MEMS thermal actuator and method of manufacture
First Claim
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1. A micromechanical actuator, comprising:
- a silicon-on-insulator substrate having a device layer formed in a plane;
a metallic material inlaid in the plane of the device layer and configured to move substantially in the plane of the device layer;
a silicon member formed from the device layer of a silicon-on-insulator substrate, configured to move substantially in the plane of the device layer, wherein movement of the inlaid material drives movement of the silicon member.
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Abstract
A separated MEMS thermal actuator is disclosed which is largely insensitive to creep in the cantilevered beams of the thermal actuator. In the separated MEMS thermal actuator, a inlaid cantilevered drive beam formed in the same plane, but separated from a passive beam by a small gap. Because the inlaid cantilevered drive beam and the passive beam are not directly coupled, any changes in the quiescent position of the inlaid cantilevered drive beam may not be transmitted to the passive beam, if the magnitude of the changes are less than the size of the gap.
26 Citations
16 Claims
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1. A micromechanical actuator, comprising:
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a silicon-on-insulator substrate having a device layer formed in a plane; a metallic material inlaid in the plane of the device layer and configured to move substantially in the plane of the device layer; a silicon member formed from the device layer of a silicon-on-insulator substrate, configured to move substantially in the plane of the device layer, wherein movement of the inlaid material drives movement of the silicon member. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A micromechanical actuator, comprising:
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a silicon-on-insulator substrate having a device layer formed in a plane; a material inlaid in the plane of the device layer and configured to move substantially in the plane of the device layer; a silicon member formed from the device layer of a silicon-on-insulator substrate, configured to move substantially in the plane of the device layer, wherein movement of the inlaid material drives movement of the silicon member, wherein the silicon member is clad with a metal contact material.
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Specification