High-voltage semiconductor switching element

• US 7,732,833 B2
• Filed: 09/11/2008
• Issued: 06/08/2010
• Est. Priority Date: 10/01/2007
• Status: Expired due to Fees

• Current Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Yamagiwa, Hiroto, Saji, Takashi
• Primary Examiner(s): LEBENTRITT, MICHAEL
• Application Number:
  US12/208,615
• Publication Number:
  US 20090085061A1
• Time in Patent Office: 635 Days
• Field of Search: 257138-153, 257335-342, 257/654, 257685-691, 257/E21.181, 257/E25.024, 257/E20.027, 257/E29.066, 257/E29.214, 257/259
• US Class Current: 257/139
• CPC Class Codes: H01L 29/0692 Surface layout
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/7393 Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

In a base region of a first conductivity type, at least one emitter region of a second conductivity type and at least one sense region of the second conductivity type, spaced away from the emitter region, are selectively formed. The emitter region and the sense region are located so as to be aligned in a second direction perpendicular to a first direction going from a collector region of the first conductivity type, which is formed so as to be spaced away from the base region, toward the base region. The width of the sense region, the width of the emitter region, the width of a part of the base region that is adjacent to the sense region, and the width of a part of the base region that is adjacent to the emitter region in the second direction are set in such a manner that a sense ratio varies in a desired manner in accordance with variation in collector current.

Claims

1. A high-voltage semiconductor switching element comprising:

a base region of a first conductivity type formed in a semiconductor substrate of a second conductivity type;

at least one emitter region of the second conductivity type selectively formed in the base region;

at least one sense region of the second conductivity type selectively formed in the base region so as to be spaced away from the emitter region;

a collector region of the first conductivity type formed in the semiconductor substrate so as to be spaced away from the base region;

a gate insulating film formed at least on a part of the base region located closer to the collector region with respect to the emitter region;

a gate electrode formed on the gate insulating film;

a collector electrode formed above the semiconductor substrate and electrically connected with the collector region;

an emitter electrode formed above the semiconductor substrate and electrically connected with both the base region and the emitter region; and

a sense electrode formed above the semiconductor substrate and electrically connected with the sense region,

wherein the emitter region and the sense region are located so as to be aligned in a second direction perpendicular to a first direction going from the collector region toward the base region; and

the width of the sense region, the width of the emitter region, the width of a part of the base region that is adjacent to the sense region, and the width of a part of the base region that is adjacent to the emitter region in the second direction are set in such a manner that a sense ratio, which is a ratio of a collector current to a sense current, varies in a desired manner in accordance with variation in the collector current.

6. The high-voltage semiconductor switching element of claim 1, wherein a ratio of the width of the part of the base region that is adjacent to the sense region to the width of the sense region in the second direction is set equal to a ratio of the width of the part of the base region that is adjacent to the emitter region to the width of the emitter region in the second direction, thereby making the sense ratio be kept constant irrespective of the variation in the collector current.

8. The high-voltage semiconductor switching element of claim 6, wherein the width of the sense region, the width of the emitter region, the width of the part of the base region that is adjacent to the sense region, and the width of the part of the base region that is adjacent to the emitter region in the second direction are set equal to each other.

10. The high-voltage semiconductor switching element of claim 1, wherein a ratio of the width of the part of the base region that is adjacent to the sense region to the width of the sense region in the second direction is set greater than a ratio of the width of the part of the base region that is adjacent to the emitter region to the width of the emitter region in the second direction, thereby making the sense ratio increase as the collector current increases.

12. The high-voltage semiconductor switching element of claim 1, wherein a ratio of the width of the part of the base region that is adjacent to the sense region to the width of the sense region in the second direction is set smaller than a ratio of the width of the part of the base region that is adjacent to the emitter region to the width of the emitter region in the second direction, thereby making the sense ratio decrease as the collector current increases.

21. The high-voltage semiconductor switching element of claim 1, wherein a plurality of the sense regions are formed;

and

the emitter region is located between one of the sense regions and another one of the sense regions.

25. The high-voltage semiconductor switching element of claim 1, wherein the semiconductor substrate is of the first conductivity type;

the high-voltage semiconductor switching element further includes a resurf region of the second conductivity type formed in the semiconductor substrate so as to be adjacent to the base region; and

the collector region is formed in the resurf region.

29. The high-voltage semiconductor switching element of claim 25, further comprising a top semiconductor layer of the first conductivity type formed in a surface portion of the resurf region,

wherein the top semiconductor layer is electrically connected with the base region.

33. The high-voltage semiconductor switching element of claim 25, further comprising a buried semiconductor layer of the first conductivity type formed in the resurf region,

wherein the buried semiconductor layer is electrically connected with the base region.

2. A high-voltage semiconductor switching element comprising:

a base region of a first conductivity type formed in a semiconductor substrate of a second conductivity type;

at least one emitter region of the second conductivity type selectively formed in the base region;

at least one sense region of the second conductivity type selectively formed in the base region so as to be spaced away from the emitter region;

a collector region of the first conductivity type formed in the semiconductor substrate so as to be spaced away from the base region;

a drain region of the second conductivity type formed in the semiconductor substrate so as to be spaced away from the base region;

a gate insulating film formed at least on a part of the base region located closer to the collector region with respect to the emitter region;

a gate electrode formed on the gate insulating film;

a collector electrode formed above the semiconductor substrate and electrically connected with both the collector region and the drain region;

an emitter electrode formed above the semiconductor substrate and electrically connected with both the base region and the emitter region; and

a sense electrode formed above the semiconductor substrate and electrically connected with the sense region,

wherein the emitter region and the sense region are located so as to be aligned in a second direction perpendicular to a first direction going from the collector region toward the base region; and

the width of the sense region, the width of the emitter region, the width of a part of the base region that is adjacent to the sense region, and the width of a part of the base region that is adjacent to the emitter region in the second direction are set in such a manner that a ratio of a collector current to a sense current varies in a desired manner in accordance with variation in the collector current.

3. The high-voltage semiconductor switching element of claim 2, wherein the sense region and the collector region are located so as to face each other with the gate electrode interposed therebetween.

4. The high-voltage semiconductor switching element of claim 2, wherein the sense region and the drain region are located so as to face each other with the gate electrode interposed therebetween.

5. The high-voltage semiconductor switching element of claim 2, wherein a plurality of the sense regions are formed;

and

at least one of the sense regions and the collector region are located so as to face each other with the gate electrode interposed therebetween, and the other sense regions and the drain region are located so as to face each other with the gate electrode interposed therebetween.

7. The high-voltage semiconductor switching element of claim 2, wherein a ratio of the width of the part of the base region that is adjacent to the sense region to the width of the sense region in the second direction is set equal to a ratio of the width of the part of the base region that is adjacent to the emitter region to the width of the emitter region in the second direction, thereby making the sense ratio be kept constant irrespective of the variation in the collector current.

9. The high-voltage semiconductor switching element of claim 7, wherein the width of the sense region, the width of the emitter region, the width of the part of the base region that is adjacent to the sense region, and the width of the part of the base region that is adjacent to the emitter region in the second direction are set equal to each other.

11. The high-voltage semiconductor switching element of claim 2, wherein a ratio of the width of the part of the base region that is adjacent to the sense region to the width of the sense region in the second direction is set greater than a ratio of the width of the part of the base region that is adjacent to the emitter region to the width of the emitter region in the second direction, thereby making the sense ratio increase as the collector current increases.

13. The high-voltage semiconductor switching element of claim 2, wherein a ratio of the width of the part of the base region that is adjacent to the sense region to the width of the sense region in the second direction is set smaller than a ratio of the width of the part of the base region that is adjacent to the emitter region to the width of the emitter region in the second direction, thereby making the sense ratio decrease as the collector current increases.

22. The high-voltage semiconductor switching element of claim 2, wherein a plurality of the sense regions are formed;

and

the emitter region is located between one of the sense regions and another one of the sense regions.

26. The high-voltage semiconductor switching element of claim 2, wherein the semiconductor substrate is of the first conductivity type;

the high-voltage semiconductor switching element further includes a resurf region of the second conductivity type formed in the semiconductor substrate so as to be adjacent to the base region; and

the collector region is formed in the resurf region.

30. The high-voltage semiconductor switching element of claim 26, further comprising a top semiconductor layer of the first conductivity type formed in a surface portion of the resurf region,

wherein the top semiconductor layer is electrically connected with the base region.

34. The high-voltage semiconductor switching element of claim 26, further comprising a buried semiconductor layer of the first conductivity type formed in the resurf region,

wherein the buried semiconductor layer is electrically connected with the base region.

14. A high-voltage semiconductor switching element comprising:

a base region of a first conductivity type formed in a semiconductor substrate of a second conductivity type;

at least one emitter region of the second conductivity type selectively formed in the base region;

at least one sense region of the second conductivity type selectively formed in the base region so as to be spaced away from the emitter region;

a collector region of the first conductivity type formed in the semiconductor substrate so as to be spaced away from the base region;

a gate insulating film formed at least on a part of the base region located closer to the collector region with respect to the emitter region;

a gate electrode formed on the gate insulating film;

a collector electrode formed above the semiconductor substrate and electrically connected with the collector region;

an emitter electrode formed above the semiconductor substrate and electrically connected with both the base region and the emitter region; and

a sense electrode formed above the semiconductor substrate and electrically connected with the sense region,

wherein the emitter region and the sense region are located so as to be aligned in a second direction perpendicular to a first direction going from the collector region toward the base region; and

the resistance of a part of the emitter region that is located between the emitter electrode and the gate electrode is equal to the resistance of a part of the sense region that is located between the sense electrode and the gate electrode.

19. The high-voltage semiconductor switching element of claim 14, wherein the width of the emitter region and the width of the sense region in the second direction are equal to each other, and the length of the part of the emitter region that is located between the emitter electrode and the gate electrode is equal to the length of the part of the sense region that is located between the sense electrode and the gate electrode.

23. The high-voltage semiconductor switching element of claim 14, wherein a plurality of the sense regions are formed;

and

the emitter region is located between one of the sense regions and another one of the sense regions.

27. The high-voltage semiconductor switching element of claim 14, wherein the semiconductor substrate is of the first conductivity type;

the high-voltage semiconductor switching element further includes a resurf region of the second conductivity type formed in the semiconductor substrate so as to be adjacent to the base region; and

the collector region is formed in the resurf region.

31. The high-voltage semiconductor switching element of claim 27, further comprising a top semiconductor layer of the first conductivity type formed in a surface portion of the resurf region,

wherein the top semiconductor layer is electrically connected with the base region.

35. The high-voltage semiconductor switching element of claim 27, further comprising a buried semiconductor layer of the first conductivity type formed in the resurf region,

wherein the buried semiconductor layer is electrically connected with the base region.

15. A high-voltage semiconductor switching element comprising:

a base region of a first conductivity type formed in a semiconductor substrate of a second conductivity type;

at least one emitter region of the second conductivity type selectively formed in the base region;

at least one sense region of the second conductivity type selectively formed in the base region so as to be spaced away from the emitter region;

a collector region of the first conductivity type formed in the semiconductor substrate so as to be spaced away from the base region;

a drain region of the second conductivity type formed in the semiconductor substrate so as to be spaced away from the base region;

a gate insulating film formed at least on a part of the base region located closer to the collector region with respect to the emitter region;

a gate electrode formed on the gate insulating film;

a collector electrode formed above the semiconductor substrate and electrically connected with both the collector region and the drain region;

an emitter electrode formed above the semiconductor substrate and electrically connected with both the base region and the emitter region; and

a sense electrode formed above the semiconductor substrate and electrically connected with the sense region,

wherein the emitter region and the sense region are located so as to be aligned in a second direction perpendicular to a first direction going from the collector region toward the base region; and

the resistance of a part of the emitter region that is located between the emitter electrode and the gate electrode is equal to the resistance of a part of the sense region that is located between the sense electrode and the gate electrode.

16. The high-voltage semiconductor switching element of claim 15, wherein the sense region and the collector region are located so as to face each other with the gate electrode interposed therebetween.

17. The high-voltage semiconductor switching element of claim 15, wherein the sense region and the drain region are located so as to face each other with the gate electrode interposed therebetween.

18. The high-voltage semiconductor switching element of claim 15, wherein a plurality of the sense regions are formed;

and

at least one of the sense regions and the collector region are located so as to face each other with the gate electrode interposed therebetween, and the other sense regions and the drain region are located so as to face each other with the gate electrode interposed therebetween.

20. The high-voltage semiconductor switching element of claim 15, wherein the width of the emitter region and the width of the sense region in the second direction are equal to each other, and the length of the part of the emitter region that is located between the emitter electrode and the gate electrode is equal to the length of the part of the sense region that is located between the sense electrode and the gate electrode.

24. The high-voltage semiconductor switching element of claim 15, wherein a plurality of the sense regions are formed;

and

the emitter region is located between one of the sense regions and another one of the sense regions.

28. The high-voltage semiconductor switching element of claim 15, wherein the semiconductor substrate is of the first conductivity type;

the high-voltage semiconductor switching element further includes a resurf region of the second conductivity type formed in the semiconductor substrate so as to be adjacent to the base region; and

the collector region is formed in the resurf region.

32. The high-voltage semiconductor switching element of claim 28, further comprising a top semiconductor layer of the first conductivity type formed in a surface portion of the resurf region,

wherein the top semiconductor layer is electrically connected with the base region.

36. The high-voltage semiconductor switching element of claim 28, further comprising a buried semiconductor layer of the first conductivity type formed in the resurf region,

wherein the buried semiconductor layer is electrically connected with the base region.