Semiconductor device and method for manufacturing the same

• US 7,655,956 B2
• Filed: 12/26/2006
• Issued: 02/02/2010
• Est. Priority Date: 12/27/2005
• Status: Expired due to Fees

• Current Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Original Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Inventors: Shiraishi, Akinori, Sunohara, Masahiro, Murayama, Kei, Koizumi, Naoyuki, Higashi, Mitsutoshi, Taguchi, Yuichi, Sakaguchi, Hideaki
• Primary Examiner(s): Toledo; Fernando L
• Assistant Examiner(s): DIALLO, MAMADOU L
• Application Number:
  US11/644,933
• Publication Number:
  US 20070145400A1
• Time in Patent Office: 1,134 Days
• Field of Search: 438/26, 438/28, 438/119, 257/98, 257/8, 257/99, 257/100, 362/328
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 33/483 Containers
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

There is provided a semiconductor device mounted with a light emitting element, which can be downsized easily, improve light emitting efficiency and be formed easily, and a method for manufacturing the semiconductor device effectively. The semiconductor device includes a substrate, a light emitting element mounted on the substrate by flip chip bonding, a sealing structure sealing the light emitting element and a phosphor film which is formed on an internal surface of the sealing structure. The sealing structure includes a blocking portion which is formed integrally with the substrate so as to surround the light emitting element on the substrate and functions as a reflector that reflects a light emitted from the light emitting element and a cover portion which is arranged on the top of the blocking portion and is bonded to the blocking portion.

Claims

1. A semiconductor device comprising:

a substrate;

a light emitting element mounted on the substrate by flip chip bonding;

a sealing structure sealing the light emitting element; and

a phosphor film which is formed on an internal surface of the sealing structure,

wherein the sealing structure includes;

a blocking portion which is formed of an electrolytic plating film integrally with the substrate so as to surround the light emitting element on the substrate and functions as a reflector that reflects a light emitted from the light emitting element;

a connection layer formed of an electrolytic plating film on an upper end of the blocking portion; and

a cover portion which is arranged on top of the blocking portion and is bonded to the connection layer.

2. The semiconductor device according to claim 1, wherein the light emitting element is an LED.

3. The semiconductor device according to claim 1, further comprising:

a through wiring passing through the substrate and is electrically connected to the light emitting element.

4. The semiconductor device according to claim 1, wherein a bonding portion of the cover portion, which is bonded to the connection layer, is formed by patterning.

5. A method for manufacturing a semiconductor device in which a light emitting element mounted on a substrate is sealed, said method comprising:

forming a seed layer on the substrate;

forming a resist pattern on the seed layer;

forming a blocking portion on the seed layer exposed from the resist pattern through electrolytic plating;

forming a connection layer on the blocking portion by electrolytic plating;

removing the resist pattern, and then removing the seed layer which is exposed by removing the resist pattern;

mounting the light emitting element by flip chip bonding in a region surrounded by the blocking portion on the substrate;

coating a phosphor film on the blocking portion; and

sealing the light emitting element by bonding a cover portion coated with phosphor film to the connection layer;

wherein the light emitting element mounting step is performed after the blocking portion forming step.

6. The method for manufacturing the semiconductor device according to claim 5, wherein the light emitting element is an LED.

7. The method for manufacturing the semiconductor device according to claim 5, further comprising:

coating the phosphor film on the light emitting element.

8. The method for manufacturing the semiconductor device according to claim 5, further comprising:

forming a through wiring which is formed to pass through the substrate; and

mounting the light emitting element so as to be connected to the through wiring.

9. The method for manufacturing the semiconductor device according to claim 5,

wherein the blocking portion functions as a reflector that reflects a light emitted from the light emitting element.

10. The method for manufacturing the semiconductor device according to claim 5,

wherein a bonding portion of the cover portion, which is bonded to the connection layer, is formed by patterning.