Thin film transistor with channel region in recess

• US 7,705,357 B2
• Filed: 03/04/2003
• Issued: 04/27/2010
• Est. Priority Date: 03/05/2002
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Isobe, Atsuo, Miyairi, Hidekazu, Suzawa, Hideomi, Kato, Kiyoshi, Yamazaki, Shunpei
• Primary Examiner(s): Hu; Shouxiang
• Application Number:
  US10/377,725
• Publication Number:
  US 20040026696A1
• Time in Patent Office: 2,611 Days
• Field of Search: 257 52- 72, 438149-166
• US Class Current: 257/72
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02496 Layer structure
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02529 Silicon carbide
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02598 monocrystalline
• CPC Class Codes: H01L 21/02609 Crystal orientation
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02683 Continuous wave laser beam
• CPC Class Codes: H01L 21/02691 Scanning of a beam
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1281 by using structural features to control crystal growth, e.g. placement of grain filters
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78675 : with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 29/78696 : characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A semiconductor element with high current drive capability, capable of high-speed operation, and having little variation in pluralities of semiconductor elements is provided. It is characterized by the fact that semiconductor elements have a first crystalline semiconductor region including pluralities of crystal orientations, and the first crystalline semiconductor region being connected to a second crystalline semiconductor region which is conductive, wherein the first crystalline semiconductor region is extended in the direction parallel to the insulating film which extends in linear-shaped stripe pattern on the insulating surface, and the second crystalline semiconductor region is provided ranging over the insulating film which extends in linear-shaped stripe pattern.

Claims

1. A semiconductor element comprising:

a projection and a recess provided over an insulating surface, the projection provided in a linear-shaped stripe pattern and comprising an insulating material;

a first crystalline semiconductor region having a plurality of crystal orientations in the recess;

a second crystalline semiconductor region which is conductive and is provided over the projection and the recess, the first crystalline semiconductor region connected to the second crystalline semiconductor region,

a channel region provided in the first crystalline semiconductor region; and

a gate electrode provided adjacent to the channel region with a gate insulating film therebetween, the gate electrode overlapping with the projection and the recess,

wherein the first crystalline semiconductor region extends in a direction parallel to the linear-shaped stripe pattern, and

wherein a portion of the gate insulating film is provided in contact with the projection.

2. A semiconductor element according to claim 1, wherein the surface of the insulating surface is a surface of an insulating film provided over a glass substrate.

3. A semiconductor element according to claim 1, wherein width of the insulating film which extends in linear stripe pattern is 0.1 to 10 μ

m, the adjoining pattern interval is 0.01 to 2 μ

m, and film thickness is 0.01 to 3 μ

m.

4. A semiconductor element according to claim 1 wherein the semiconductor element is incorporated into one selected from the group consisting of a TV set, a video camera, a personal computer, a personal digital assistant, a sound playback apparatus, a digital camera, and a cellular phone.

5. A semiconductor element according to claim 1, wherein the other portion of the channel region is provided over the recess.

6. A semiconductor element according to claim 1, wherein the projection has a rectangular pattern.

7. A semiconductor element comprising:

a projection and a recess provided over an insulating surface, the projection provided in a linear-shaped stripe pattern and comprising an insulating material;

a first crystalline semiconductor region including a plurality of crystal orientations in the recess;

a second crystalline semiconductor region which is conductive and is provided over the projection and the recess, the first crystalline semiconductor region connected to the second crystalline semiconductor region;

a channel region provided in the first crystalline semiconductor region; and

a gate electrode provided adjacent to the channel region with a gate insulating film therebetween, the gate electrode overlapping with the projection and the recess,

wherein the first crystalline semiconductor region extends in a direction parallel to the linear-shaped stripe pattern,

wherein the second crystalline semiconductor region is provided over the projection,

wherein the second crystalline semiconductor region includes a portion thinner than the first crystalline semiconductor region, and

wherein a portion of the gate insulating film is provided in contact with the projection.

8. A semiconductor element according to claim 7, wherein the surface of the insulating surface is a surface of an insulating film provided over a glass substrate.

9. A semiconductor element according to claim 7, wherein width of the insulating film which extends in linear stripe pattern is 0.1 to 10 μ

m, the adjoining pattern interval is 0.01 to 2 μ

m, and film thickness is 0.01 to 3 μ

m.

10. The semiconductor element according to claim 7 wherein the semiconductor element is incorporated into one selected from the group consisting of a TV set, a video camera, a personal computer, a personal digital assistant, a sound playback apparatus, a digital camera, and a cellular phone.

11. A semiconductor element according to claim 7, wherein the other portion of the channel region is provided over the recess.

12. A semiconductor element according to claim 7, wherein the projection has a rectangular pattern.

13. A semiconductor element comprising:

a projection and a recess provided over an insulating surface, the projection provided in a linear-shaped stripe pattern and comprising an insulating material;

a first crystalline semiconductor region including a plurality of crystal orientations in the recess;

a second crystalline semiconductor region which is conductive and is provided over the projection and the recess, the first crystalline semiconductor region connected to the second crystalline semiconductor region,

a channel region provided in the first crystalline semiconductor region; and

a gate electrode provided adjacent to the channel region with a gate insulating film therebetween, the gate electrode overlapping with the projection and the recess,

wherein the first crystalline semiconductor region extends in a direction parallel to the linear-shaped stripe pattern,

wherein the second crystalline semiconductor region is used as a wiring,

wherein the second crystalline semiconductor region includes a portion with a thinner film than that of the first crystalline semiconductor region, and

wherein a portion of the gate insulating film is provided in contact with the projection.

14. A semiconductor element according to claim 13, wherein the surface of the insulating surface is a surface of an insulating film provided over a glass substrate.

15. A semiconductor element according to claim 13, wherein width of the insulating film which extends in linear stripe pattern is 0.1 to 10 μ

m, the adjoining pattern interval is 0.01 to 2 μ

m, and film thickness is 0.01 to 3 μ

m.

16. The semiconductor element according to claim 13 wherein the semiconductor element is incorporated into one selected from the group consisting of a TV set, a video camera, a personal computer, a personal digital assistant, a sound playback apparatus, a digital camera, and a cellular phone.

17. A semiconductor element according to claim 13, wherein the other portion of the channel region is provided over the recess.

18. A semiconductor element according to claim 13, wherein the projection has a rectangular pattern.

19. A semiconductor element comprising:

a projection and a recess provided over an insulating surface, the projection provided in a linear-shaped stripe pattern and comprising an insulating material;

a crystalline semiconductor region having a plurality of crystal orientations in the recess;

a channel region provided in the crystalline semiconductor region; and

a gate electrode provided adjacent to the channel region with a gate insulating film therebetween,

wherein the crystalline semiconductor region extends in a direction parallel to the linear-shaped stripe pattern, and

wherein a portion of the gate insulating film is provided in contact with the projection.

20. A semiconductor element according to claim 19, wherein the surface of the insulating surface is a surface of an insulating film provided over a glass substrate.

21. A semiconductor element according to claim 19, wherein width of the insulating film which extends in linear stripe pattern is 0.1 to 10 μ

m, the adjoining pattern interval is 0.01 to 2 μ

m, and film thickness is 0.01 to 3 μ

m.

22. A semiconductor element according to claim 19, wherein the semiconductor element is incorporated into one selected from the group consisting of a TV set, a video camera, a personal computer, a personal digital assistant, a sound playback apparatus, a digital camera, and a cellular phone.

23. A semiconductor element according to claim 19, wherein the other portion of the channel region is provided over the recess.

24. A semiconductor element according to claim 19, wherein the projection has a rectangular pattern.