Infrared sensor IC, and infrared sensor and manufacturing method thereof

• US 7,768,048 B2
• Filed: 09/09/2004
• Issued: 08/03/2010
• Est. Priority Date: 09/09/2003
• Status: Active Grant

• Current Assignee: Asahi Kasei Corporation
• Original Assignee: Asahi Kasei Corporation
• Inventors: Kuze, Naohiro, Ueno, Koichiro, Nagase, Kazuhiro, Moriyasu, Yoshitaka
• Primary Examiner(s): Smith; Zandra
• Assistant Examiner(s): Green; Telly D
• Application Number:
  US10/571,287
• Publication Number:
  US 20070090337A1
• Time in Patent Office: 2,154 Days
• Field of Search: 257/186, 257/291, 257/293, 257/369, 257/437, 257/441, 257/458, 257/466
• US Class Current: 257/293
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G01J 1/02 Details
• CPC Class Codes: G01J 1/0204 Compact construction
• CPC Class Codes: G01J 2001/0276 Protection
• CPC Class Codes: G01J 5/02 Constructional details
• CPC Class Codes: G01J 5/0215 Compact construction
• CPC Class Codes: G01J 5/04 Casings
• CPC Class Codes: G01J 5/045 Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements getter arrangements per se H01L23/26 and H01L21/3221
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48145 the bodies being stacked
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H01L 31/035236 Superlattices; Multiple quantum well structures
• CPC Class Codes: H01L 31/1035 the devices comprising active layers formed only by AIIIBV compounds

Abstract

An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.

Claims

1. An infrared sensor comprising:

a substrate; and

a compound semiconductor stacked layers formed on said substrate by stacking a plurality of compound semiconductor layers, said compound semiconductor stacked layers comprising;

an n-type doped compound semiconductor layer formed on said substrate, said n-type doped compound semiconductor layer composed of an n-type doped material and including indium and antimony;

a compound semiconductor light absorption layer formed on said n-type doped compound semiconductor layer, said compound semiconductor light absorption layer composed of a non-doped or p-type doped material including indium and antimony; and

a p-type doped compound semiconductor layer formed on said compound semiconductor light absorption layer, said p-type doped compound semiconductor layer composed of a material that is p-type doped at a higher carrier density than said compound semiconductor light absorption layer and has a larger band gap than said n-type doped compound semiconductor layer and said compound semiconductor light absorption layer, wherein said p-type doped compound semiconductor layer functions as a barrier layer.

2. The infrared sensor according to claim 1, wherein said n-type doped compound semiconductor layer is InSb, said compound semiconductor light absorption layer is one of InSb, InAsSb and InSbN, and said p-type doped compound semiconductor layer is either AlInSb or GaInSb, or one of AlAs, InAs, GaAs, AlSb and GaSb, or a mixed crystal of those.

3. The infrared sensor according to claim 2, wherein an n-type dopant for said n-type doped compound semiconductor layer is doped with Sn, and said compound semiconductor light absorption layer and said p-type doped compound semiconductor layer are doped with Zn.

4. The infrared sensor according to any of claims 1 to 3, further comprising:

a compound semiconductor contact layer formed on said p-type doped compound semiconductor layer, said compound semiconductor contact layer composed of a material including indium and antimony and p-type doped at a carrier concentration equal to or greater than the carrier concentration of said p-type doped compound semiconductor layer.

5. The infrared sensor according to claim 4, wherein said compound semiconductor contact layer is InSb.

6. The infrared sensor according to claim 5, wherein said compound semiconductor contact layer is doped with Zn.

7. The infrared sensor according to any of claims 1 to 3, wherein said substrate is a semi-insulating substrate, or a substrate such that said n-type doped compound semiconductor layer formed on said substrate can be insulated from said substrate, the infrared sensor further comprising:

a first electrode that is formed in an area of said n-type doped compound semiconductor layer where said semiconductor light absorption layer is not formed; and

a second electrode that is formed in an area on said p-type doped compound semiconductor layer.

8. The infrared sensor according to claim 7, wherein a plurality of said compound semiconductor stacked layers are contiguously formed on said substrate, so that a first electrode, formed on a compound semiconductor stacked layers, is connected in series to a second electrode, formed on a compound semiconductor stacked layers adjacent to said compound semiconductor stacked layers on which said first electrode is formed.

9. The infrared sensor according to claim 7, wherein, when an output signal is measured, a bias between said first and said second electrodes is set to zero, and a signal when an infrared radiation enters is read as an open circuit voltage.

10. An infrared sensor IC comprising:

an infrared sensor according to claims 1 to 3; and

an integrated circuit processing said electric signal output by said infrared sensor to perform a predetermined operation, wherein said infrared sensor and said integrated circuit are arranged in a single package in a hybrid manner.

11. The infrared sensor according to claim 8, wherein, when an output signal is measured, a bias between said first and said second electrodes is set to zero, and a signal when an infrared radiation enters is read as an open circuit voltage.

12. The infrared sensor according to claim 4, wherein said substrate is a semi-insulating substrate, or a substrate such that said n-type doped compound semiconductor layer formed on said substrate can be insulated from said substrate, the infrared sensor further comprising:

a first electrode that is formed in an area of said n-type doped compound semiconductor layer where said semiconductor light absorption layer is not formed; and

a second electrode that is formed in an area on said p-type doped compound semiconductor layer.

13. The infrared sensor according to claim 12, wherein a plurality of said compound semiconductor stacked layers are contiguously formed on said substrate, so that a first electrode, formed on a compound semiconductor stacked layers, is connected in series to a second electrode, formed on a compound semiconductor stacked layers adjacent to said compound semiconductor stacked layers on which said first electrode is formed.

14. The infrared sensor according to claim 12, wherein, when an output signal is measured, a bias between said first and said second electrodes is set to zero, and a signal when an infrared radiation enters is read as an open circuit voltage.

15. The infrared sensor according to claim 13, wherein, when an output signal is measured, a bias between said first and said second electrodes is set to zero, and a signal when an infrared radiation enters is read as an open circuit voltage.

16. The infrared sensor according to claim 5, wherein said substrate is a semi-insulating substrate, or a substrate such that said n-type doped compound semiconductor layer formed on said substrate can be insulated from said substrate, the infrared sensor further comprising:

a first electrode that is formed in an area of said n-type doped compound semiconductor layer where said semiconductor light absorption layer is not formed; and

a second electrode that is formed in an area on said p-type doped compound semiconductor layer.

17. The infrared sensor according to claim 16, wherein a plurality of said compound semiconductor stacked layers are contiguously formed on said substrate, so that a first electrode, formed on a compound semiconductor stacked layers, is connected in series to a second electrode, formed on a compound semiconductor stacked layers adjacent to said compound semiconductor stacked layers on which said first electrode is formed.

18. The infrared sensor according to claim 16, wherein, when an output signal is measured, a bias between said first and said second electrodes is set to zero, and a signal when an infrared radiation enters is read as an open circuit voltage.

19. The infrared sensor according to claim 17, wherein, when an output signal is measured, a bias between said first and said second electrodes is set to zero, and a signal when an infrared radiation enters is read as an open circuit voltage.

20. The infrared sensor according to claim 6, wherein said substrate is a semi-insulating substrate, or a substrate such that said n-type doped compound semiconductor layer formed on said substrate can be insulated from said substrate, the infrared sensor further comprising:

a first electrode that is formed in an area of said n-type doped compound semiconductor layer where said semiconductor light absorption layer is not formed; and

a second electrode that is formed in an area on said p-type doped compound semiconductor layer.

21. The infrared sensor according to claim 20, wherein a plurality of said compound semiconductor stacked layers are contiguously formed on said substrate, so that a first electrode, formed on a compound semiconductor stacked layers, is connected in series to a second electrode, formed on a compound semiconductor stacked layers adjacent to said compound semiconductor stacked layers on which said first electrode is formed.

22. The infrared sensor according to claim 20, wherein, when an output signal is measured, a bias between said first and said second electrodes is set to zero, and a signal when an infrared radiation enters is read as an open circuit voltage.

23. The infrared sensor according to claim 21, wherein, when an output signal is measured, a bias between said first and said second electrodes is set to zero, and a signal when an infrared radiation enters is read as an open circuit voltage.

24. An infrared sensor IC comprising:

an infrared sensor according to claim 4; and

an integrated circuit processing said electric signal output by said infrared sensor to perform a predetermined operation, wherein said infrared sensor and said integrated circuit are arranged in a single package in a hybrid manner.

25. An infrared sensor IC comprising:

an infrared sensor according to claim 5; and

an integrated circuit processing said electric signal output by said infrared sensor to perform a predetermined operation, wherein said infrared sensor and said integrated circuit are arranged in a single package in a hybrid manner.

26. An infrared sensor IC comprising:

an infrared sensor according to claim 6; and

an integrated circuit processing said electric signal output by said infrared sensor to perform a predetermined operation, wherein said infrared sensor and said integrated circuit are arranged in a single package in a hybrid manner.

27. An infrared sensor IC comprising:

an infrared sensor according to claim 12; and

an integrated circuit processing said electric signal output by said infrared sensor to perform a predetermined operation, wherein said infrared sensor and said integrated circuit are arranged in a single package in a hybrid manner.

28. An infrared sensor IC comprising:

an infrared sensor according to claim 13; and

an integrated circuit processing said electric signal output by said infrared sensor to perform a predetermined operation, wherein said infrared sensor and said integrated circuit are arranged in a single package in a hybrid manner.

29. An infrared sensor IC comprising:

an infrared sensor according to claim 14; and

an integrated circuit processing said electric signal output by said infrared sensor to perform a predetermined operation, wherein said infrared sensor and said integrated circuit are arranged in a single package in a hybrid manner.

30. An infrared sensor IC comprising:

an infrared sensor according to claim 15; and

an integrated circuit processing said electric signal output by said infrared sensor to perform a predetermined operation, wherein said infrared sensor and said integrated circuit are arranged in a single package in a hybrid manner.

31. An infrared sensor IC comprising:

an infrared sensor according to claim 16; and

an integrated circuit processing said electric signal output by said infrared sensor to perform a predetermined operation, wherein said infrared sensor and said integrated circuit are arranged in a single package in a hybrid manner.

32. An infrared sensor IC comprising:

an infrared sensor according to claim 17; and

an integrated circuit processing said electric signal output by said infrared sensor to perform a predetermined operation, wherein said infrared sensor and said integrated circuit are arranged in a single package in a hybrid manner.

33. An infrared sensor IC comprising:

an infrared sensor according to claim 18; and

an integrated circuit processing said electric signal output by said infrared sensor to perform a predetermined operation, wherein said infrared sensor and said integrated circuit are arranged in a single package in a hybrid manner.

34. An infrared sensor IC comprising:

an infrared sensor according to claim 19; and

an integrated circuit processing said electric signal output by said infrared sensor to perform a predetermined operation, wherein said infrared sensor and said integrated circuit are arranged in a single package in a hybrid manner.

35. An infrared sensor IC comprising:

an infrared sensor according to claim 20; and

an integrated circuit processing said electric signal output by said infrared sensor to perform a predetermined operation, wherein said infrared sensor and said integrated circuit are arranged in a single package in a hybrid manner.

36. An infrared sensor IC comprising:

an infrared sensor according to claim 21; and

an integrated circuit processing said electric signal output by said infrared sensor to perform a predetermined operation, wherein said infrared sensor and said integrated circuit are arranged in a single package in a hybrid manner.

37. An infrared sensor IC comprising:

an infrared sensor according to claim 22; and

an integrated circuit processing said electric signal output by said infrared sensor to perform a predetermined operation, wherein said infrared sensor and said integrated circuit are arranged in a single package in a hybrid manner.

38. An infrared sensor IC comprising:

an infrared sensor according to claim 23; and

an Integrated circuit processing said electric signal output by said infrared sensor to perform a predetermined operation, wherein said infrared sensor and said integrated circuit are arranged in a single package In a hybrid manner.