Method of fabricating active layer of thin film transistor

• US 7,745,267 B2
• Filed: 12/22/2006
• Issued: 06/29/2010
• Est. Priority Date: 09/04/2006
• Status: Active Grant

• Current Assignee: AU Optronics Corporation, Chunghwa Picture Tubes Limited, HannStar Display Corporation, Industrial Technology Research Institute, Chi Mei Optoelectronics (InnoLux Corporation), TPO Displays Corporation (InnoLux Corporation), Taiwan TFT LCD Association
• Original Assignee: AU Optronics Corporation, Chunghwa Picture Tubes Limited, HannStar Display Corporation, Industrial Technology Research Institute, Chi Mei Optoelectronics (InnoLux Corporation), TPO Displays Corporation (InnoLux Corporation), Taiwan TFT LCD Association
• Inventors: Cheng, Hsiang-Yuan, Yu, Chin-Chih, Chiang, Shin-Chuan, Chuang, Bor-Chuan, Lai, Shih-Hsiang
• Primary Examiner(s): NGUYEN, THANH T
• Application Number:
  US11/614,977
• Publication Number:
  US 20080057631A1
• Time in Patent Office: 1,285 Days
• Field of Search: 438149-151, 438/785, 257/E29.151
• US Class Current: 438/149
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 29/78681 having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.

Claims

1. A method of fabricating an active layer of a thin film transistor, comprising:

providing a substrate;

preparing a semiconductor precursor solution using a liquid process;

applying the semiconductor precursor solution on the substrate to form a semiconductor precursor thin film; and

irradiating a portion of the semiconductor precursor thin film with a light source to remove residual solvent in the semiconductor precursor thin film and transform the portion of the semiconductor precursor thin film into an active semiconductor layer having semiconductor property, wherein the semiconductor precursor thin film which is not irradiated by the light source is remained on the substrate.

2. The method as claimed in claim 1, wherein the light source has a wavelength between 5 nm and 750 nm and an energy between 0.01 mj/cm² and 1200 mj/cm².

3. The method as claimed in claim 1, wherein the liquid process comprises sol-gel, chemical bath deposition, photo-chemical deposition, or evenly distributing semiconductor nano particles into solvent.

4. The method as claimed in claim 1, wherein the step of applying the semiconductor precursor thin film comprises spin-coating, inkjet printing, drop-printing, casting, micro-contact, micro-stamp, or dipping.

5. The method as claimed in claim 1, further comprising a step of performing a soft baking before irradiating the semiconductor precursor thin film with the light source.

6. The method as claimed in claim 1, further comprising a step of removing the semiconductor precursor thin film not irradiated by the light source after forming the semiconductor active layer.

7. The method as claimed in claim 1, further comprising a step of providing a mask after forming the semiconductor precursor thin film to serve as a mask when irradiating the semiconductor precursor thin film with the light source.

8. The method as claimed in claim 1, wherein the semiconductor precursor thin film comprises an II-VI compound semiconductor precursor.

9. The method as claimed in claim 8, wherein the II-VI compound semiconductor precursor comprises ZnO.

10. The manufacturing method as claimed in claim 1, wherein the substrate comprises Si wafer, glass substrate, ceramic substrate, metal substrate, paper substrate, or plastic substrate.