Semiconductor device for radio frequencies of more than 10 GHz and method for producing the device

• US 7,659,618 B2
• Filed: 07/18/2006
• Issued: 02/09/2010
• Est. Priority Date: 07/18/2005
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Pressel, Klaus, Theuss, Horst, Dangelmaier, Jochen
• Primary Examiner(s): Le; Thao X
• Assistant Examiner(s): ARORA, AJAY
• Application Number:
  US11/488,872
• Publication Number:
  US 20070023896A1
• Time in Patent Office: 1,302 Days
• Field of Search: 257/790, 257/728, 257/E21.581
• US Class Current: 257/728
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48471 the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
• CPC Class Codes: H01L 2224/48479 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/85051 Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
• CPC Class Codes: H01L 2224/85186 connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 2224/85986 Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/315 the encapsulation having a cavity
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/16235 : Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A semiconductor device for radio frequencies of more than 10 GHz having a semiconductor chip is disclosed. In one embodiment, the semiconductor chip, on its active top side, having a radio-frequency region and a low-frequency region and/or a region which is supplied with DC voltage. In one embodiment, the low-frequency region and/or the region which is supplied with DC voltage of the semiconductor chip is directly embedded in a plastic housing composition, the plastic housing composition is arranged such that it is spaced apart from the radio-frequency region on the active top side of the semiconductor chip.

Claims

1. A semiconductor device for radio frequencies of more than 10 GHz comprising:

a semiconductor chip which, on its active top side, comprises a radio-frequency region and a low-frequency region and/or a region which is supplied with DC voltage, the low-frequency region and/or the region which is supplied with DC voltage of the semiconductor chip being embedded in a plastic housing composition and the plastic housing composition being arranged such that it is spaced apart from the radio-frequency region, by a cavity, on the active top side of the semiconductor chip, wherein the radio-frequency region comprises at least one contact area having a bonding wire which is partially arranged in the cavity and is partially arranged in the plastic housing composition, and wherein the bonding wire is fixed in an adhesive layer between a cover and a wall structure of the cavity, the adhesive layer having a thickness which is greater than or equal to the diameter of the bonding wire.

2. The semiconductor device as claimed in claim 1, wherein the wall structure comprises a photoresist which can be patterned by means of photolithography and can be cured.

3. The semiconductor device as claimed in claim 1, wherein the wall structure is terminated by a cover whose areal extent has been adapted.

4. The semiconductor device as claimed in claim 1, wherein the wall structure and at least parts of the cover are surrounded by the plastic housing composition.

5. The semiconductor device as claimed in claim 3, wherein the top side of the cover is free of plastic housing composition.

6. The semiconductor device as claimed in claim 3, wherein the cover comprises a silicon plate.

7. The semiconductor device as claimed in claim 3, wherein the cover comprises a metal plate.

8. The semiconductor device as claimed in claim 3, wherein the cover comprises a glass plate.

9. The semiconductor device as claimed in claim 3, wherein the cover comprises a ceramic plate.

10. The semiconductor device as claimed in claim 3, wherein the cover comprises a polymeric plastic plate.

11. The semiconductor device as claimed in claim 3, wherein a double-sided adhesive film is arranged between the cover and the wall structure.

12. The semiconductor device as claimed in claim 3, wherein an adhesive layer is arranged between the cover and wall structure.

13. The semiconductor device as claimed in claim 1, wherein the active top side of the semiconductor chip has contact areas outside a wall structure, the contact areas being electrically connected to contact pads on a wiring substrate via bonding wires and being embedded by the plastic housing composition.

14. The semiconductor device as claimed in claim 3, wherein the active top side of the semiconductor chip has contact areas outside and inside the wall structure, the contact areas being electrically connected to contact pads on a wiring substrate via bonding wires.

15. The semiconductor device as claimed in claim 1, wherein a wall structure has a height h of between several hundred nanometers and a few millimeters, where 0.1 μ

m≦

h≦

2000 μ

m.

16. The semiconductor device as claimed in claim 1, wherein the semiconductor device is configured for use in distance radar sensor technology for road and/or rail vehicles and for aircraft in the taxiing traffic and parked traffic on airfields.

17. A semiconductor device for radio frequencies of more than 8 GHz comprising:

a semiconductor chip which, on its active top side, comprises a radio-frequency region and a low-frequency region and/or a region which is supplied with DC voltage; and

means for providing a plastic housing composition, the low-frequency region and/or the region which is supplied with DC voltage of the semiconductor chip being embedded in the plastic housing composition means and the plastic housing composition means being arranged such that it is spaced apart from the radio-frequency region, by a cavity, on the active top side of the semiconductor chip, wherein the radio-frequency region comprises at least one contact area having a bonding wire which is partially arranged in the cavity and is partially arranged in the plastic housing composition, and wherein the bonding wire is fixed in an adhesive layer between a cover and a wall structure of the cavity, the adhesive layer having a thickness which is greater than or equal to the diameter of the bonding wire.