Film bulk acoustic resonator package and method of fabricating same

• US 7,615,833 B2
• Filed: 07/13/2004
• Issued: 11/10/2009
• Est. Priority Date: 07/13/2004
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies Wireless IP Singapore Pte Limited (Broadcom, Inc.)
• Inventors: Verhoeven, Tracy, Larson, John D. III, Matta, Farid, Bai, Qing
• Primary Examiner(s): MALSAWMA, LALRINFAMKIM HMAR
• Application Number:
  US10/890,343
• Publication Number:
  US 20060012021A1
• Time in Patent Office: 1,946 Days
• Field of Search: 257/416, 257/E29.324, 257/E21.613, 438/52
• US Class Current: 257/416
• CPC Class Codes: H03B 5/326 the resonator being an acoustic wave device, e.g. SAW or BAW device
• CPC Class Codes: H03H 3/02 for the manufacture of piezoelectric or electrostrictive resonators or networks H03H3/08 takes precedence
• CPC Class Codes: H03H 9/0547 consisting of a vertical arrangement H03H9/0566 takes precedence
• CPC Class Codes: H03H 9/105 the enclosure being defined by a cover cap mounted on an element forming part of the BAW device
• CPC Class Codes: H03H 9/706 Duplexers

Abstract

A microfabricated device has a first substrate, a second substrate, a film bulk acoustic resonator (FBAR) device, and a circuit. The second substrate is bonded to the first substrate to define a chamber. The FBAR device is located on a surface of the first substrate and inside the chamber. The circuit is located on a surface of the second substrate and inside the chamber. An electrical connection connects the circuit and the FBAR device.

Claims

1. A microfabricated device, comprising:

a first substrate;

a second substrate bonded to said first substrate to define a chamber;

a film bulk acoustic resonator (FBAR) device located on a surface of said first substrate inside said chamber;

an active circuit located on a surface of said second substrate inside said chamber; and

an electrical connection between said active circuit and said FBAR device, said electrical connection being configured to connect a signal between said FBAR device and said active circuit, and said active circuit being configured to process said signal.

2. The device of claim 1, further comprising a hermetic gasket between said first and second substrates, said gasket defining part of said chamber.

3. The device of claim 1, wherein:

said circuit is configured to process a signal, and said electrical connection connects said signal from said active circuit to said FBAR device.

4. The device of claim 1, wherein said device constitutes part of a cellular telephone, said cellular telephone comprising an antenna electrically connected to said FBAR device.

5. The device of claim 4, wherein said active circuit comprises a power amplifier.

6. The device of claim 1, further comprising:

an electrically conductive via extending through said first substrate; and

an electrical connection between said via and said FBAR device.

7. The device of claim 6, further comprising:

an electrically conductive via extending through said second substrate; and

an electrical connection between said active circuit and said via extending through said second substrate.

8. The device of claim 1, wherein said second substrate has a thickness of less than approximately 150 micrometers.

9. The device of claim 1, wherein said first and second substrates comprise silicon.

10. The device of claim 1, wherein said second substrate comprises gallium arsenide.

11. The device of claim 10, wherein said first substrate comprises alumina.

12. The device of claim 1, wherein said FBAR device comprises a tunable FBAR circuit, said circuit comprising a voltage-variable capacitor electrically connected to an FBAR.

13. The device of claim 1, wherein said electrical connection hermetically seals said chamber.

14. The device of claim 1, wherein said electrical connection comprises compliant material that is coated with electrically conductive material.

15. The device of claim 14, wherein said compliant material comprises a polymer.

16. The device of claim 14, wherein said compliant material comprises a polyimide.

17. A microfabricated device, comprising:

a first substrate;

a second substrate bonded to said first substrate to define a chamber;

a film bulk acoustic resonator (FBAR) device located on a surface of said first substrate inside said chamber, said FBAR device comprising a tunable FBAR circuit, said tunable FBAR circuit comprising a voltage variable capacitor electrically connected to the FBAR;

an circuit located on a surface of said second substrate inside said chamber; and

an electrical connection between said circuit and said FBAR device, wherein said circuit located on said surface of said second substrate comprises an operational amplifier, and wherein said tunable FBAR circuit is positioned within a feedback path of said operational amplifier.

18. A microfabricated device, comprising:

a first substrate;

a second substrate bonded to the first substrate to define a chamber;

a film bulk acoustic resonator (FBAR) device located over a surface of the first substrate inside the chamber;

an active circuit located on a surface of the second substrate inside the chamber, the active circuit configured to process a signal from the FBAR device; and

an electrical connection between the active circuit and the FBAR device, wherein electrical connection hermetically seals the chamber.