Interferometric modulators having charge persistence

• US 7,667,884 B2
• Filed: 10/26/2006
• Issued: 02/23/2010
• Est. Priority Date: 09/27/2004
• Status: Expired due to Fees

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Qualcomm MEMS Technologies Incorporated (Qualcomm, Inc.)
• Inventors: Chui, Clarence
• Primary Examiner(s): Thompson; Timothy J
• Application Number:
  US11/586,800
• Publication Number:
  US 20070041079A1
• Time in Patent Office: 1,216 Days
• Field of Search: 359/290, 359/291, 359/223, 359/224, 359/238
• US Class Current: 359/291
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26

Abstract

An iterferometric modulator is formed having a dielectric with charge persistence. The interferometric modulator is addressed by a method making advantageous use of the charge persistence property, wherein the interferometric modulator is pre-charged in such a way that the pre-charging is not observable to a viewer, and the actuation voltage threshold of the imod is significantly lowered. Subsequently the interferometric modulator may be actuated with a significantly lower actuation voltage, thereby saving power.

Claims

1. An electromechanical interferometric device comprising:

means for altering a state of the device, the state being based on an actuation threshold; and

means for shifting the actuation threshold to one of a plurality of functional differentiatable actuation thresholds by actuating the device, wherein the actuation threshold shifting means comprises a driving circuit.

2. The device of claim 1, wherein the state altering means comprises:

an electrode;

a dielectric layer coupled to the electrode, the dielectric layer comprising at least a substantially trappy surface; and

a movable reflective layer extending over the dielectric layer so as to form a cavity therebetween, the movable reflective layer being configured to contact the dielectric if an electrical potential between the electrode and at least a portion of the movable reflective layer is greater than the actuation threshold.

3. The device of claim 2, wherein the dielectric comprises at least one of silicon nitride, silicon dioxide, aluminum oxide, and titanium dioxide.

4. The device of claim 2, wherein the dielectric layer is configured to maintain the transferred charge for a period of time exceeding 100 ms after contact between the movable reflective layer and the dielectric layer is broken.

5. The device of claim 1, further comprising means for modulating light.

6. The device of claim 5, wherein the modulating means comprises an interferometric cavity.

7. The device of claim 5, further comprising means for connecting the device to additional light modulating means of an array.

8. The device of claim 7, wherein the connecting means comprises row and column electrodes.

9. The device of claim 7, wherein the device is configured to display an image.

10. An electromechanical device comprising:

an electrode;

a dielectric layer coupled to the electrode, the dielectric layer comprising at least a substantially trappy surface; and

a movable reflective layer extending over the surface of the dielectric layer so as to form a cavity therebetween, the movable reflective layer being configured to contact the dielectric if an electrical potential between the electrode and at least a portion of the movable reflective layer is greater than an actuation threshold,

wherein when the movable reflective layer contacts the dielectric layer charge is transferred between the movable reflective layer and the dielectric layer to significantly change the actuation threshold,

wherein the device comprises an interferometric light modulator configured to be connected to additional interferometric light modulators of an array.

11. The device of claim 10, wherein the array is configured to display an image.

12. The device of claim 10, wherein the dielectric layer is configured to maintain the transferred charge for a period of time exceeding 100 ms after contact between the movable reflective layer and the dielectric layer is broken.

13. The device of claim 10, wherein when the movable reflective layer contacts the dielectric layer the actuation threshold is changed to one of a plurality of functional differentiatable actuation thresholds.

14. An electromechanical interferometric device comprising:

means for altering a state of the device, the state being based on an actuation threshold;

means for significantly altering the actuation threshold to one of a plurality of functional differentiatable actuation thresholds by actuating the device;

means for modulating light; and

means for connecting the device to additional light modulating means of an array.

15. The device of claim 14, wherein the connecting means comprises row and column electrodes.

16. The device of claim 14, wherein the device is configured to display an image.

17. A method of manufacturing an electromechanical interferometric device, the method comprising:

forming an electrode;

forming a dielectric layer comprising at least a substantially trappy surface, the dielectric layer being coupled to the electrode;

forming a movable reflective layer over the dielectric layer so as to establish a cavity therebetween, the movable reflective layer being configured to contact the dielectric layer if an electrical potential between the electrode and at least a portion of the movable reflective layer is greater than an actuation threshold, and to transfer charge to the dielectric layer upon such contact; and

configuring the electrode and the movable reflective layer to be connected to additional MEMS devices of an array.

18. The method of claim 17, further comprising configuring the array to display an image.

19. The device of claim 17, further comprising configuring the dielectric layer to maintain the transferred charge for a period of time exceeding 100 ms after contact between the movable reflective layer and the dielectric layer is broken.