Light emitting device including a lamination layer

• US 7,675,074 B2
• Filed: 01/12/2007
• Issued: 03/09/2010
• Est. Priority Date: 05/15/2002
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Arai, Yasuyuki, Yamazaki, Shunpei
• Primary Examiner(s): Parker; Kenneth A
• Assistant Examiner(s): Ho; Anthony
• Application Number:
  US11/652,486
• Publication Number:
  US 20070114542A1
• Time in Patent Office: 1,152 Days
• Field of Search: 257/40, 257/84
• US Class Current: 257/84
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/11 characterised by the electroluminescent [EL] layers
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/8445 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 50/85 Arrangements for extracting light from the devices
• CPC Class Codes: H10K 50/856 comprising reflective means
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/125 including organic TFTs [OTFT]
• CPC Class Codes: H10K 59/17 Passive-matrix OLED displays
• CPC Class Codes: H10K 59/179 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

Abstract

A light emitting device having a plastic substrate is capable of preventing the substrate from deterioration with the transmission of oxygen or moisture content can be obtained. The light emitting device has light emitting elements formed between a lamination layer and an inorganic compound layer that transmits visual light, where the lamination layer is constructed of one unit or two or more units, and each unit is a laminated structure of a metal layer and an organic compound layer. Alternatively, the light emitting device has light emitting elements formed between a lamination layer and an inorganic compound layer that transmits visual light, where the lamination layer is constructed of one unit or two or more units, and each unit is a laminated structure of a metal layer and an organic compound layer, wherein the inorganic compound layer is formed so as to cover the end face of the lamination layer. In the present invention, the lamination layer is formed on the primary surface of the plastic substrate, so that a flexible substrate structure can be obtained while preventing the substrate from deterioration with the transmission of oxygen or moisture content.

Claims

1. A light emitting device comprising:

a substrate;

a lamination layer formed over the substrate, the lamination layer comprising a metal layer and an organic compound layer;

a partition wall layer formed over the lamination layer;

an intermediate layer formed over the lamination layer; and

a light emitting element formed over the lamination layer,

wherein the light emitting element comprises a first wiring, a second wiring crossed the first wiring, and a light emitting layer formed between the first wiring and second wiring, and

wherein the first wiring comprises a first portion overlapped the partition wall layer and a second portion,

wherein the first portion comprises a laminate of a reflector and a conductive material, and

wherein the second portion comprises the conductive material layer.

2. A light emitting device according to claim 1, wherein the first wiring has an angle θ

of a reflection surface of the reflector which is in the range of 30°

to 75°

with respect to a principal surface of the substrate.

3. A light emitting device according to claim 1, wherein the metal layer is formed of aluminum or aluminum alloy.

4. A light emitting device according to claim 1, wherein the substrate is one selected from the group consisting of polyether sulphone, polyallylate, polyimide, polyamide, acrylic resin, epoxy resin, polyethylene terephthalate, polyethylenenaphthalate and polycarbonate.

5. A light emitting device according to claim 1, wherein the metal layer has a thickness of 10 to 100 nm.

6. A light emitting device according to claim 1, wherein the partition wall layer is formed between the reflector and the second wiring.

7. A light emitting device comprising:

a substrate;

a lamination layer formed over the substrate, the lamination layer comprising a metal layer and an organic compound layer;

a partition wall layer formed over the lamination layer;

an intermediate layer formed over the lamination layer;

a light emitting element formed over the lamination layer; and

a signal input terminal formed over the lamination layer,

wherein the light emitting element comprises a first wiring, a second wiring crossed the first wiring, and a light emitting layer formed between the first wiring and second wiring,

wherein the first wiring comprises a first portion overlapped the partition wall layer and a second portion,

wherein the first portion comprises a laminate of a reflector and a conductive material,

wherein the second portion comprises the conductive material layer,

wherein the signal input terminal is formed of the same material as that of the first wiring, and

wherein the signal input terminal is electrically connected to an end portion of the second wiring.

8. A light emitting device according to claim 7, wherein the first wiring has an angle θ

of a reflection surface of the reflector which is in the range of 30°

to 75°

with respect to a principal surface of the substrate.

9. A light emitting device according to claim 7, wherein the metal layer is formed of aluminum or aluminum alloy.

10. A light emitting device according to claim 7, wherein the substrate is one selected from the group consisting of polyether sulphone, polyallylate, polyimide, polyamide, acrylic resin, epoxy resin, polyethylene terephthalate, polyethylenenaphthalate and polycarbonate.

11. A light emitting device according to claim 7, wherein the metal layer has a thickness of 10 to 100 nm.

12. A light emitting device according to claim 7, wherein the partition wall layer is formed between the reflector and the second wiring.

13. A light emitting device comprising:

a first substrate;

a lamination layer formed over the substrate, the lamination layer comprising a metal layer and an organic compound layer;

a partition wall layer formed over the lamination layer;

an intermediate layer formed over the lamination layer;

a light emitting element formed over the lamination layer;

a resin material formed over the light emitting element; and

a second substrate fixed on the first substrate,

wherein the light emitting element comprises a first wiring, a second wiring crossed the first wiring, and a light emitting layer formed between the first wiring and second wiring, and

wherein the first wiring comprises a first portion overlapped the partition wall layer and a second portion,

wherein the first portion comprises a laminate of a reflector and a conductive material, and

wherein the second portion comprises the conductive material layer.

14. A light emitting device according to claim 13, wherein the first wiring has an angle θ

of a reflection surface of the reflector which is in the range of 30°

to 75°

with respect to a principal surface of the first substrate.

15. A light emitting device according to claim 13, wherein the metal layer is formed of aluminum or aluminum alloy.

16. A light emitting device according to claim 13, wherein the first substrate is one selected from the group consisting of polyether sulphone, polyallylate, polyimide, polyamide, acrylic resin, epoxy resin, polyethylene terephthalate, polyethylenenaphthalate and polycarbonate.

17. A light emitting device according to claim 13, wherein the metal layer has a thickness of 10 to 100 nm.

18. A light emitting device according to claim 13, wherein the partition wall layer is formed between the reflector and the second wiring.