Semiconductor device
First Claim
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1. A method of forming a channel, comprising:
- providing at least one precursor composition including one or more precursor compounds that include a compound AxBx, wherein each A is selected from the group of Cu, Ag, each B is selected from the group Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, each x is independently a non-zero integer, and wherein each of A and B are different; and
depositing the channel including the precursor composition to form a multi-cation oxide from the precursor composition to electrically couple a drain electrode and a source electrode.
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Abstract
An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.
23 Citations
16 Claims
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1. A method of forming a channel, comprising:
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providing at least one precursor composition including one or more precursor compounds that include a compound AxBx, wherein each A is selected from the group of Cu, Ag, each B is selected from the group Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, each x is independently a non-zero integer, and wherein each of A and B are different; and depositing the channel including the precursor composition to form a multi-cation oxide from the precursor composition to electrically couple a drain electrode and a source electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of manufacturing a semiconductor device, comprising:
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providing a drain electrode; providing a source electrode; providing a precursor composition including one or more precursor compounds that include a compound AxBx, wherein each A is selected from the group of Cu, Ag, Sb each B is selected from the group Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, each x is independently a non-zero integer, and wherein each of A and B are different; depositing a channel including depositing the precursor composition to form a multi-cation oxide from the precursor composition to electrically couple the drain electrode and the source electrode; providing a gate electrode; and providing a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification