Apparatus and method for controlling ion beam

• US 7,629,589 B2
• Filed: 02/07/2007
• Issued: 12/08/2009
• Est. Priority Date: 02/07/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Original Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Inventors: Lee, Do-Haing, Sun, Jong-Woo, Shin, Chul-Ho, Hwang, Sung-Wook
• Primary Examiner(s): Berman; Jack I
• Assistant Examiner(s): IPPOLITO RAUSCH, NICOLE
• Application Number:
  US11/703,130
• Publication Number:
  US 20070181820A1
• Time in Patent Office: 1,035 Days
• Field of Search: 250/396.R, 250/504.R, 250/492.1, 250/492.2, 250/492.21, 250/492.22, 250/492.23, 250/492.3, 250/493.1, 250/423.R, 250/424, 250/423.P, 250/423.F, 250/396.ML, 204/164, 315/11.91, 315/111.41, 315/111.31, 315/7, 315/368.16, 315/37, 315/39.63, 315/43, 315/89, 315/111.21, 315/111.611, 313/359.1, 313/363.1, 313/360.1, 313/361.1
• US Class Current: 250/396.00R
• CPC Class Codes: H01J 2237/061 Construction
• CPC Class Codes: H01J 2237/3151 Etching
• CPC Class Codes: H01J 2237/31701 Ion implantation
• CPC Class Codes: H01J 27/024 Extraction optics, e.g. grids
• CPC Class Codes: H01J 37/08 Ion sources; Ion guns

Abstract

An apparatus and/or method for controlling an ion beam may be provided, and/or a method for preparing an extraction electrode for the same may be provided. In the apparatus, a plurality of extraction electrodes may be disposed in a path of an ion beam. At least one extraction electrode may include a plurality of sub-grids.

Claims

1. An apparatus for controlling an ion beam, comprising:

a plurality of extraction electrodes disposed in a path of an ion beam, the plurality of extraction electrodes accelerating ions,

wherein at least one extraction electrode, being most adjacent to an ion source among the plurality of extraction electrodes, includes a plurality of sub-electrodes.

2. The apparatus of claim 1, wherein the remainder of the plurality of extraction electrodes are extraction electrodes including a plurality of sub-electrodes.

3. The apparatus of claim 1, wherein the remainder of the plurality of extraction electrodes are extraction electrodes without a plurality of sub-electrodes.

4. The apparatus of claim 1, wherein some of the remainder of the plurality of extraction electrodes include a plurality of sub-electrodes and some of the remainder of the plurality of extraction electrodes do not include a plurality of sub-electrodes.

5. The apparatus of claim 1, wherein potentials are applied to the plurality of sub-electrodes to control the ion beam.

6. The apparatus of claim 1, further comprising:

an ion source for generating the ion beam,

wherein the plurality of extraction electrodes includes a plurality of extraction holes through which the ion beam passes.

7. The apparatus of claim 1, wherein the plurality of sub-electrodes include

a first sub-electrode in the at least one extraction electrode;

and

a second sub-electrode outside the first sub-electrode and having a potential difference with respect to the first sub-electrode.

8. The apparatus of claim 7, further comprising:

an insulating material between the first sub-electrode and the second sub-electrode.

9. The apparatus of claim 7, wherein the first sub-electrode is a circular plate at the center of the at least one extraction electrode, and the second sub-electrode is a plate having an inside diameter equal to or greater than an external diameter of the first sub-electrode.

10. The apparatus of claim 1, wherein a ground potential is applied to a final extraction electrode spaced farthest from the ion source among the plurality of extraction electrodes.

11. The apparatus of claim 1, wherein the plurality of sub-electrodes have a configuration reflecting an actual ion beam distribution.

12. An apparatus for controlling an ion beam, comprising:

a plurality of extraction electrodes disposed in a path of an ion beam, the plurality of extraction electrodes accelerating ions,

wherein at least one extraction electrode, being spaced from a first extraction electrode most adjacent to an ion source and being located between the first extraction electrode and a final extraction electrode, includes a plurality of sub-electrodes.

13. The apparatus of claim 12, wherein the at least one extraction electrode has a different potential from the first extraction electrode.

14. The apparatus of claim 13, wherein a positive potential is applied to the first extraction electrode and a negative potential is applied to the at least one extraction electrode.

15. A method for controlling an ion beam, the method comprising:

applying a potential to a plurality of extraction electrodes disposed in a path of an ion beam, the plurality of extraction electrodes accelerating ions, wherein at least one extraction electrode, being most adjacent to an ion source among the plurality of extraction electrodes, includes a plurality of sub-electrodes.

16. The method of claim 15, wherein the remainder of the plurality of extraction electrodes are extraction electrodes including a plurality of sub-electrodes.

17. The method of claim 15, wherein the remainder of the plurality of extraction electrodes are extraction electrodes without a plurality of sub-electrodes.

18. The method of claim 15, wherein some of the remainder of the plurality of extraction electrodes include a plurality of sub-electrodes and some of the remainder of the plurality of extraction electrodes do not include a plurality of sub-electrodes.

19. The method of claim 15, further comprising:

independently controlling potentials of the plurality of sub-electrodes.

20. The method of claim 19, wherein the potentials of the plurality of sub-electrodes are independently controlled to control a flux, or an irradiation angle of the ion beam.

21. The method of claim 15, wherein the plurality of sub-electrodes are electrically insulated from one another.

22. The method of claim 15, wherein a ground potential is applied to a final extraction electrode spaced farthest from the ion source among the plurality of extraction electrodes.

23. The method of claim 15, wherein the plurality of sub-electrodes have a configuration reflecting an actual ion beam distribution.

24. A method for controlling an ion beam, the method comprising:

applying a potential to a plurality of extraction electrodes disposed in a path of an ion beam, the plurality of extraction electrodes accelerating ions,

wherein at least one extraction electrode, being spaced from a first extraction electrode most adjacent to an Ion source and being located between the first extraction electrode and a final extraction electrode, includes a plurality of sub-electrodes.

25. The method of claim 24, wherein a positive potential is applied to the first extraction electrode and a negative potential is applied to the at least one extraction electrode.

26. A method for preparing an extraction electrode, the method comprising:

measuring a distribution of an ion beam; and

forming at least one extraction electrode, of a plurality of extraction electrodes, having a plurality of sub-electrodes having a configuration reflecting the distribution of the ion beam,

wherein the plurality of extraction electrodes accelerate ions.

27. The method of claim 26, wherein measuring the distribution of the ion beam measures a two-dimensional distribution of the ion beam on a semiconductor substrate, and

wherein forming the at least one extraction electrode further includes

dividing the semiconductor substrate into a plurality of regions having a two-dimensional configuration reflecting the two-dimensional distribution of the ion beam, and

forming the plurality of sub-electrodes to correspond to the plurality of regions.

28. The method of claim 26, wherein forming the at least one extraction electrode further includes

interposing insulating material between the plurality of sub-electrodes.

29. The method of claim 26, wherein measuring the distribution of the ion beam measures energy, a flux, or an irradiation angle of the ion beam.

30. The method of claim 26, wherein the number of sub-electrodes is a function of a degree of uniformity of the distribution of the ion beam.