Electro-optical display device having thin film transistors including a gate insulating film containing fluorine

• US 7,646,441 B2
• Filed: 09/24/2001
• Issued: 01/12/2010
• Est. Priority Date: 02/16/1991
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hiroki, Masaaki, Mase, Akira
• Primary Examiner(s): QI, ZHI QIANG
• Application Number:
  US09/961,055
• Publication Number:
  US 20020033906A1
• Time in Patent Office: 3,032 Days
• Field of Search: 349/106, 349/110, 349/122, 349/138, 349/43, 349/158
• US Class Current: 349/43
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136245 having complementary transistors
• CPC Class Codes: G09G 2300/0823 used to establish symmetry in driving, e.g. with polarity inversion
• CPC Class Codes: G09G 2310/027 Details of drivers for data electrodes, the drivers handling digital grey scale data, e.g. use of D/A converters
• CPC Class Codes: G09G 3/2018 by time modulation using two or more time intervals
• CPC Class Codes: G09G 3/3648 using an active matrix G09G3/367 - G09G3/3696 take precedence
• CPC Class Codes: G09G 3/3651 using multistable liquid crystals, e.g. ferroelectric liquid crystals
• CPC Class Codes: G09G 3/3659 the addressing of the pixel involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependant on signal of two data electrodes
• CPC Class Codes: G09G 3/3688 suitable for active matrices only
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H04N 3/127 using liquid crystals

Abstract

An electro-optical display device comprising a first substrate having an insulating surface, at least one thin film transistor formed over the first substrate, the thin film transistor comprising a channel region, source and drain regions with the channel region extending in between, a gate insulating film adjacent to the channel region, and a gate electrode adjacent to the gate insulating film, a pixel electrode formed over a leveling film or over an interlayer insulating film and electrically connected to one of the source and drain regions of the thin film transistor, and color filters or black stripes comprising a resin formed over a second substrate. A leveling film may be formed over the at least one thin film transistor, the color filters or the black stripes. The device may comprise a second leveling film or a common electrode.

Claims

1. An electro-optical display device comprising:

a first substrate having an insulating surface;

at least one thin film transistor formed over said first substrate, said thin film transistor comprising a semiconductor film including a channel forming region, and source and drain regions with said channel forming region extending therebetween, a gate insulating film covering the semiconductor film, and a gate electrode over said gate insulating film, wherein said gate insulating film has a first contact hole;

an interlayer insulating film formed over said thin film transistor, wherein said interlayer insulating film has a second contact hole and is in contact with said gate electrode;

an electrode formed over said interlayer insulating film and electrically connected to one of said source and drain regions through said first contact hole and said second contact hole, wherein said electrode is in contact with said one of said source and drain regions in said first contact hole;

a leveling film comprising an organic resin formed over said electrode, wherein said leveling film has a third contact hole; and

a pixel electrode formed over said leveling film and electrically connected to said electrode through said third contact hole,

wherein said gate insulating film contains fluorine and is in contact with a top surface and side surfaces of the semiconductor film,

wherein said third contact hole is located apart from said first contact hole and said second contact hole, and

wherein said pixel electrode is transparent.

9. The electro-optical display device according to any one of claims 1, 2 and 3, further comprising a liquid crystal and a second substrate wherein said liquid crystal is disposed between said first substrate and said second substrate.

10. The electro-optical device according to any one of claims 1 and 2, wherein said leveling film comprises polyimide.

11. The electro-optical display device according to any one of claims 1, 2, 3 and 7, wherein said electro-optical display device is a liquid crystal display device.

12. The electro-optical display device according to any one of claims 1, 2, 3 and 7, wherein said gate electrode does not overlap said pixel electrode.

15. The electro-optical device according to any one of claim 1, 2, 3 and 7, wherein said channel forming region comprises crystalline silicon.

16. The electro-optical device according to any one of claim 1, 2, 3 and 7, wherein said gate insulating film is a silicon oxide film.

2. An electro-optical display device comprising:

a first substrate having an insulating surface;

at least one thin film transistor formed over said first substrate, said thin film transistor comprising a semiconductor film including a channel forming region, and source and drain regions with said channel forming region extending therebetween, a gate insulating film covering the semiconductor film, and a gate electrode over said gate insulating film, wherein said gate insulating film has a first contact hole;

an interlayer insulating film formed over said thin film transistor, wherein said interlayer insulating film has a second contact hole and is in contact with said gate electrode;

an electrode formed over said interlayer insulating film and electrically connected to one of said source and drain regions through said first contact hole and said second contact hole, wherein said electrode is in contact with said one of said source and drain regions in said first contact hole;

a leveling film comprising an organic resin formed over said electrode, wherein said leveling film has a third contact hole; and

a pixel electrode formed over said leveling film and electrically connected to said electrode through said third contact hole,

wherein said gate insulating film contains fluorine and is in contact with a top surface and side surfaces of the semiconductor film,

wherein said third contact hole does not overlap said first contact hole and said second contact hole, and

wherein said pixel electrode is transparent.

3. An electro-optical display device comprising:

a first substrate having an insulating surface;

a blocking layer formed over said first substrate;

at least one thin film transistor formed over said blocking layer, said thin film transistor comprising a semiconductor film including a channel forming region, and source and drain regions with said channel forming region extending therebetween, a gate insulating film covering the semiconductor film, and a gate electrode over said gate insulating film, wherein said gate insulating film has a first contact hole;

an interlayer insulating film formed over said thin film transistor, wherein said interlayer insulating film has a second contact hole and is in contact with said gate electrode;

an electrode formed over said interlayer insulating film and electrically connected to one of said source and drain regions through said first contact hole and said second contact hole, wherein said electrode is in contact with said one of said source and drain regions in said first contact hole;

an organic resin film formed over said electrode, wherein said organic resin film has a third contact hole; and

a pixel electrode formed over said organic resin film and electrically connected to said electrode through said third contact hole, wherein said pixel electrode contacts said electrode in said third contact hole;

wherein said gate insulating film contains fluorine and is in contact with a top surface and side surfaces of the semiconductor film,

wherein said third contact hole does not overlap said first contact hole and said second contact hole,

wherein said semiconductor film is surrounded by said blocking layer and said gate insulating film, and

wherein said pixel electrode is transparent.

13. The electro-optical display device according to any one of claims 3 and 7, wherein said blocking layer is a silicon oxide film.

14. The electro-optical device according to any one of claim 3 and 7, wherein said organic resin film comprises polyimide.

4. A camera having an active matrix type display device, said active matrix type display device comprising:

a first substrate having an insulating surface;

at least one thin film transistor formed over said first substrate, said thin film transistor comprising a semiconductor film including a channel forming region, and source and drain regions with said channel forming region extending therebetween, a gate insulating film covering the semiconductor film, and a gate electrode over said gate insulating film, wherein said gate insulating film has a first contact hole;

an interlayer insulating film formed over said thin film transistor, wherein said interlayer insulating film has a second contact hole and is in contact with said gate electrode;

an electrode formed over said interlayer insulating film and electrically connected to one of said source and drain regions through said first contact hole and said second contact hole, wherein said electrode is in contact with said one of said source and drain regions in said first contact hole;

a leveling film comprising an organic resin formed over said electrode, wherein said leveling film has a third contact hole; and

a pixel electrode formed over said leveling film and electrically connected to said electrode through said third contact hole,

wherein said gate insulating film contains fluorine and is in contact with a top surface and side surfaces of the semiconductor film,

wherein said third contact hole is located apart from said first contact hole and said second contact hole, and

wherein said pixel electrode is transparent.

17. The camera according to any one of claims 4, 5 and 6 further comprising a liquid crystal and a second substrate wherein said liquid crystal is disposed between said first substrate and said second substrate.

18. The camera according to any one of claims 4 and 5 wherein said leveling film comprises polyimide.

19. The camera according to any one of claims 4, 5 and 6 wherein said channel forming region comprises crystalline silicon.

20. The camera according to any one of claims 4, 5 and 6 wherein said gate insulating film is a silicon oxide film.

21. The camera according to any one of claims 4, 5, 6 and 8, wherein said gate electrode does not overlap said pixel electrode.

5. A camera having an active matrix type display device, said active matrix type display device comprising:

a first substrate having an insulating surface;

at least one thin film transistor formed over said first substrate, said thin film transistor comprising a semiconductor film including a channel forming region, and source and drain regions with said channel forming region extending therebetween, a gate insulating film covering the semiconductor film, and a gate electrode over said gate insulating film, wherein said gate insulating film has a first contact hole;

an interlayer insulating film formed over said thin film transistor, wherein said interlayer insulating film has a second contact hole and is in contact with said gate electrode;

an electrode formed over said interlayer insulating film and electrically connected to one of said source and drain regions through said first contact hole and said second contact hole, wherein said electrode is in contact with said one of said source and drain regions in said first contact hole;

a leveling film comprising an organic resin formed over said electrode, wherein said leveling film has a third contact hole; and

a pixel electrode formed over said leveling film and electrically connected to said electrode through said third contact hole,

wherein said gate insulating film contains fluorine and is in contact with a top surface and side surfaces of the semiconductor film,

wherein said third contact hole does not overlap said first contact hole and said second contact hole, and

wherein said pixel electrode is transparent.

6. A camera having an active matrix type display device, said active matrix type display device comprising:

a first substrate having an insulating surface;

a blocking layer formed over said first substrate;

at least one thin film transistor formed over said blocking layer, said thin film transistor comprising a semiconductor film including a channel forming region, and source and drain regions with said channel forming region extending therebetween, a gate insulating film covering the semiconductor film, and a gate electrode over said gate insulating film, wherein said gate insulating film has a first contact hole;

an interlayer insulating film formed over said thin film transistor, wherein said interlayer insulating film has a second contact hole and is in contact with said gate electrode;

an electrode formed on said interlayer insulating film and electrically connected to one of said source and drain regions through said first contact hole and said second contact hole, wherein said electrode is in contact with said one of said source and drain regions in said first contact hole;

an organic resin film formed over said electrode, wherein said organic resin film has a third contact hole; and

a pixel electrode formed over said organic resin film and electrically connected to said electrode through said third contact hole, wherein said pixel electrode contacts said electrode in said third contact hole;

wherein said gate insulating film contains fluorine and is in contact with a top surface and side surfaces of the semiconductor film,

wherein said third contact hole does not overlap said first contact hole and said second contact hole,

wherein said semiconductor film is surrounded by said blocking layer and said gate insulating film, and

wherein said pixel electrode is transparent.

22. The camera according to any one of claims 6 and 8, wherein said blocking layer is a silicon oxide film.

25. The camera according to any one of claim 6 and 8, wherein said organic resin film comprises polyimide.

7. An electro-optical display device comprising:

a first substrate having an insulating surface;

a blocking layer formed over said first substrate;

at least one thin film transistor formed over said blocking layer, said thin film transistor comprising a semiconductor film including a channel forming region, and source and drain regions with said channel forming region extending therebetween, a gate insulating film covering the semiconductor film, and a gate electrode over said gate insulating film, wherein said gate insulating film has a first contact hole;

an interlayer insulating film formed over said thin film transistor, wherein said interlayer insulating film has a second contact hole and is in contact with said gate electrode;

an electrode formed over said interlayer insulating film and electrically connected to one of said source and drain regions through said first contact hole and said second contact hole, wherein said electrode is in contact with said one of said source and drain regions in said first contact hole;

an organic resin film formed over said electrode, wherein said organic resin film has a third contact hole; and

a pixel electrode formed over said organic resin film and electrically connected to said electrode through said third contact hole, wherein said pixel electrode contacts said electrode in said third contact hole;

wherein said gate insulating film contains fluorine and is in contact with a top surface and side surfaces of the semiconductor film,

wherein said third contact hole is located apart from said first contact hole and said second contact hole,

wherein said semiconductor film is surrounded by said blocking layer and said gate insulating film, and

wherein said pixel electrode is transparent.

23. The electro-optical display device according to claim 7, further comprising a liquid crystal and a second substrate wherein said liquid crystal is disposed between said first substrate and said second substrate.

8. A camera having an active matrix type display device, said active matrix type display device comprising:

a first substrate having an insulating surface;

a blocking layer formed over said first substrate;

at least one thin film transistor formed over said blocking layer, said thin film transistor comprising a semiconductor film including a channel forming region, and source and drain regions with said channel forming region extending therebetween, a gate insulating film covering the semiconductor film, and a gate electrode over said gate insulating film, wherein said gate insulating film has a first contact hole;

an interlayer insulating film formed over said thin film transistor, wherein said interlayer insulating film has a second contact hole and is in contact with said gate electrode;

an electrode formed over said interlayer insulating film and electrically connected to one of said source and drain regions through said first contact hole and said second contact hole, wherein said electrode is in contact with said one of said source and drain regions in said first contact hole;

an organic resin film formed over said electrode, wherein said organic resin film has a third contact hole; and

a pixel electrode formed over said organic resin film and electrically connected to said electrode through said third contact hole, wherein said pixel electrode contacts said electrode in said third contact hole;

wherein said gate insulating film contains fluorine and is in contact with a top surface and side surfaces of the semiconductor film,

wherein said third contact hole is located apart from said first contact hole and said second contact hole,

wherein said semiconductor film is surrounded by said blocking layer and said gate insulating film, and

wherein said pixel electrode is transparent.

24. The camera according to claim 8, further comprising a liquid crystal and a second substrate wherein said liquid crystal is disposed between said first substrate and said second substrate.

26. The camera according to claim 8, wherein said channel forming region comprises crystalline silicon.

27. The camera according to claim 8, wherein said gate insulating film is a silicon oxide film.