Seamless stitching of patterns formed by interference lithography

• US 7,718,326 B2
• Filed: 06/17/2006
• Issued: 05/18/2010
• Est. Priority Date: 06/17/2005
• Status: Active Grant

• Current Assignee: Vincent E. Stenger
• Original Assignee: Vincent E. Stenger
• Inventors: Stenger, Vincent E
• Primary Examiner(s): Rosasco; Stephen
• Assistant Examiner(s): Fraser; Stewart A
• Application Number:
  US11/454,274
• Publication Number:
  US 20070023692A1
• Time in Patent Office: 1,431 Days
• Field of Search: 430/5, 430/396, 430/22, 430/30, 430/394, 430/311, 250/492.2
• US Class Current: 430/22
• CPC Class Codes: G03F 7/70408 Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
• CPC Class Codes: G03F 7/70475 Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
• CPC Class Codes: G03F 9/7011 Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
• CPC Class Codes: G03F 9/7088 Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Abstract

This invention addresses the scalability problem of periodic “nanostructured” surface treatments such as those formed by interference lithography. A novel but simple method is described that achieves seamless stitching of nanostructure surface textures at the pattern exposure level. The described tiling approach will enable scaling up of coherent nanostructured surfaces to arbitrary area sizes. Such a large form factor nanotechnology will be essential for fabricating large aperture, coherent diffractive elements. Other applications include high performance, antiglare/antireflection and smudge resistant Motheye treatments for display products such as PDA'"'"'s, laptop computers, large screen TV'"'"'s, cockpit canopies, instrument panels, missile and targeting domes, and, more recently, “negative-index” surfaces. Although ideal for seamless stitching of nanometer scale patterns, the technology is broadly applicable to any situation where an arbitrarily large area needs to be seamlessly tiled with a smaller base pattern that has periodic overlap able boundaries.

Claims

1. A method for stitch alignment, tiling and printing of patterns on a substrate, the method comprising:

(a) providing a substrate wherein the substrate has a photosensitive surface capable of exhibiting a photo bleaching effect;

(b) positioning the substrate such that an original position of the substrate is established;

(c) creating a first pattern at a first region of the substrate by image exposure by radiation onto the photosensitive surface of a selected region of the substrate surface wherein the first pattern creates a post-exposure impression of the first pattern in the form of bleaching and thereby creating a reflection or transmission mask in the photosensitive surface;

(d) positioning the substrate such that a second position of the substrate is established for forming a second pattern at a second region of the substrate substantially adjacent to the first pattern wherein the second pattern creates a pre-exposure pattern of the second pattern on the photosensitive surface forming a partially overlapping region between the post-exposure impression of the first pattern and the pre-exposure pattern of the second pattern;

(e) measuring reflected or transmitted radiation of the post-exposure impression of the first pattern and the pre-exposure pattern of the second pattern within one or more overlapping regions, wherein the radiation reflection or transmission is measured by one or more photo-detectors;

(f) determining the degree of stitch alignment between the post-exposure impression of the first pattern and the pre-exposure pattern of the second pattern within one or more overlapping regions;

(g) adjusting the alignment based on the measured intensity of the reflected radiation, transmitted radiation or both until new images of the first and second regions are aligned using the post-exposure impression as a relative position reference;

wherein the post exposures create base patterns at a plurality of partially overlapping tiled positions.

2. The method according to claim 1, wherein the patterns are formed by interference lithography using a plurality of monochromatic exposure beams to create the interference pattern on the substrate recording plane.

3. The method according to claim 2, wherein the exposure source radiation is provided in single mode Gaussian beams delivered by collimating optics means.

4. The method according to claim 3, wherein the exposure source radiation comprises collimating optics positioned to achieve cylindrical beam waists at the interference pattern on the substrate surface.

5. The method according to claim 2, wherein the bleaching effect of the photosensitive layer forms a stitch alignment mask used to register the post exposure pattern position relative to the new exposure pattern position and wherein the degree of stitch alignment is by imaging of the pattern overlap region.

6. The method according to claim 5, further comprising relative positioning of the substrate or pattern to the relative peak change in reflected or transmitted light in order to stitch align the adjacent pre-exposure pattern with a post exposure pattern.

7. The method according to claim 6, wherein the method further comprises using a multi-beam interference fringe pattern, wherein the phase of at least one radiation beam is modulated in order to align the spatial phase of the fringes.

8. The method according to claim 6, wherein the movable stage comprises a coarse adjusting stage that holds the substrate, and one or more fine adjustment positioners which provide for fine XY and tilt/rotation movement.

9. The method according to claim 8, wherein the method further comprises fine stitch alignment using optical modulation.

10. The method according to claim 6, wherein mask is a permanent effect in the exposed surface.

11. The method according to claim 6, wherein the mask is a semi-permanent effect in the exposed surface.

12. The method according to claim 11, wherein the method further comprises alignment feedback between pre and post exposures and the pre-exposure pattern is tiled by overlapping and meshing with post-exposure patterns using an alignment error feedback signal.

13. The method according to claim 12, wherein the overall exposure pattern intensity profile is modified at the boundaries where stitching overlap occurs so as to ensure a more spatially uniform exposure dosage.

14. The method according to claim 13, wherein the photosensitive surface comprises a photoresist layer.

15. The method according to claim 13, wherein the photoresist undergoes a permanent change after exposure.

16. The method according to claim 13, wherein the photoresist is a positive photoresist which provides higher photo-resist optical transmission after exposure.

17. The method according to claim 13, wherein one or more photoresist layers is applied to an optically transparent substrate and the post exposure pattern results in higher optical transmission.

18. The method according to claim 13, wherein the substrate further comprises a high contrast photoresist.

19. The method according to claim 13, wherein the aligned position is determined by dithering of the relative pattern position by fine high speed positioning control capable of determining the optimal alignment for overlap regions of the patterns to locate and lock the pre-exposure pattern to the previous exposed pattern in the overlap region.