Silicon crystallization apparatus and silicon crystallization method thereof

• US 7,728,256 B2
• Filed: 12/23/2004
• Issued: 06/01/2010
• Est. Priority Date: 12/24/2003
• Status: Expired due to Fees

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Display Co., Ltd.
• Inventors: Kim, Young Joo, Jung, Yun Ho
• Primary Examiner(s): ELVE, MARIA ALEXANDRA
• Application Number:
  US11/019,353
• Publication Number:
  US 20050142819A1
• Time in Patent Office: 1,986 Days
• Field of Search: 219/121.82, 219/121.85, 219/121.6
• US Class Current: 219/121.82
• CPC Class Codes: B23K 26/0622 by shaping pulses
• CPC Class Codes: B23K 26/0823 Devices involving rotation of the workpiece
• CPC Class Codes: B23K 26/0853 Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
• CPC Class Codes: B23K 37/0461 Welding tables
• CPC Class Codes: C30B 11/005 by irradiation or electric discharge
• CPC Class Codes: C30B 29/06 Silicon
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0268 Shape of mask
• CPC Class Codes: H01L 21/68 for positioning, orientation or alignment

Abstract

A novel silicon crystallization apparatus and a silicon crystallization method renders it is possible to form alignment key without additional photolithography, and to adjust a substrate to a correct position by sensing a deviation of the substrate when the substrate is loaded. The silicon crystallization apparatus includes a moving stage being moved in a horizontal direction, and a fixing plate provided in the moving stage, to fix a substrate. A rotating frame is provided in the moving stage, to rotate the fixing plate.

Claims

1. A stage for crystallization comprising:

a moving stage that can move in a horizontal direction;

a fixing plate provided in the moving stage, the fixing plate configured to fix a substrate;

a rotating frame provided in the moving stage, the rotating frame configured to rotate the fixing plate;

a plurality of adsorption pins provided in the fixing plate, the adsorption pins capable of being moved up and down, wherein the adsorption pins are capable of adsorbing the substrate;

a vacuum groove formed in a surface of the fixing plate, the vacuum groove capable of adsorbing the substrate;

an optical device configured to crystallize silicon by irradiating laser beams to the substrate; and

a sensing device provided in the optical device, the sensing device facing toward an edge of the substrate to directly sense the edge of the substrate, and configured to control the movement of the moving stage, the fixing plate and the rotating frame to align the substrate.

2. The stage for crystallization of claim 1, wherein, when the substrate is loaded, the adsorption pins are projecting above the fixing plate so as to fix the substrate, and then the fixing plate is moved down while fixing the substrate, so that the substrate is loaded onto the surface of the fixing plate.

3. The stage for crystallization of claim 1, wherein, when the substrate is unloaded, the adsorption pins are projecting above the fixing plate, so that the substrate is spaced apart from the fixing plate.

4. The stage for crystallization of claim 1, wherein the vacuum groove has a lattice shape.

5. The stage for crystallization of claim 1, wherein the sensing device senses directly the edge of the substrate to determine sliding of the substrate.

6. A silicon crystallization apparatus comprising:

a stage configured to fix a substrate having silicon deposited thereon, the stage being rotatably and movably provided with the substrate in a horizontal direction;

an optical device for crystallizing the silicon by irradiating laser beams to the substrate; and

a sensing device provided in the optical device, the sensing device facing toward an edge of the substrate to directly sense the edge of the substrate, and configured to control the movement of the stage to align the substrate,

the stage including;

a moving stage configured to move in a horizontal direction;

a fixing plate provided in the moving stage so as to fix the substrate;

a rotating frame provided in the moving stage so as to rotate the fixing plate;

a plurality of adsorption pins provided in the fixing plate, the adsorption pins capable of being moved up and down, wherein the adsorption pins are capable of adsorbing the substrate; and

a vacuum groove provided in the surface of the fixing plate.

7. The silicon crystallization apparatus of claim 6, wherein the optical device includes:

a laser beam generator;

a focusing lens to focus the laser beams;

a mask to dividedly irradiate the focused laser beams onto the substrate when forming alignment keys;

a crystallization mask to selectively irradiate the focused laser beams onto the substrate when performing a crystallization process; and

a reduction lens to reduce the laser beams passing through the mask for formation of the alignment keys and the crystallization mask.

8. The silicon crystallization apparatus of claim 6, wherein, when the substrate is loaded, the adsorption pins project above the fixing plate so as to fix the substrate, and then the fixing plate is moved down while fixing the substrate, so that the substrate is loaded on the surface of the fixing plate.

9. The silicon crystallization apparatus of claim 6, wherein, when the substrate is unloaded, the adsorption pins project above the fixing plate, so that the substrate is spaced apart from the fixing plate.

10. The silicon crystallization apparatus of claim 6, wherein the vacuum groove has a lattice shape.

11. The silicon crystallization apparatus of claim 6, wherein the sensing device includes at least first, second, and third sensors.

12. The silicon crystallization apparatus of claim 11, wherein the first and second sensors are positioned to correspond with two portions of the edge of the length-side direction of the substrate, and the third sensor is positioned to correspond with the edge of the width-side direction of the substrate.

13. The silicon crystallization apparatus of claim 11, wherein the first, second, and third sensors comprise CCD cameras.

14. The silicon crystallization apparatus of claim 11, wherein the first, second, and third sensors comprise LD sensors.

15. The silicon crystallization apparatus of claim 6, wherein the sensing device senses directly the edge of the substrate to determine sliding of the substrate.