Method of monitoring the manufacture of interferometric modulators

• US 7,618,831 B2
• Filed: 11/17/2005
• Issued: 11/17/2009
• Est. Priority Date: 09/27/2004
• Status: Expired due to Fees

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: IDC, LLC
• Inventors: Cummings, William, Gally, Brian
• Primary Examiner(s): Fulk; Steven J
• Application Number:
  US11/281,763
• Publication Number:
  US 20060077381A1
• Time in Patent Office: 1,461 Days
• Field of Search: 438/8, 438/16, 257/48, 257/E21.53, 359/578
• US Class Current: 438/8
• CPC Class Codes: B81B 2201/042 Micromirrors, not used as optical switches
• CPC Class Codes: B81C 99/004 during manufacturing
• CPC Class Codes: G01N 21/55 Specular reflectivity
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26

Abstract

Process control monitors are disclosed that are produced using at least some of the same process steps used to manufacture a MEMS device. Analysis of the process control monitors can provide information regarding properties of the MEMS device and components or sub-components in the device. This information can be used to identify errors in processing or to optimize the MEMS device. In some embodiments, analysis of the process control monitors may utilize optical measurements.

Claims

1. A method of monitoring the extent of etching of a first material positioned between and adjacent to two layers of other material during manufacturing of a micro-electro-mechanical system (MEMS), comprising:

manufacturing a process control monitor that comprises the two layers of other material and the first material disposed between and adjacent to the two layers;

manufacturing a plurality of structures at time of manufacturing the process control monitor, wherein the plurality of the structures comprise the two layers of the other material and the first material disposed between and adjacent to the two layers;

etching the first material in the process control monitor and in the plurality of structures; and

optically detecting the extent of etching of the first material in the process control monitor;

wherein the process control monitor is adapted so that the first material in the structures is substantially completely etched away before the first material in the process control monitor is substantially completely etched away.

2. The method of claim 1, wherein the optical detecting comprises detecting reflectance of light from a side of the process control monitor where the first material and the two layers of other material are deposited during manufacturing of the process control monitor.

3. The method of claim 1, wherein the optical detecting comprises detecting reflectance of light from a side of the process control monitor opposite the side where the first material and the two layers of other material are deposited during manufacturing of the process control monitor.

4. The method of claim 1, wherein the MEMS includes interferometric modulators and the first material is a sacrificial layer that determines positioning of a mechanical membrane relative to other layers in the interferometric modulators.

5. The method of claim 4, wherein the first material is molybdenum.

6. The method of claim 4, wherein the first material is silicon.

7. The method of claim 1, wherein one of the two layers comprises a plurality of holes through which the first material is etched and the holes are photolithographically created.

8. The method of claim 1, wherein substantially different reflectivity in the visible spectrum is detected where the first material has been etched away as compared to where the first material has not been etched away.

9. The method of claim 1, wherein the optical detecting includes visually observing the process control monitor.

10. The method of claim 1, wherein the optical detecting includes detecting light reflected from the process control monitor with a camera.

11. The method of claim 1, wherein the optical detecting comprises visually observing a distance from a hole, through which the first material in the process control monitor is etched, to where the first material in the process control monitor has been etched away.

12. The method of claim 1, wherein the optical detecting is performed while the first material is being etched.

13. The method of claim 1, wherein the optical detecting is performed after a portion of the first material has been etched away.

14. The method of claim 13, wherein the optical detecting is performed after removing the process control monitor from an etchant chamber.

15. The method of claim 1, wherein the manufacturing comprises forming a plurality of posts in the process control monitor that support the separation of the two layers of other material after removal of the first material.

16. The method of claim 15, wherein the posts are used as a vernier to determine said distance.

17. The method of claim 1, wherein the plurality of structures and the process control monitor are simultaneously manufactured on a same wafer, wherein the first material forms a sacrificial layer, and wherein the plurality of structures become interferometric modulators upon removal of the sacrificial layer.

18. The method of claim 17, wherein the manufacturing the plurality of the structures include one or more material deposition and removal steps which are the same as those for the manufacturing the process control monitor.

19. The method of claim 17, wherein a hole in the process control monitor formed by the manufacturing the process control monitor has a diameter substantially the same as a plurality of holes in the plurality of structures.

20. The method of claim 17, wherein a first distance between a hole in the process control monitor and edges of the process control monitor is greater than a second distance between a plurality of holes in the plurality of structures.

21. The method of claim 20, wherein the manufacturing the process control monitor forms multiple holes in the process control monitor, and wherein a third distance between the multiple holes in the process control monitor is greater than the second distance between the plurality of holes in the plurality of structures.

22. The method of claim 21, wherein the second distance and the third distance are such that an etchant can substantially completely remove the sacrificial layer in the interferometric modulators before the sacrificial layer is substantially completely removed in the process control monitor.

23. The method of claim 21, wherein the process control monitor is formed with a structure different from the plurality of structures by applying at least one different patterning step.

24. The method of claim 23, wherein the different patterning step comprises defining a pattern for the multiple holes in the process control monitor.

25. The method of claim 17, wherein the at least one layer above the sacrificial layer comprises a mechanical membrane that includes a mirror.

26. The method of claim 17, wherein the plurality of structures and the process control monitor are disposed on a substantially transparent substrate.