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Semiconductor device and driving method thereof

  • US 7,751,498 B2
  • Filed: 02/21/2006
  • Issued: 07/06/2010
  • Est. Priority Date: 02/28/2005
  • Status: Active Grant
First Claim
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1. A semiconductor device driven by a power source providing a power source voltage and a ground voltage, the semiconductor device comprising:

  • a resonant circuit;

    a demodulation circuit for demodulating an alternating signal generated at the resonant circuit and generating a first demodulation signal; and

    a correction circuit for correcting and amplifying the first demodulation signal and generating a second demodulation signal,wherein the first demodulation signal as a digital signal has a Low level potential and a High level potential,wherein the correction circuit corrects the first demodulation signal when the High level potential of the first demodulation signal becomes lower than the power source voltage or when the Low level potential of the first demodulation signal does not become as low as the ground voltage, andwherein an amplitude of the second demodulation signal is equal to an amplitude of the power source voltage.

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