Semiconductor light emitting element
First Claim
1. A semiconductor light emitting element comprising:
- a substrate; and
an n-type semiconductor layer, an active layer and a p-type semiconductor layer which are laminated on the substrate;
wherein the semiconductor light emitting element includes a side surface extending in a lamination direction and constituted by the substrate, the n-type semiconductor layer, the active layer and the p-type semiconductor layer, the side surface being formed with a plurality of projections except for the active layer, the plurality of projections being provided on the substrate, the n-type semiconductor layer and the p-type semiconductor layer,wherein, when a wavelength of light emitted from the active layer is expressed by λ and
index of refraction of either one of the n-type semiconductor layer and the p-type semiconductor layer is expressed by n, average WA of widths at bottoms of the projections satisfies;
WA≧
λ
/n.
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Accused Products
Abstract
In a semiconductor light emitting element, a p-type layer (220), an active layer (230) and an n-type layer (240) are laminated on a substrate in this order. The n-type layer (240) is formed with a rectangular n-side electrode (241) whose width in one direction is equal to that of the n-type layer (240). The thickness t of the n-type layer (240) satisfies Formula 1 below. The semiconductor light emitting element includes a side surface (270) extending in the lamination direction and formed with a plurality of projections (271). Supposing that the wavelength of the light from the active-layer (230) is λ and the index of refraction of the n-type layer (240) or the p-type layer (220) is n, the average WA of widths at bottoms of the projections is set to satisfy WA≧λ/n.
-
- where
- L is width of the n-type layer in a direction different from the one direction,
- T is absolute temperature,
- W is width of the n-side electrode in a direction different from the one direction,
- J0 is current density at the contact portion between the n-side electrode and the n-type layer,
- e is elementary charge,
- γ is diode ideality factor,
- κB is Boltzmann constant,
- ρ is specific resistance of the n-type semiconductor layer.
24 Citations
6 Claims
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1. A semiconductor light emitting element comprising:
-
a substrate; and an n-type semiconductor layer, an active layer and a p-type semiconductor layer which are laminated on the substrate; wherein the semiconductor light emitting element includes a side surface extending in a lamination direction and constituted by the substrate, the n-type semiconductor layer, the active layer and the p-type semiconductor layer, the side surface being formed with a plurality of projections except for the active layer, the plurality of projections being provided on the substrate, the n-type semiconductor layer and the p-type semiconductor layer, wherein, when a wavelength of light emitted from the active layer is expressed by λ and
index of refraction of either one of the n-type semiconductor layer and the p-type semiconductor layer is expressed by n, average WA of widths at bottoms of the projections satisfies;
WA≧
λ
/n. - View Dependent Claims (2, 3, 4, 5, 6)
-
Specification