Semiconductor optical devices, systems and methods of manufacturing the same

• US 7,715,458 B2
• Filed: 10/31/2007
• Issued: 05/11/2010
• Est. Priority Date: 01/18/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Ha, Kyoung-ho, Kim, Jun-youn, Cho, Soo-haeng
• Primary Examiner(s): PERT, EVAN T
• Application Number:
  US11/980,424
• Publication Number:
  US 20080175294A1
• Time in Patent Office: 923 Days
• Field of Search: 372/50.11, 257/14, 257/E33.008, 257/E33.023, 438/32
• US Class Current: 372/50.11
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/0218 Substrates comprising semiconducting materials from different groups of the periodic system than the active layer
• CPC Class Codes: H01S 5/0265 Intensity modulators intra-cavity modulators H01S5/0625
• CPC Class Codes: H01S 5/04256 characterised by the configuration
• CPC Class Codes: H01S 5/12 the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18
• CPC Class Codes: H01S 5/124 incorporating phase shifts
• CPC Class Codes: H01S 5/2004 Confining in the direction perpendicular to the layer structure
• CPC Class Codes: H01S 5/2232 with inner confining structure between the active layer and the lower electrode
• CPC Class Codes: H01S 5/3434 with a well layer comprising at least both As and P as V-compounds
• CPC Class Codes: H01S 5/4087 emitting more than one wavelength

Abstract

A semiconductor optical device includes a silicon substrate and a Group III-V semiconductor gain layer. The Group III-V semiconductor gain layer is formed on the silicon substrate. The silicon substrate or the Group III-V semiconductor gain layer has a dispersion Bragg grating formed therein. In a method of manufacturing a semiconductor optical device, a Group III-V semiconductor gain layer is formed on a silicon substrate. A dispersion Bragg grating is formed on the silicon substrate or the Group III-V semiconductor gain layer.

Claims

1. A semiconductor optical device comprising:

a silicon substrate; and

at least one Group III-V semiconductor gain layer formed on the silicon substrate, one of the silicon substrate and the at least one Group III-V semiconductor gain layer having a dispersion Bragg grating formed therein.

2. The semiconductor optical device of claim 1, wherein the Group III-V semiconductor gain layer includes a gain medium having the same lattice constant as the silicon substrate.

3. The semiconductor optical device of claim 2, wherein the gain medium includes Ga(In)NAsP or GaNAsP.

4. The semiconductor optical device of claim 1, wherein the Group III-V semiconductor gain layer is grown on the silicon substrate.

5. The semiconductor optical device of claim 1, wherein the dispersion Bragg grating is formed using holography or lithography.

6. The semiconductor optical device of claim 1, wherein the silicon substrate includes,

a first silicon layer,

an insulating layer formed on the first silicon layer, and

a second silicon layer formed on the insulating layer.

7. The semiconductor optical device of claim 6, wherein a plurality of silicon dioxide layers are formed on the second silicon layer and a waveguide is formed between the silicon dioxide layers.

8. The semiconductor optical device of claim 7, wherein the silicon dioxide layers are formed using an ion injection method.

9. The semiconductor optical device of claim 7, wherein the dispersion Bragg grating is formed by thermal oxidization.

10. The semiconductor optical device of claim 7, wherein the dispersion Bragg grating is formed on a top surface or a lateral side of the waveguide.

11. The semiconductor optical device of claim 10, wherein the dispersion Bragg grating is formed discontinuously.

12. The semiconductor optical device of claim 1, wherein an N metal layer is formed on the semiconductor gain layer and a P metal layer is formed in the lower portion of the silicon substrate.

13. The semiconductor optical device of claim 1, wherein a P metal layer is formed on the semiconductor gain layer and an N metal layer is formed in the lower portion of the silicon substrate.

14. The semiconductor optical device of claim 1, wherein a P metal layer is formed on each lateral side of the silicon substrate using evaporation or electro-plating, and via holes are formed in the P metal layer to connect electrodes.

15. The semiconductor optical device of claim 1, wherein the silicon substrate and the semiconductor gain layer are joined.

16. A wavelength division multiplexing (VDM) system comprising:

the semiconductor optical device of claim 1; and

a plurality of optical modulators;

wherein

the silicon substrate includes a plurality of rib waveguides coupled to a corresponding one of the plurality of optical modulators, each of the plurality of rib waveguides including a Bragg grating formed therein,

the at least one Group III-V semiconductor gain layer includes a plurality of Group III-V semiconductor gain layers formed on the silicon substrate, each of the plurality of Group III-V semiconductor gain layers corresponding to one of the plurality of rib waveguides, and

each Bragg grating having a different period of grating.

17. A method of manufacturing a semiconductor optical device, the method comprising:

forming a Group III-V semiconductor gain layer on a silicon substrate; and

forming a dispersion Bragg grating on the silicon substrate or the semiconductor gain layer.

18. The method of claim 17, wherein the Group III-V semiconductor gain layer includes a gain medium having a lattice constant that is the same as the silicon substrate.

19. The method of claim 18, wherein the gain medium includes Ga(In)NAsP or GaNAsP.

20. The method of claim 17, wherein the dispersion Bragg grating is formed using holography or lithography.

21. The method of claim 17, further including,

forming a first silicon layer,

forming an insulating layer on the first silicon layer, and

forming a second silicon layer on the insulating layer to form the silicon substrate.

22. The method of claim 21, wherein a plurality of silicon dioxide layers are formed on the second silicon layer and a waveguide is formed between the silicon dioxide layers.

23. The method of claim 22, wherein the dispersion Bragg grating is formed on a top surface or a lateral side of the waveguide.

24. The method of claim 21, wherein the silicon dioxide layers are formed using an ion injection method.

25. The method of claim 21, wherein the dispersion Bragg grating is formed by thermal oxidization.

26. The method of claim 17, wherein the dispersion Bragg grating is formed discontinuously.

27. The method of claim 17, wherein an N metal layer is formed on the semiconductor gain layer and a P metal layer is formed in the lower portion of the silicon substrate.

28. The method of claim 17, wherein a P metal layer is formed on the semiconductor gain layer and an N metal layer is formed in the lower portion of the silicon substrate.

29. The method of claim 17, wherein a P metal layer is formed on each lateral side of the silicon substrate using an evaporation or electro-plating method, and via holes are formed in the P metal layer to connect electrodes.