Inspection system, inspection method, and method for manufacturing semiconductor device

• US 7,667,454 B2
• Filed: 12/02/2008
• Issued: 02/23/2010
• Est. Priority Date: 01/30/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Arai, Yasuyuki, Akiba, Mai, Tachimura, Yuko
• Primary Examiner(s): PATEL, PARESH H
• Application Number:
  US12/326,623
• Publication Number:
  US 20090087930A1
• Time in Patent Office: 448 Days
• Field of Search: None
• US Class Current: 324/750.16
• CPC Class Codes: G01R 31/2886 Features relating to contacting the IC under test, e.g. probe heads; chucks G01R31/2865 takes precedence, test connections, e.g. test sockets, or probes per se, G01R1/04 or G01R1/06
• CPC Class Codes: G01R 31/2889 Interfaces, e.g. between probe and tester G01R31/31905 and G01R1/07364 take precedence
• CPC Class Codes: G01R 31/3025 Wireless interface with the DUT
• CPC Class Codes: G01R 31/303 of integrated circuits G01R31/305 - G01R31/315 take precedence
• CPC Class Codes: G06K 7/0095 Testing the sensing arrangement, e.g. testing if a magnetic card reader, bar code reader, RFID interrogator or smart card reader functions properly testing of electrical circuits G01R31/28

Abstract

The present invention provides an inspection system of ID chips that can supply a signal or power supply voltage to an ID chip without contact, and can increase throughput of an inspection process and an inspection method using the inspection system. The inspection system according to the present invention includes a plurality of inspection electrodes, a plurality of inspection antennas, a position control unit, a unit for applying voltage to each of the inspection antennas, and a unit for measuring potentials of the inspection electrodes. One feature of the inspection system is that a plurality of ID chips and the plurality of inspection electrodes are overlapped with a certain space therebetween, and the plurality of ID chips and the plurality of inspection antennas are overlapped with a certain space therebetween, and the plurality of ID chips are interposed between the plurality of inspection electrodes and the plurality of inspection antennas by the position control unit.

Claims

1. A method for manufacturing a semiconductor device comprising:

forming at least a first thin film transistor and a second thin film transistor over a substrate;

forming at least a first antenna and a second antenna over the substrate, the first antenna being on and electrically connected to the first thin film transistor, and the second antenna being on and electrically connected to the second thin film transistor;

placing the substrate between a first support medium having at least first and second inspection antennas and a second support medium having inspection electrodes, so that the first antenna and the second antenna are located over the first inspection antenna and the second inspection antenna, respectively, with the substrate interposed therebetween;

supplying a signal or power supply voltage to the first and second antennas via the first and second inspection antennas without contact with the first and second antennas;

moving the inspection electrodes over an arbitrary portion or a whole portion of at least the first and second antennas with a space therebetween;

conducting an inspection for grasping a first operating state of the first thin film transistor and the first antenna from a first voltage of the inspection electrodes and a first position of the inspection electrodes with respect to the first antenna, and a second operating state of the second thin film transistor and the second antenna from a second voltage of the inspection electrodes and a second position of the inspection electrodes with respect to the second antenna;

separating the first thin film transistor with the first antenna and the second thin film transistor from the substrate; and

attaching at least one of the first thin film transistor and the first antenna to a third support medium.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the substrate is an insulator.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the substrate is a glass substrate or a plastic substrate.

4. The method for manufacturing a semiconductor device according to claim 1, wherein the spaces are controlled by flowing a fluid thereinto.

5. The method for manufacturing a semiconductor device according to claim 1, wherein an inspection method by voltages applied to the first and second antennae are calculated by a method of successive approximation, a Fourier transform method using a projection slice theorem, or a convolution theorem method to grasp the first and second operating states is employed.

6. The method for manufacturing a semiconductor device according to claim 1, wherein the inspection electrodes are rotated.

7. The method for manufacturing a semiconductor device according to claim 1, wherein further comprising a step of forming an insulating film over the first thin film transistor, wherein then the first antenna is formed over the insulating film.

8. A method for manufacturing a semiconductor device comprising:

forming a first thin film transistor and a second thin film transistor over a substrate;

forming a first antenna on the first thin film transistor and a second antenna on the second thin film transistor over the substrate, the first antenna being electrically connected to the first thin film transistor, and the second antenna electrically connected to the second thin film transistor;

placing the substrate between a first support medium having first and second inspection antennas and a second support medium having first and second inspection electrodes so that the first antenna and the second antenna are located over a first inspection antenna and a second inspection antenna respectively, with the substrate interposed therebetween;

supplying a signal or power supply voltage to the first and second antennas via the first and second inspection antennas without contact with the first and second antennas;

moving first and second inspection electrodes with an arbitrary portion or a whole portion of the first and second antennas with a space therebetween;

conducting an inspection for grasping a first operating state of the first thin film transistor and the first antenna from a first voltage of the first inspection electrode and a first position of the first inspection electrode with respect to the first antenna, a second operating state of the second thin film transistor and the second antenna from a second voltage of the first inspection electrode and a second position of the first inspection electrode with respect to the second antenna, a third operating state of the first thin film transistor and the first antenna from a third voltage of a second inspection electrode and a third position of the second inspection electrode with respect to the first antenna, a fourth operating state of the second thin film transistor and the second antenna from a fourth voltage of the second inspection electrode and a fourth position of the second inspection electrode with respect to the second antenna,

separating the first thin film transistor with the first antenna and the second thin film transistor from the substrate; and

attaching at least one of the first thin film transistor and the first antenna to a third support medium.

9. The method for manufacturing a semiconductor device according to claim 8, wherein the substrate is an insulator.

10. The method for manufacturing a semiconductor device according to claim 8, wherein the substrate is a glass substrate or a plastic substrate.

11. The method for manufacturing a semiconductor device according to claim 8, wherein the spaces are controlled by flowing a fluid thereinto.

12. The method for manufacturing a semiconductor device according to claim 8, wherein an inspection method by which voltages applied to first and second antennae are calculated by a method of successive approximation, a Fourier transform method using a projection slice theorem, or a convolution theorem method to grasp the first, second, third and fourth operating states is employed.

13. The method for manufacturing a semiconductor device according to claim 8, wherein the first and second inspection electrodes are rotated.

14. The method for manufacturing a semiconductor device according to claim 8, wherein further comprising a step of forming an insulating film over the first thin film transistor, wherein then the first antenna is formed over the insulating film.