmask overhang where said first hardmask overhang and said second hardmask overhang extend out past the sidewall of the dielectric layer;in a second etch step, etching the first and second hardmask overhangs and the dielectric layer form a first overhang-less interconnect opening;
the second etch step essentially removes said first and second hardmask overhangs;forming an interconnect in said first overhang-less interconnect opening. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
- comprising the steps of;
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13. A method of fabrication of an interconnect opening for a semiconductor device;
- comprising the steps of;
a) forming a lower interconnect and insulating layer over a semiconductor structure; b) forming a first hardmask over said lower interconnect and insulating layer; (1) said first hardmask is comprised of a material selected from the group consisting of;
oxide, doped oxide or low-temperature oxide;c) forming a dielectric layer over said first hardmask layer; (1) said dielectric layer is comprised of a material selected from the group consisting of;
SiCOH, carbon containing low K dielectric, spin on low-k dielectrics, porous silica glass, organo silica glass, aromatic hydrocarbon materials, and CVD ultra low-k dielectric;d) forming a second hardmask over said dielectric layer; (1) said second hardmask is comprised of a material selected from the group consisting of;
oxide, doped oxide or low-temperature oxide;e) in a first etch step, etching a first interconnect opening in said first hardmask, dielectric layer and said second hardmask layer;
the first hardmask has an first hardmask overhang and the second hardmask has a second hardmask overhang where the first and second hardmask overhangs extend out past the sidewall of the dielectric layer;
the first etch forms a damaged dielectric layer from the dielectric layer lining the first interconnect opening;(1) the first etch step comprises;
using a carbon-fluorine chemistry;
the first etch step has an etch selectivity between 1;
1 to 2;
1 of the dielectric layer to said first hardmask and said second hardmask;f) in a second etch step, etching damaged dielectric layer and the overhangs of the hardmask layers to remove said first and second hardmask overhangs and form a first overhang-less interconnect opening and cleaning said first overhand-less interconnect opening; (1) the second etch comprises an etch with an etch selectivity between the damaged dielectric layer and the hardmask between 1;
1 and 2;
1;g) forming an interconnect in said first overhang-less interconnect opening. - View Dependent Claims (14, 15, 16, 17, 18)
- comprising the steps of;
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19. A method of forming a semiconductor device comprising:
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providing a substrate prepared with a dielectric stack, the dielectric stack comprising a dielectric layer formed in between first and second dielectric hardmask layers; and performing a first etch to form an opening through the first and second hardmask layers and the dielectric layer to expose sidewalls of the hardmask layers and dielectric layer, wherein sidewalls of the first and second hardmask layers extend beyond sidewalls of the dielectric layer to form first and second overhang regions by the first and second hardmask layers. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26)
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27. A method of forming a semiconductor device comprising:
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providing a substrate prepared with a dielectric stack, the dielectric stack comprising a dielectric layer formed in between first and second dielectric hardmask layers; performing a first etch to form an interconnect line opening through the first and second hardmask layers and the dielectric layer to expose sidewalls of the hardmask layers and dielectric layer, wherein sidewalls of the dielectric layer are non-coplanar with sidewalls of the first and second hardmask layers in the interconnect line opening; performing a second etch, wherein the second etch produces sidewalls of the first and second hardmask layers which are coplanar with sidewalls of the dielectric layer; and forming an interconnect line in the interconnect line opening. - View Dependent Claims (28)
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Specification