Semiconductor device and method of forming the same

  • US 7,713,828 B2
  • Filed: 11/15/2007
  • Issued: 05/11/2010
  • Est. Priority Date: 11/20/2006
  • Status: Active Grant
First Claim
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1. A method of forming a MOS transistor in an active region surrounded by an isolation film, the method comprising:

  • forming a gate insulating film on a first part of the active region;

    forming a gate electrode on the gate insulating film;

    forming diffusion layers in second parts of the active region, the second parts being different from the first part;

    forming first silicon layers on the diffusion layers by selective epitaxial method to form source and drain regions which comprise stacks of the first silicon layers and the diffusion layers;

    forming an inter-layer insulator which covers the gate electrode and the source and drain regions;

    forming contact holes in the inter-layer insulator, the contact holes reaching the source and drain regions;

    forming second silicon layers in the contact holes, the second silicon layers contacting with the source and drain regions;

    wherein a second impurity is introduced into the second silicon layers, and the second impurity is diffused to the first silicon layer.

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