Inductor of semiconductor device and method for manufacturing the same
First Claim
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1. An apparatus comprising:
- a semiconductor substrate formed with a sub-structure;
at least one metal line layer formed over the semiconductor substrate, the at least one metal layer including a lower metal line layer formed over the semiconductor layer and an upper metal line layer formed over the lower metal line layer;
at least one inductor line layer formed over the metal line layer; and
a space layer formed between the inductor line layer and the semiconductor substrate,wherein the lower metal line layer includes a lower insulating film formed over an entire upper surface of the semiconductor substrate, a lower hole formed on a first side of the lower insulating film, a lower photoresist layer formed in the lower hole, a lower silylation film formed over the lower photoresist layer, a lower via hole formed on a second side of the lower insulating film, and a lower metal line buried in the lower via hole,wherein the upper metal line layer includes an upper insulating film formed over an entire upper surface of the lower insulating film including the lower silylation film and the lower metal line, an upper hole formed in a first side of the upper insulating film to expose the lower photoresist layer, an upper photoresist layer formed in the upper hole, an upper silylation film formed over the upper photoresist layer, an upper via hole formed in a second side of the upper insulating film, and an upper metal line buried in the upper via hole.
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Abstract
An inductor of a semiconductor device and a method for manufacturing the same are disclosed. The inductor has a spiral structure, and includes a semiconductor substrate formed with a sub-structure. At least one metal line layer may be formed over the semiconductor substrate. At least one inductor line layer may be formed over the metal line layer. A space layer may be formed between the inductor line layer and the semiconductor substrate.
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Citations
14 Claims
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1. An apparatus comprising:
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a semiconductor substrate formed with a sub-structure; at least one metal line layer formed over the semiconductor substrate, the at least one metal layer including a lower metal line layer formed over the semiconductor layer and an upper metal line layer formed over the lower metal line layer; at least one inductor line layer formed over the metal line layer; and a space layer formed between the inductor line layer and the semiconductor substrate, wherein the lower metal line layer includes a lower insulating film formed over an entire upper surface of the semiconductor substrate, a lower hole formed on a first side of the lower insulating film, a lower photoresist layer formed in the lower hole, a lower silylation film formed over the lower photoresist layer, a lower via hole formed on a second side of the lower insulating film, and a lower metal line buried in the lower via hole, wherein the upper metal line layer includes an upper insulating film formed over an entire upper surface of the lower insulating film including the lower silylation film and the lower metal line, an upper hole formed in a first side of the upper insulating film to expose the lower photoresist layer, an upper photoresist layer formed in the upper hole, an upper silylation film formed over the upper photoresist layer, an upper via hole formed in a second side of the upper insulating film, and an upper metal line buried in the upper via hole. - View Dependent Claims (2, 3)
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4. A method comprising:
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preparing a semiconductor substrate formed with an sub-structure; forming at least one metal line layer over the semiconductor substrate by forming a lower metal line layer over the semiconductor substrate and forming an upper metal line layer over the lower metal line layer; forming at least one inductor line layer over the metal line layer; and forming a space layer beneath the inductor metal line layer, wherein forming the lower metal line layer over the semiconductor substrate comprises forming a lower insulating film over an entire upper surface of the semiconductor substrate, patterning the lower insulating film on a first side of the lower insulating film, thereby forming a lower hole, forming a lower photoresist layer formed in the lower hole, silylating the lower photoresist layer, thereby forming a lower silylation film, patterning the lower insulating film on a second side of the lower insulating film, thereby forming a lower via hole, forming a lower metal layer over an entire upper surface of the lower insulating film including the lower via hole and the lower silylation film, and subjecting the lower metal layer to a chemical mechanical polishing process such that the lower silylation film is exposed, thereby forming a lower metal line. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12)
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13. An apparatus comprising:
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a semiconductor substrate formed with a sub-structure; a lower metal line layer formed over the semiconductor layer; an upper metal line layer formed over the lower metal line layer, the upper metal line layer comprising an upper insulating film formed over the lower metal line, an upper hole formed in a first side of the upper insulating film, an upper photoresist layer formed in the upper hole, an upper silylation film formed over the upper photoresist layer, an upper via hole formed in a second side of the upper insulating film, and an upper metal line buried in the upper via hole; at least one inductor line layer formed over the metal line layer; and a space layer formed between the inductor line layer and the semiconductor substrate. - View Dependent Claims (14)
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Specification