Gas distribution system for improved transient phase deposition
First Claim
1. A gas distribution system for providing a gas flow to a process chamber comprising:
- a gas ring including an outer surface and an inner surface;
a gas inlet disposed at the outer surface of the gas ring, the gas inlet being fluidicly coupled with a first arcuate channel which is disposed between the outer surface and the inner surface of the gas ring;
a plurality of gas outlets distributed over the inner surface of the gas ring, the plurality of gas outlets being fluidicly coupled with a second arcuate channel which is disposed between the outer surface and the inner surface of the gas ring; and
a plurality of holes extending from the first arcuate channel to the second arcuate channel to fluidicly couple the first arcuate channel to the second arcuate channel within the gas ring, the first arcuate channel being fluidicly coupled to the process chamber only through the second arcuate channel, the plurality of holes comprising a first hole and a second hole, the first hole having a first angle from the inlet and a first diameter, the second hole having a second angle from the inlet and a second diameter, the first hole extending from the first arcuate channel to the second arcuate channel with the first angle and the first diameter, the second hole extending from the first arcuate channel to the second arcuate channel with the second angle and the second diameter, wherein the first angle and the first diameter are less than the second angle and the second diameter to provide substantially uniform gas flow through the outlets;
wherein the first arcuate channel extends less than 360°
partially around the inner surface of the gas ring with two first channel ends spaced from one another and the second arcuate channel extends 360°
around the inner surface of the gas ring.
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Accused Products
Abstract
Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.
41 Citations
10 Claims
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1. A gas distribution system for providing a gas flow to a process chamber comprising:
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a gas ring including an outer surface and an inner surface; a gas inlet disposed at the outer surface of the gas ring, the gas inlet being fluidicly coupled with a first arcuate channel which is disposed between the outer surface and the inner surface of the gas ring; a plurality of gas outlets distributed over the inner surface of the gas ring, the plurality of gas outlets being fluidicly coupled with a second arcuate channel which is disposed between the outer surface and the inner surface of the gas ring; and a plurality of holes extending from the first arcuate channel to the second arcuate channel to fluidicly couple the first arcuate channel to the second arcuate channel within the gas ring, the first arcuate channel being fluidicly coupled to the process chamber only through the second arcuate channel, the plurality of holes comprising a first hole and a second hole, the first hole having a first angle from the inlet and a first diameter, the second hole having a second angle from the inlet and a second diameter, the first hole extending from the first arcuate channel to the second arcuate channel with the first angle and the first diameter, the second hole extending from the first arcuate channel to the second arcuate channel with the second angle and the second diameter, wherein the first angle and the first diameter are less than the second angle and the second diameter to provide substantially uniform gas flow through the outlets; wherein the first arcuate channel extends less than 360°
partially around the inner surface of the gas ring with two first channel ends spaced from one another and the second arcuate channel extends 360°
around the inner surface of the gas ring. - View Dependent Claims (2, 3, 4, 5)
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6. In an apparatus for processing a semiconductor substrate by flowing a process gas into a chamber and causing a reaction of the process gas in the chamber, a gas distribution system for directing a flow of the process gas into the chamber, the gas distribution system comprising:
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a gas ring including an outer periphery and an inner periphery; a gas inlet disposed at the outer periphery of the gas ring, the gas inlet being fluidicly coupled with a first arcuate channel which is disposed between the outer periphery and the inner periphery of the gas ring; and a plurality of gas outlets distributed over the inner periphery of the gas ring, the plurality of gas outlets being fluidicly coupled with a second arcuate channel which is disposed between the outer periphery and the inner periphery of the gas ring; wherein the first arcuate channel is fluidicly coupled with the second arcuate channel at a plurality of locations via a plurality of holes extending from the first arcuate channel to the second arcuate channel within the gas ring, the first arcuate channel being fluidicly coupled to the chamber only through the second arcuate channel, the plurality of holes comprising a first hole and a second hole, the first hole extending from the first arcuate channel at a first location separated from the inlet along the first arcuate channel by a first angle, the second hole extending from the first arcuate channel at a second location separated from the inlet along the first arcuate channel by a second angle, the first hole having a first diameter and extending from the first arcuate channel to the second arcuate channel with the first angle and the first diameter, the second hole having a second diameter and extending from the first arcuate channel to the second arcuate channel with the second angle and the second diameter, wherein the first angle and the first diameter are less than the second angle and the second diameter to provide a substantially uniform gas distribution via the gas outlets during a transient period when a gas is initially introduced into the gas ring; wherein the first arcuate channel extends less than 360°
partially around the inner periphery of the gas ring with two first channel ends spaced from one another and the second arcuate channel extends 360°
around the inner periphery of the gas ring. - View Dependent Claims (7, 8, 9, 10)
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Specification