Mask data creation method

• US 7,625,678 B2
• Filed: 12/26/2007
• Issued: 12/01/2009
• Est. Priority Date: 06/24/2003
• Status: Expired due to Fees

• Current Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Misaka, Akio
• Primary Examiner(s): ROSASCO, STEPHEN D
• Application Number:
  US12/003,475
• Publication Number:
  US 20080123935A1
• Time in Patent Office: 706 Days
• Field of Search: 430/5, 716/19, 716/20, 716/21
• US Class Current: 430/5
• CPC Class Codes: G03F 1/26 Phase shift masks [PSM]; PSM blanks; Preparation thereof
• CPC Class Codes: G03F 1/32 Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 7/70283 Mask effects on the imaging process
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions

Abstract

The photomask of this invention includes, on a transparent substrate, a semi-shielding portion having a transmitting property against exposing light, a transparent portion having a transmitting property against the exposing light and surrounded with the semi-shielding portion, and an auxiliary pattern surrounded with the semi-shielding portion and provided around the transparent portion. The semi-shielding portion and the transparent portion transmit the exposing light in an identical phase with respect to each other. The auxiliary pattern transmits the exposing light in an opposite phase with respect to the semi-shielding portion and the transparent portion and is not transferred through exposure.

Claims

1. A mask data creation method for creating mask data for a photomask including a mask pattern formed on a transparent substrate and a transparent portion of said transparent substrate where said mask pattern is not formed, comprising the steps of:

(a) arranging a pattern corresponding to a desired exposed region of a resist formed by irradiating said resist with exposing light through said photomask;

(b) determining a distance between outline shifters forming a pair and sandwiching said pattern and a width of each of said outline shifters in accordance with said pattern;

(c) providing said transparent portion inside said outline shifters;

(d), after the step (c), setting said transparent portion as a CD adjustment pattern;

(e) providing a semi-shielding portion for transmitting the exposing light in an identical phase with respect to said transparent portion in such a manner that said transparent portion and said outline shifters are surrounded with said semi-shielding portion;

(f) setting said outline shifters as phase shifters that transmit the exposing light in an opposite phase with respect to said transparent portion;

(g) predicting, through simulation, a dimension of a resist pattern formed by using said mask pattern including said phase shifters and said semi-shielding portion; and

(h), when said predicted dimension of said resist pattern does not accord with a desired dimension, deforming said mask pattern by deforming said CD adjustment pattern.

2. The mask data creation method of claim 1,

wherein the step (b) includes a sub-step of changing said width of said outline shifters in accordance with said distance between said outline shifters.

3. The mask data creation method of claim 2,

wherein said phase shifters are provided around said transparent portion with part of said semi-shielding portion sandwiched therebetween.

4. The mask data creation method of claim 2,

wherein each of said phase shifters is disposed in parallel to each side of said transparent portion having a rectangular shape.

5. The mask data creation method of claim 4,

wherein said phase shifters consists of four rectangular patterns.

6. The mask data creation method of claim 2,

wherein the step (a) includes a sub-step of setting transmittances of said phase shifters and said semi-shielding portion.

7. The mask data creation method of claim 1,

wherein the step (b) includes a sub-step of changing said distance between said outline shifters in accordance with a close relationship between desired exposed regions.

8. The mask data creation method of claim 7,

wherein said phase shifters are provided around said transparent portion with part of said semi-shielding portion sandwiched therebetween.

9. The mask data creation method of claim 7,

wherein each of said phase shifters is disposed in parallel to each side of said transparent portion having a rectangular shape.

10. The mask data creation method of claim 9,

wherein said phase shifters consists of four rectangular patterns.

11. The mask data creation method of claim 7,

wherein the step (a) includes a sub-step of setting transmittances of said phase shifters and said semi-shielding portion.

12. The mask data creation method of claim 1,

wherein said phase shifters are provided around said transparent portion with part of said semi-shielding portion sandwiched therebetween.

13. The mask data creation method of claim 1,

wherein each of said phase shifters is disposed in parallel to each side of said transparent portion having a rectangular shape.

14. The mask data creation method of claim 13,

wherein said phase shifters consists of four rectangular patterns.

15. The mask data creation method of claim 1,

wherein the step (a) includes a sub-step of setting transmittances of said phase shifters and said semi-shielding portion.