Liquid crystal display device and method of fabricating the same
First Claim
Patent Images
1. A liquid crystal display (LCD) device, comprising:
- a first substrate and a second substrate facing each other and having a liquid crystal layer interposed therebetween;
a gate line and a data line crossing each other to define a pixel region on the first substrate;
a thin film transistor connected to the gate and data lines;
a first protrusion and a second protrusion formed on the first substrate;
a pixel electrode connected to the thin film transistor in the pixel region; and
a first patterned spacer and a second patterned spacer formed on the second substrate, wherein the first patterned spacer corresponds to the first protrusion and the second patterned spacer corresponds to the second protrusion,wherein the first protrusion has a first height and the second protrusion has a second height such that the first height is greater than the second height,wherein the first patterned spacer and the second patterned spacer have substantially a same height, such that the first patterned spacer contacts the first protrusion and the second patterned spacer is separated from the second protrusion,wherein the thin film transistor includes a gate electrode extending from the gate line, a gate insulating layer on the gate electrode, a semiconductor layer including an active layer and an ohmic contact layer on the gate insulating layer, and source and drain electrodes spaced apart from each other on the semiconductor layer,wherein the first protrusion includes a first layer, a second layer and a third layer such that the first layer is formed of a same layer as the active layer, the second layer is formed of a same layer as the ohmic contact layer, and the third layer is formed of a same layer as the source and drain electrodes,wherein the gate line has a first portion with a first width corresponding to the first and second protrusions and a second portion with a second width, the first width being greater than the second width, and wherein the second protrusion includes a single layer of a same layer as the active layer.
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Abstract
A liquid crystal display (LCD) device includes a gate line and a data line crossing each other to define a pixel region on a first substrate, a thin film transistor connected to the gate line and the data line, a first protrusion and a second protrusion formed on the first substrate, a pixel electrode connected to the thin film transistor in the pixel region, a first patterned spacer and a second patterned spacer formed on a second substrate facing the first substrate, wherein the first patterned spacer corresponds to the first protrusion, and the second patterned spacer corresponds to the second protrusion.
6 Citations
11 Claims
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1. A liquid crystal display (LCD) device, comprising:
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a first substrate and a second substrate facing each other and having a liquid crystal layer interposed therebetween; a gate line and a data line crossing each other to define a pixel region on the first substrate; a thin film transistor connected to the gate and data lines; a first protrusion and a second protrusion formed on the first substrate; a pixel electrode connected to the thin film transistor in the pixel region; and a first patterned spacer and a second patterned spacer formed on the second substrate, wherein the first patterned spacer corresponds to the first protrusion and the second patterned spacer corresponds to the second protrusion, wherein the first protrusion has a first height and the second protrusion has a second height such that the first height is greater than the second height, wherein the first patterned spacer and the second patterned spacer have substantially a same height, such that the first patterned spacer contacts the first protrusion and the second patterned spacer is separated from the second protrusion, wherein the thin film transistor includes a gate electrode extending from the gate line, a gate insulating layer on the gate electrode, a semiconductor layer including an active layer and an ohmic contact layer on the gate insulating layer, and source and drain electrodes spaced apart from each other on the semiconductor layer, wherein the first protrusion includes a first layer, a second layer and a third layer such that the first layer is formed of a same layer as the active layer, the second layer is formed of a same layer as the ohmic contact layer, and the third layer is formed of a same layer as the source and drain electrodes, wherein the gate line has a first portion with a first width corresponding to the first and second protrusions and a second portion with a second width, the first width being greater than the second width, and wherein the second protrusion includes a single layer of a same layer as the active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification