Method for forming nitride crystals
DCFirst Claim
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1. A method for growing a nitride crystal which comprises:
- providing source material containing less than 1 weight percent oxygen;
providing a mineralizer;
providing one or more seed crystals, wherein the seed crystal is larger than 1 mm in diameter;
providing a capsule;
filling the capsule with a nitrogen-containing solvent;
processing the capsule and contents in a supercritical fluid at a temperature higher than about 550°
C. and a pressure higher than about 2 kbar.
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Abstract
A method for growing a nitride crystal and a crystalline composition selected from one of AlN, InGaN, AlGaInN, InGaN, and AlGaNInN is provided. The composition comprises a true single crystal, grown from a single nucleus, at least 1 mm in diameter, free of lateral strain and tilt boundaries, with a dislocation density less than about 104 cm−2.
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13 Claims
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1. A method for growing a nitride crystal which comprises:
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providing source material containing less than 1 weight percent oxygen; providing a mineralizer; providing one or more seed crystals, wherein the seed crystal is larger than 1 mm in diameter; providing a capsule; filling the capsule with a nitrogen-containing solvent; processing the capsule and contents in a supercritical fluid at a temperature higher than about 550°
C. and a pressure higher than about 2 kbar. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification