Spin-on-glass anti-reflective coatings for photolithography

• US 7,678,462 B2
• Filed: 07/11/2005
• Issued: 03/16/2010
• Est. Priority Date: 06/10/1999
• Status: Expired due to Fees

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Spear, Richard, Hacker, Nigel P., Baldwin, Teresa, Kennedy, Joseph
• Primary Examiner(s): Moore; Margaret G
• Application Number:
  US11/178,544
• Publication Number:
  US 20050245717A1
• Time in Patent Office: 1,709 Days
• Field of Search: 428/447
• US Class Current: 428/447
• CPC Class Codes: C03C 17/008 comprising a mixture of materials covered by two or more of the groups C03C17/02, C03C17/06, C03C17/22 and C03C17/28
• CPC Class Codes: C03C 17/30 with silicon-containing compounds
• CPC Class Codes: C08K 5/0008 Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
• CPC Class Codes: C08L 2666/28 Non-macromolecular organic substances
• CPC Class Codes: C08L 83/04 Polysiloxanes
• CPC Class Codes: C09D 183/04 Polysiloxanes
• CPC Class Codes: C09D 183/06 containing silicon bound to oxygen-containing groups C09D183/12 takes precedence
• CPC Class Codes: C09D 183/08 containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
• CPC Class Codes: G03F 7/0752 in non photosensitive layers or as additives, e.g. for dry lithography
• CPC Class Codes: G03F 7/091 characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• CPC Class Codes: H01L 21/0276 using an anti-reflective coating anti-reflective coating for lithography in general G03F7/09
• CPC Class Codes: Y10T 428/31663 As siloxane, silicone or silane

Abstract

Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.

Claims

1. A layered material comprising a dyed spin-on glass composition, wherein the composition comprises a silicon-containing moiety and an incorporatable organic absorbing compound that absorbs light over at least an approximately 10 nm wide wavelength range, the range at wavelengths less than about 375 nm, wherein the organic absorbing compound comprises at least one benzene ring and a reactive group comprising a hydroxyl group, an amine group, a carboxylic acid group or a silicon-triethoxy group, wherein the organic absorbing compound comprises a compound including anthraflavic acid, 9-anthracene carboxylic acid, 9-anthracene methanol, alizarin, quinzarin, triethoxysilylpropyl-1,8-naphthalimide, 9-anthracene carboxy-methyl triethoxysilane and mixtures thereof.

2. The layered material of claim 1, wherein the organic absorbing compound comprises 9-anthracene carboxy-methyl triethoxysilane.

3. The layered material of claim 1, wherein the silicon-containing moiety comprises a siloxane polymer.

4. The layered material of claim 3, wherein the siloxane polymer is a polymer comprising methylsiloxane, methylsilsesquioxane, methylphenylsiloxane, methylphenylsilsesquioxane, and silicate polymers.

5. The layered material of claim 1, wherein at least part of the spin-on glass composition can be selectively removed.