Method and system for controlling radical distribution

• US 7,718,030 B2
• Filed: 09/23/2005
• Issued: 05/18/2010
• Est. Priority Date: 09/23/2005
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation, Tokyo Electron Limited
• Original Assignee: International Business Machines Corporation, Tokyo Electron Limited
• Inventors: Chen, Lee, Horak, David V., Funk, Merritt, Strang, Eric J.
• Primary Examiner(s): LUND, JEFFRIE ROBERT
• Application Number:
  US11/233,025
• Publication Number:
  US 20070068625A1
• Time in Patent Office: 1,698 Days
• Field of Search: 118/715, 156/345.29, 156/345.33, 156/345.34
• US Class Current: 156/345.29
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32834 Exhausting

Abstract

A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

Claims

1. A plasma processing system comprising:

a processing chamber;

a substrate holder configured to hold a substrate for plasma processing;

a gas injection assembly including a central region and a peripheral region, the gas injection assembly comprising;

a gas injection assembly evacuation port, limited to the central region of the gas injection assembly, including a baffle plate including at least two openings and configured to evacuate gases from a central region of the substrate, and

a gas injection system, including a plurality of gas injection ports, configured to inject gases in said process chamber, each of the plurality of gas injection ports being radially outward from every one of the at least two openings of the gas injection assembly evacuation port; and

a chamber evacuation port configured to evacuate gases from a peripheral region surrounding said central region of the substrate.

2. The system of claim 1, wherein said gas injection system comprises at least two zones configured to inject gases, the at least two zones being arranged concentrically around the center of the gas injection assembly.

3. The system of claim 2, wherein said at least two zones comprise holes in a surface of the gas injection assembly facing the substrate holder configured to inject the gases, said holes being substantially equally distributed over the surface of the gas injection assembly facing the substrate holder.

4. The system of claim 1, wherein

the baffle plate is configured to separate the gas injection assembly evacuation port from an interior of said chamber;

and

said gas injection assembly evacuation port further comprises;

an exhaust duct, coupled to the at least two openings, having an entrant region located substantially in the center of the removable baffle plate, and

a pump coupled to said exhaust duct, and configured to evacuate gases through said entrant region.

5. The system of claim 4, wherein said pump is a turbomolecular pump.

6. The system of claim 4, wherein said baffle plate comprises openings configured to allow gas to pass from said interior to the pump, while impeding the plasma from passing from said interior to the pump.

7. The system of claim 6, wherein said openings are tapered, a wider opening of the holes being arranged to face said interior.

8. The system of claim 6, wherein the baffle plate is mounted on a lower surface of the gas injection assembly.

9. The system of claim 4, wherein the entrant region has a diameter between 1 cm and 15 cm.

10. The system of claim 4, wherein an aspect ratio (ratio of length to diameter) of each of the openings in the gas injection assembly evacuation port located within the removable baffle plate ranges from 1 to 200.

11. The system of claim 4, wherein one or more of the openings of the gas injection assembly evacuation port located within the removable baffle plate can be tapered with an angle of inclination of a tapered surface ranging from 0 to 30 degrees.

12. The system of claim 4, wherein the removable baffle plate is threaded to screw into a threaded recess in the gas injection assembly.

13. The system of claim 1, wherein said gas injection evacuation port further comprises:

the at least two openings arranged substantially concentrically around a center in the central region of the gas injection assembly; and

a pump coupled to said at least two holes, and configured to evacuate gases through said at least two holes.

14. The system of claim 1, wherein said chamber evacuation port comprises a sidewall port coupled to said processing chamber.

15. The system of claim 1, wherein said chamber evacuation port comprises a peripheral evacuation port on said gas injection assembly and radially spaced from said gas injection assembly evacuation port.

16. A plasma processing system comprising:

a processing chamber configured to contain a plasma therein;

a substrate holder configured to hold a substrate for plasma processing;

means for evacuating a central region of said processing chamber;

gas injection assembly including;

an evacuation port in a central region of the gas injection assembly and coupled to a baffle plate including, at least two openings, and

a plurality of gas injection ports in the central region and a peripheral region of the gas injection assembly, each of the plurality of gas injection ports being radially outward from the evacuation port and the at least two openings of the baffle plate coupled thereto; and

means for evacuating a peripheral region of said processing chamber.

17. The system of claim 16, further comprising means for retaining said plasma within said process chamber.