Semiconductor laser apparatus and fabrication method of the same

• US 7,684,459 B2
• Filed: 01/25/2006
• Issued: 03/23/2010
• Est. Priority Date: 08/18/2005
• Status: Active Grant

• Current Assignee: Fujifilm Business Innovation Corp. (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Xerox Company Limited (Xerox Holdings Corp.)
• Inventors: Mukoyama, Naotaka, Ishii, Ryoji, Nakayama, Hideo, Kuwata, Yasuaki, Murakami, Akemi
• Primary Examiner(s): Harvey; Minsun
• Assistant Examiner(s): Zhang; Yuanda
• Application Number:
  US11/338,739
• Publication Number:
  US 20070091952A1
• Time in Patent Office: 1,518 Days
• Field of Search: 372/45.01, 372/46.01, 372/50.124, 372/81, 372/87, 372/99
• US Class Current: 372/87
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/19107 off-chip wires
• CPC Class Codes: H01S 5/02212 Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
• CPC Class Codes: H01S 5/02251 using optical fibres
• CPC Class Codes: H01S 5/02253 using lenses
• CPC Class Codes: H01S 5/0237 by soldering
• CPC Class Codes: H01S 5/04252 characterised by the material
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18358 containing spacer layers to adjust the phase of the light wave in the cavity
• CPC Class Codes: H01S 5/3432 the whole junction comprising only (AI)GaAs

Abstract

There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance.

Claims

1. A semiconductor laser apparatus comprising:

an electrode of a semiconductor vertical cavity surface emitting laser (VCSEL) diode; and

a die attach that is used for bonding and is attached to the electrode, wherein

the electrode of the semiconductor VCSEL diode includes a first electrode layer that includes Au and a second electrode layer that is deposited on the first electrode layer and is at least one of materials that compose the die attach except Au, the second electrode layer intervened between the first electrode layer and the die attach so that the second electrode layer is directly attached to the die attach, wherein;

the die attach is made of Au—

Sn and the second electrode layer is made of Sn, and the electrode is configured to be Au/Ge/Au/Sn.

2. The semiconductor laser apparatus as claimed in claim 1, wherein the second electrode layer serves as an Au-rich suppression layer.

3. The semiconductor laser apparatus as claimed in claim 1, wherein the material of the die attach is an Au—

Sn eutectic alloy having a thickness of at least 100 μ

m.

4. The semiconductor laser apparatus as claimed in claim 1, wherein the electrode of the semiconductor laser diode is formed on a backside of a substrate.

5. A semiconductor vertical cavity surface emitting laser (VCSEL) apparatus comprising:

a lower reflector deposited on a substrate;

an active region;

an upper reflector that composes an oscillator with the lower reflector;

a metal portion in which a first opening is formed to define an emitting region of a laser beam generated in the active region; and

a light confinement region having a second opening that defines the emitting region of the laser beam provided between the metal portion and the lower reflector,

wherein;

a die attach attached to an electrode of the VCSEL apparatus is provided for bonding; and

the electrode of the surface emitting laser diode includes a first electrode layer that includes Au and a second electrode layer that is deposited on the first electrode layer and is at least one of materials that compose the die attach except Au, the second electrode layer intervened between the first electrode layer and the die attach so that the second electrode layer is directly attached to the die attach, wherein;

the die attach is made of Au—

Sn and the second electrode layer is made of Sn, and the electrode is configured to be Au/Ge/Au/Sn.

6. The semiconductor VCSEL apparatus as claimed in claim 5, wherein the surface emitting laser diode has a selectively oxidized post structure.

7. The semiconductor VCSEL apparatus as claimed in claim 5, wherein the second opening of the surface emitting laser diode has a diameter equal to or less than 5 μ

m.