Semiconductor display devices

• US 7,776,663 B2
• Filed: 03/28/2008
• Issued: 08/17/2010
• Est. Priority Date: 03/18/1995
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Nakajima, Setsuo, Arai, Yasuyuki, Yamazaki, Shunpei
• Primary Examiner(s): LEBENTRITT, MICHAEL
• Application Number:
  US12/057,994
• Publication Number:
  US 20080188022A1
• Time in Patent Office: 872 Days
• Field of Search: 438/30, 438149-151, 438/154, 438164-166, 257/E51.006
• US Class Current: 438/149
• CPC Class Codes: G02F 1/133305 Flexible substrates, e.g. plastics, organic film
• CPC Class Codes: G02F 1/13452 Conductors connecting driver circuitry and terminals of panels
• CPC Class Codes: G02F 1/13613 the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2224/24051 Conformal with the semiconductor or solid-state device
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/24998 Reinforcing structures, e.g. ramp-like support
• CPC Class Codes: H01L 2224/82007 involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting a build-up interconnect during or after the bonding process
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01011 Sodium [Na]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/07811 : Extrinsic, i.e. with electrical conductive fillers
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides

Abstract

In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface of the first substrate that the electrical wirings are formed is opposite to the transparent conductive film on the second substrate. the semiconductor integrated circuit has substantially the same length as one side of a display screen (i.e., a matrix circuit) of the display device and is obtained by peeling it from another substrate and then forming it on the first substrate. Also, in a liquid crystal display device, a first substrate includes a matrix circuit and a peripheral driver circuit, and a second substrate is opposite to the first substrate, includes a matrix circuit and a peripheral driver circuit and has at least a size corresponding to the matrix circuit and the peripheral driver circuit. Spacers is provided between the first and second substrates. A seal material is formed outside the matrix circuits and the peripheral driver circuits in the first and second substrates. A liquid crystal material is filled inside a region enclosed by the seal material. A protective film is formed on the peripheral driver circuit has substantially a thickness equivalent to an interval between the substrates which is formed by the spacers.

Claims

1. A method of manufacturing a semiconductor device comprising:

forming a peeling layer over a first substrate;

forming a base film over the peeling layer;

forming a semiconductor device including a thin film transistor over the base film, wherein the thin film transistor comprises a semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

forming a passivation film over the thin film transistor;

sticking a second substrate over the passivation film;

separating the semiconductor device from the first substrate after sticking the second substrate; and

fixing the semiconductor device to a third substrate with a resin layer interposed therebetween after the separating step.

2. The method according to claim 1, wherein the base film comprises silicon oxide.

3. The method according to claim 1, wherein the second substrate is a glass substrate.

4. The method according to claim 1, wherein the second substrate is a plastic substrate.

5. The method according to claim 1, wherein the third substrate is a glass substrate.

6. The method according to claim 1, wherein the third substrate is a plastic substrate.

7. The method according to claim 1, further comprising a step of removing the second substrate after the fixing step.

8. The method according to claim 1, wherein the passivation film comprises polyimide.

9. A method of manufacturing a semiconductor device comprising:

forming a peeling layer comprising silicon over a first substrate;

forming a base film over the peeling layer;

forming a semiconductor device including a thin film transistor over the base film, wherein the thin film transistor comprises a semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

forming a passivation film over the thin film transistor;

sticking a second substrate over the passivation film;

separating the semiconductor device from the first substrate after sticking the second substrate; and

fixing the semiconductor device to a third substrate with a resin layer interposed therebetween after the separating step.

10. The method according to claim 9, wherein the base film comprises silicon oxide.

11. The method according to claim 9, wherein the second substrate is a glass substrate.

12. The method according to claim 9, wherein the second substrate is a plastic substrate.

13. The method according to claim 9, wherein the third substrate is a glass substrate.

14. The method according to claim 9, wherein the third substrate is a plastic substrate.

15. The method according to claim 9, further comprising a step of removing the second substrate after the fixing step.

16. The method according to claim 9, wherein the passivation film comprises polyimide.

17. A method of manufacturing a semiconductor device comprising:

forming a peeling layer over a first substrate;

forming a base film over the peeling layer;

forming a semiconductor device including a thin film transistor over the base film, wherein the thin film transistor comprises a semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

forming a passivation film over the thin film transistor;

sticking a second substrate over the passivation film;

separating the semiconductor device from the first substrate by using a fluorine halide after sticking the second substrate; and

fixing the semiconductor device to a third substrate with a resin layer interposed therebetween after the separating step.

18. The method according to claim 17, wherein the base film comprises silicon oxide.

19. The method according to claim 17, wherein the second substrate is a glass substrate.

20. The method according to claim 17, wherein the second substrate is a plastic substrate.

21. The method according to claim 17, wherein the third substrate is a glass substrate.

22. The method according to claim 17, wherein the third substrate is a plastic substrate.

23. The method according to claim 17, further comprising a step of removing the second substrate after the fixing step.

24. The method according to claim 17, wherein the passivation film comprises polyimide.

25. The method according to claim 17, wherein the fluorine halide is chlorine trifluoride (ClF₃).

26. A method of manufacturing a semiconductor device comprising:

forming a peeling layer comprising silicon over a first substrate;

forming a base film over the peeling layer;

forming a semiconductor device including a thin film transistor over the base film, wherein the thin film transistor comprises a semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

forming a passivation film over the thin film transistor;

sticking a second substrate over the passivation film;

separating the semiconductor device from the first substrate by using a fluorine halide after sticking the second substrate; and

fixing the semiconductor device to a third substrate with a resin layer interposed therebetween after the separating step.

27. The method according to claim 26, wherein the base film comprises silicon oxide.

28. The method according to claim 26, wherein the second substrate is a glass substrate.

29. The method according to claim 26, wherein the second substrate is a plastic substrate.

30. The method according to claim 26, wherein the third substrate is a glass substrate.

31. The method according to claim 26, wherein the third substrate is a plastic substrate.

32. The method according to claim 26, further comprising a step of removing the second substrate after the fixing step.

33. The method according to claim 26, wherein the passivation film comprises polyimide.

34. The method according to claim 26, wherein the fluorine halide is chlorine trifluoride (ClF₃).