Semiconductor device and method for manufacturing the same

DC
  • US 7,700,998 B2
  • Filed: 06/30/2008
  • Issued: 04/20/2010
  • Est. Priority Date: 07/03/2007
  • Status: Expired due to Fees
First Claim
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1. A trench gate type semiconductor device with trench contact structure, comprising:

  • a first semiconductor layer of a first conductivity type formed above a main surface of a semiconductor substrate;

    a second semiconductor layer of a second conductivity type formed on said first semiconductor layer;

    a third semiconductor layer of said first conductivity type formed on said second semiconductor layer;

    a plurality of gate electrodes which are formed in corresponding gate trenches via corresponding gate insulating films, said gate trenches being formed through said second semiconductor layer and said third semiconductor layer so as to run into said first semiconductor layer;

    a plurality of impurity regions of said second conductivity type which are formed at regions below bottoms of corresponding contact trenches, said contact trenches being formed at said third semiconductor layer in a thickness direction thereof between corresponding ones of said gate trenches and longitudinal cross sections of said contact trenches being shaped in semiellipse, respectively;

    first electrodes which are formed so as to embed said contact trenches and contacted with said impurity regions, respectively; and

    a second electrode formed on a rear surface of said semiconductor substrate.

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