RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor

• US 7,666,464 B2
• Filed: 10/23/2004
• Issued: 02/23/2010
• Est. Priority Date: 10/23/2004
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ramaswamy, Kartik, Hanawa, Hiroji, Collins, Kenneth S., Nguyen, Andrew, Al-Bayati, Amir, Gallo, Biagio
• Primary Examiner(s): Padgett; Marianne L
• Application Number:
  US10/971,772
• Publication Number:
  US 20060088655A1
• Time in Patent Office: 1,949 Days
• Field of Search: None
• US Class Current: 427/8
• CPC Class Codes: C23C 14/48 Ion implantation
• CPC Class Codes: C23C 14/54 Controlling or regulating the coating process
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

A method of measuring ion dose in a plasma immersion ion implantation reactor during ion implantation of a selected species into a workpiece includes placing the workpiece on a pedestal in the reactor and feeding into the reactor a process gas comprising a species to be implanted into the workpiece, and then coupling RF plasma source power to a plasma in the reactor. It further includes coupling RF bias power to the workpiece by an RF bias power generator that is coupled to the workpiece through a bias feedpoint of the reactor and measuring RF current at the feedpoint to generate a current-related value, and then integrating the current-related over time to produce an ion implantation dose-related value.

Claims

1. A method of performing plasma immersion ion implantation by implanting ions of a selected species into a production workpiece in a reactor chamber, comprising:

constructing a lookup table that correlates different values of a predetermined set of process parameters in said reactor chamber with measured values of an ion efficiency factor based upon measurements of plural ion implanted test workpieces, said ion efficiency factor defining a ratio of said selected species ion implanted in each test workpiece of said plural test workpieces to all species ion implanted into said each test workpiece during ion implantation of the selected species;

placing said production workpiece on a pedestal in said reactor chamber and feeding into said reactor chamber a process gas comprising said selected species;

coupling RF plasma source power to said process gas in said reactor chamber to generate a plasma comprising ions of said selected species so as to perform ion implantation of said ions of said selected species into said production workpiece;

coupling RF bias power to said production workpiece from an RF bias power generator through a bias feedpoint of said reactor chamber;

measuring RF current at said bias feedpoint to generate a current-related quantity;

computing an ion dose-related quantity from said current-related quantity, obtaining a present ion efficiency factor by sensing present values of said set of process parameters and applying said present values of said set of process parameters to said look-up table whereby to obtain from said look-up table said present ion efficiency factor, and multiplying said ion dose-related quantity by said present ion efficiency factor to produce a corrected ion dose-related quantity; and

comparing the corrected ion dose-related quantity to a desired ion dose-related quantity to produce a difference, and changing the RF plasma source power as a function of said difference.

2. The method of claim 1 wherein said ion dose-related quantity is the ion dose, and wherein said computing the ion dose-related quantity comprises integrating said current-related quantity over a time duration of said ion implantation to produce the ion dose-related quantity.

3. The method of claim 1 wherein said ion dose-related quantity is ion dose rate, and wherein said computing the ion dose-related quantity comprises computing said dose rate as a proportional function of said current-related quantity.

4. The method of claim 1 wherein said computing an ion dose-related quantity comprises:

dividing, by the area of said production workpiece and by the charge of a single ion of said selected species in said plasma,

said current-related quantity.

5. The method of claim 1 wherein said constructing said lookup table comprises:

producing said plural ion implanted test workpieces by ion implanting plural test workpieces in said reactor chamber under said different values of said predetermined set of process parameters;

testing each of said ion implanted test workpieces to determine the ion efficiency factor for each of said test workpieces; and

correlating in said look-up table each said ion efficiency factor to the corresponding set of values of said set of process parameters.

6. The method of claim 5 wherein the testing comprises:

measuring volume density of said selected species in said each test workpiece as a function of depth in said each test workpiece and forming a density versus depth distribution; and

integrating said density versus depth distribution over depth to produce an area density of said selected species.

7. The method of claim 6 wherein the integrating is preceded by transforming said RF current from said bias feed point to a location at least near said each test workpiece by a measurement point-to-workpiece transform.

8. The method of claim 7 further comprising determining said measurement point-to-workpiece transform prior to placing said each test workpiece in said reactor chamber by the following steps:

measuring a complex open circuit input impedance-related quantity at said, bias feedpoint;

measuring a complex short circuit input impedance-related quantity at said bias feedpoint; and

computing said measurement point-to-workpiece transform from a combination of said open circuit input impedance-related quantity and said short circuit input impedance-related quantity.

9. The method of claim 8 wherein said open circuit impedance related quantity is one of:

a. open circuit impedance;

b. open circuit admittance;

c. open circuit current, open circuit voltage and open circuit phase.

10. The method of claim 8 wherein said closed circuit impedance related quantity is one of:

a. closed circuit impedance;

b. closed circuit admittance;

c. closed circuit current, open circuit voltage and open circuit phase.

11. The method of claim 8 wherein the transforming comprises:

obtaining a plurality of frequency components comprising the fundamental and plural harmonics of the RF current and a voltage measured at the bias feedpoint;

combining said plurality of frequency components with said transform to obtain a frequency domain version of the current at said each test workpiece; and

transforming the frequency domain version of the current at the said each test workpiece into a time domain waveform of the current at said each test workpiece.

12. The method of claim 1 wherein:

at least some of said present values of said process parameters lie between respective ones of the sets of process parameter values contained in said look-up table; and

said obtaining said present ion efficiency factor comprises interpolating between corresponding ion efficiency factors stored in said look-up table.

13. The method of claim 1 wherein said predetermined set of process parameters comprise at least one of:

plasma source power level, RF bias voltage RF bias current, chamber pressure, flow rate of the process gas.

14. The method of claim 1 wherein:

said changing the source power comprises halting the ion implantation of said production workpiece when said corrected ion dose-related quantity reaches said desired ion dose-related quantity.

15. The method of claim 1 wherein the ion dose-related quantity is dose rate, said method further comprising:

issuing an alarm at a user interface if said dose rate exceeds a dose-rate limit value.

16. The method of claim 1 further comprising:

displaying said difference at a user interface.

17. The method of claim 1 further comprising measuring RF voltage at said bias feedpoint.

18. The method of claim 17 further comprising measuring ion energy of said selected species from said RF voltage.

19. The method of claim 18 wherein the measuring the ion energy comprises determining a characteristic parameter of said RF voltage.

20. The method of claim 19 wherein said characteristic parameter of said RF voltage comprises one of:

A. a time average of said RF voltage;

B. a peak value of said RF voltage;

C. a peak-to-peak value of said RF voltage;

D. an RMS value of said RF voltage.

21. The method of claim 19 further comprising multiplying said characteristic parameter by the charge of an ion of said selected species in the plasma in said reactor chamber.

22. The method of claim 19 further comprising:

comparing said ion energy with a desired ion energy value to determine an ion energy error; and

adjusting power level of said RF bias power by an amount that is a function of said ion energy error.

23. The method of claim 19 further comprising:

comparing said ion energy with a desired ion energy value to determine an ion energy error; and

rendering a display at a user interface relating to said ion energy error.

24. The method of claim 17 further comprising:

transforming said RF voltage from said bias feed point to a location at least near said production workpiece by a measurement point-to-workpiece transform.

25. The method of claim 24 further comprising determining said measurement point-to-workpiece transform prior to placing said production workpiece in said reactor chamber by the following steps:

measuring a complex open circuit input impedance-related quantity at said bias feedpoint;

measuring a complex short circuit input impedance-related quantity at said bias feedpoint; and

computing said measurement point-to-workpiece transform from a combination of said open circuit input impedance-related quantity and said short circuit input impedance-related quantity.

26. The method of claim 25 wherein said open circuit input impedance-related quantity comprises one of:

an open circuit input impedance;

an open circuit input admittance;

an open circuit current voltage and phase.

27. The method of claim 25 wherein said closed circuit input impedance-related quantity comprises one of:

a closed circuit input impedance;

a closed circuit input admittance;

a closed circuit current voltage and phase.

28. The method of claim 25 wherein the transforming comprises;

obtaining a plurality of frequency components comprising the fundamental and plural harmonics of the RF voltage and a current measured at the bias feedpoint;

combining said plurality of frequency components with said transform to obtain a frequency domain version of a voltage at the production workpiece; and

transforming the frequency domain version of the voltage at the production workpiece into a time domain waveform of the voltage at the production workpiece.

29. The method of claim 17 further comprising:

holding said production workpiece on said pedestal by applying a D.C. chucking voltage to a buried electrode in said pedestal;

determining from said RF voltage a D.C. workpiece voltage; and

determining a net clamping voltage from said D.C. workpiece voltage and said D.C. chucking voltage.

30. The method of claim 29 wherein the determining the D.C. workpiece voltage comprises determining a time average of said RF voltage.

31. The method of claim 29 further comprising:

comparing said net clamping voltage with a desired value to determine a clamping voltage error; and

adjusting said D.C. chucking voltage in accordance with said clamping voltage error.

32. The method of claim 29 further comprising:

sensing a temperature of said production workpiece;

comparing said temperature with a desired temperature to determine a temperature error; and

adjusting said D.C. chucking voltage by an amount tending to result in a reduction in said temperature error.

33. The method of claim 32 further comprising comparing said net clamping voltage with a clamping voltage desired range and rendering a user display in accordance with the comparing of said net clamping voltage and said clamping voltage desired range.

34. The method of claim 29 further comprising, prior to the determining the D.C. workpiece voltage:

transforming said RF voltage from said bias feedpoint to a location at least near said production workpiece by a measurement point-to-workpiece transformation.

35. The method of claim 34 further comprising determining said measurement point-to-workpiece transformation prior to placing said production workpiece in said reactor chamber by the following steps:

measuring a complex open circuit input impedance-related quantity at said bias feedpoint;

measuring a complex short circuit input impedance-related quantity at said bias feedipoint; and

computing said measurement point-to-workpiece transform from a combination of said open circuit input impedance-related quantity and said short circuit input impedance-related quantity.

36. The method of claim 35 wherein said open circuit input impedance-related quantity comprises one of:

an open circuit input impedance;

an open circuit input admittance;

an open circuit current voltage and phase.

37. The method of claim 35 wherein said closed circuit input impedance-related quantity comprises one of:

a closed circuit input impedance;

a closed circuit input admittance;

a closed circuit current voltage and phase.

38. The method of claim 1 wherein the measuring said RF current comprises sensing current measurement output of an RF probe connected at a measurement point at said bias feedpoint, said method further comprising obtaining a calibration factor for said RF current by performing the following steps prior to placing said production workpiece on said pedestal:

coupling said RF probe between said RF bias power generator and a dummy resistance;

comparing the current measurement output of said RF probe with the square root of the quotient of a known power output of said RF bias power generator divided by the resistance value of said dummy resistance to determine the calibration factor of said current measurement; and

after the measuring the RF current, multiplying said current-related quantity by said calibration factor.

39. The method of claim 17 wherein the measuring said RF voltage comprises sensing the voltage measurement output of an RF probe connected at a measurement point at said bias feedpoint, said method further comprising obtaining a calibration factor for said RF voltage by performing the following steps prior to placing said production workpiece on said pedestal:

coupling said RF probe between said RF bias power generator and a dummy resistance;

comparing the voltage measurement output of said RF probe with the square root of the product of a known power output of said RF bias power generator multiplied by the resistance value of said dummy resistance, to determine the calibration factor of said voltage measurement; and

after the measuring the RF voltage, multiplying said RF voltage by said calibration factor.