Transceiver circuit for film bulk acoustic resonator (FBAR) transducers
First Claim
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1. A piezoelectric transducer device, comprising:
- a receive signal path;
a transistor;
a piezoelectric transducer connected to a first terminal of the transistor;
a switch connected to a second terminal of the transistor, wherein the switch is adapted to selectively connect the second terminal of the transistor to a transmit signal or to a bias voltage; and
an output connected to a third terminal of the transistor, and adapted to receive a signal from the transducer when the switch is connected to the bias voltage, wherein the switch is not in the receive signal path.
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Abstract
A piezoelectric transducer device includes a receive signal path, a transistor and a piezoelectric transducer connected to a first terminal of the transistor. The device also includes a switch connected to a second terminal of the transistor, wherein the switch is adapted to selectively connect the second terminal of the transistor to a transmit signal or to a bias voltage; an output connected to a third terminal of the transistor, and adapted to receive a signal from the transducer when the switch is connected to the bias voltage, wherein the switch is not in the receive signal.
366 Citations
11 Claims
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1. A piezoelectric transducer device, comprising:
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a receive signal path; a transistor; a piezoelectric transducer connected to a first terminal of the transistor; a switch connected to a second terminal of the transistor, wherein the switch is adapted to selectively connect the second terminal of the transistor to a transmit signal or to a bias voltage; and an output connected to a third terminal of the transistor, and adapted to receive a signal from the transducer when the switch is connected to the bias voltage, wherein the switch is not in the receive signal path.
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2. A transducer device as claimed in claim 1, wherein the transistor is a field effect transistor (FET), the first terminal is a source, the second terminal is a gate and the third terminal is a drain.
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3. A transducer device as claimed in claim 2, wherein the transistor is a metal oxide semiconductor field effect transistor (MOSFET).
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4. A transducer device as claimed in claim 1, wherein the transistor is a bipolar transistor.
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5. A transducer device as claimed in claim 1, wherein the switch is one of:
- an optocoupler;
a field effect transistor;
or an electromechanical switch.
- an optocoupler;
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6. A transducer device as claimed in claim 1, wherein the piezoelectric transducer is a film bulk acoustic resonator (FBAR) transducer.
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7. A sensor, comprising:
piezoelectric transducer device, comprising;
a transistor;
a piezoelectric transducer connected to a first terminal of the transistor;
a switch connected to a second terminal of the transistor, wherein the switch is adapted to selectively connect the second terminal of the transistor to a transmit signal or to a bias voltage; and
an output connected to a third terminal of the transistor, and adapted to receive a signal from the transducer when the switch is connected to the bias voltage.
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8. A sensor as claimed in claim 7, wherein the transistor is a field effect transistor (FET), the first terminal is a source, the second terminal is a gate and the third terminal is a drain.
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9. A sensor as claimed in claim 8, wherein the transistor is a metal oxide semiconductor field effect transistor (MOSFET).
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10. A sensor as claimed in claim 7, wherein the transistor is a bipolar transistor.
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11. A sensor as claimed in claim 7, wherein the switch is one of:
- an optocoupler;
a field effect transistor;
or an electromechanical switch.
- an optocoupler;
Specification