Precursor composition, method of manufacturing precursor composition, inkjet coating ink, method of manufacturing ferroelectric film, piezoelectric device, semiconductor device, piezoelectric actuator, inkjet recording head, and inkjet printer

• US 7,713,348 B2
• Filed: 12/20/2005
• Issued: 05/11/2010
• Est. Priority Date: 12/24/2004
• Status: Active Grant

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Hamada, Yasuaki, Kijima, Takeshi, Iwashita, Setsuya
• Primary Examiner(s): Brunsman; David M
• Application Number:
  US11/312,971
• Publication Number:
  US 20060138382A1
• Time in Patent Office: 1,603 Days
• Field of Search: 106/287.19, 106/31.13
• US Class Current: 106/287.19
• CPC Class Codes: C01G 33/006 Compounds containing, besides niobium, two or more other elements, with the exception of oxygen or hydrogen
• CPC Class Codes: C01G 35/006 Compounds containing, besides tantalum, two or more other elements, with the exception of oxygen or hydrogen
• CPC Class Codes: C01P 2002/72 by d-values or two theta-values, e.g. as X-ray diagram
• CPC Class Codes: C01P 2002/82 by IR- or Raman-data
• CPC Class Codes: C01P 2004/03 obtained by SEM
• CPC Class Codes: C01P 2006/40 Electric properties
• CPC Class Codes: C04B 2235/3251 Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3287 Germanium oxides, germanates or oxide forming salts thereof, e.g. copper germanate
• CPC Class Codes: C04B 2235/3296 Lead oxides, plumbates or oxide forming salts thereof, e.g. silver plumbate
• CPC Class Codes: C04B 2235/3418 Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint glass constituents C04B2235/36
• CPC Class Codes: C04B 2235/3427 Silicates other than clay, e.g. water glass
• CPC Class Codes: C04B 2235/441 Alkoxides, e.g. methoxide, tert-butoxide
• CPC Class Codes: C04B 2235/449 Organic acids, e.g. EDTA, citrate, acetate, oxalate
• CPC Class Codes: C04B 35/493 containing also other lead compounds
• CPC Class Codes: C04B 35/495 based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
• CPC Class Codes: C04B 35/499 containing also titanates
• CPC Class Codes: C04B 35/624 Sol-gel processing
• CPC Class Codes: C04B 35/6264 Mixing media, e.g. organic solvents
• CPC Class Codes: C09D 11/30 Inkjet printing inks
• CPC Class Codes: C09D 11/36 based on non-aqueous solvents
• CPC Class Codes: C23C 18/1216 : Metal oxides C23C18/1212 takes precedence
• CPC Class Codes: C23C 18/1254 : Sol or sol-gel processing
• CPC Class Codes: H01L 21/02181 : the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/02183 : the material containing tantalum, e.g. Ta2O5
• CPC Class Codes: H01L 21/02186 : the material containing titanium, e.g. TiO2
• CPC Class Codes: H01L 21/02189 : the material containing zirconium, e.g. ZrO2
• CPC Class Codes: H01L 21/02194 : the material containing more than one metal element
• CPC Class Codes: H01L 21/02205 : the layer being characterised by the precursor material for deposition
• CPC Class Codes: H01L 21/02282 : liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02337 : treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/02356 : treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
• CPC Class Codes: H01L 21/31691 : with perovskite structure
• CPC Class Codes: H10B 53/00 : Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
• CPC Class Codes: H10B 53/30 : characterised by the memory core region
• CPC Class Codes: H10N 30/078 : by sol-gel deposition
• CPC Class Codes: H10N 30/8554 : Lead zirconium titanate based

Abstract

A precursor composition including a precursor for forming a ferroelectric, the ferroelectric being shown by a general formula AB_1-XC_XO₃, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, an element C including at least one of Nb and Ta, the precursor including at least the element B and the element C and part of the precursor including an ester bond, the precursor being dissolved or dispersed in an organic solvent, and the organic solvent including at least a first alcohol and a second alcohol having a boiling point and viscosity higher than a boiling point and viscosity of the first alcohol.

Claims

1. An inkjet coating ink including a precursor composition,

the precursor composition including a precursor for forming a ferroelectric,

the ferroelectric being shown by a general formula AB_1-XC_XO₃,

an element A including at least Pb,

an element B including at least one of Zr, Ti, V, W, and Hf,

an element C including at least one of Nb and Ta,

x being in a range of 0.1≦

x≦

0.3,

the precursor including the element A, the element B and the element C and part of the precursor including an ester bond,

the precursor being dissolved in an organic solvent,

the organic solvent including at least a first alcohol and a second alcohol having a boiling point and viscosity higher than a boiling point and viscosity of the first alcohol, and

the viscosity of the inkjet coating ink being 10 cp or less.

2. The inkjet coating ink as defined in claim 1

wherein the element B includes Zr and Ti, and the element C includes Nb.

3. The inkjet coating ink as defined in claim 1,

wherein the viscosity of the inkjet coating ink is 5 cp or less.

4. The inkjet coating ink as defined in claim 1,

wherein the second alcohol is a monohydric alcohol.

5. The inkjet coating ink as defined in claim 1,

wherein the ferroelectric includes 0.5 mol % or more of Si or Si and Ge.

6. The inkjet coating ink as defined in claim 1,

wherein the ferroelectric includes 0.5 to 5 mol % of Si or Si and Ge.