CMOS imager having a nitride dielectric

• US 7,791,116 B1
• Filed: 10/14/1998
• Issued: 09/07/2010
• Est. Priority Date: 10/14/1998
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Rhodes, Howard E.
• Primary Examiner(s): NGUYEN, CUONG QUANG
• Application Number:
  US09/172,298
• Time in Patent Office: 4,346 Days
• Field of Search: 257/239, 257288-294, 257/234, 257232-233, 257/E31.073, 257/E31.127, 257/E27.133
• US Class Current: 257/292
• CPC Class Codes: H01L 27/1461 characterised by the photosensitive area
• CPC Class Codes: H01L 27/1462 Coatings
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements

Abstract

An imaging device formed as a CMOS semiconductor integrated circuit includes a nitrogen containing insulating material beneath a photogate. The nitrogen containing insulating material, preferably be one of a silicon nitride layer, an ONO layer, a nitrode/oxide layer and an oxide/nitrode layer. The nitrogen containing insulating layer provides an increased capacitance in the photogate region, higher breakdown voltage, a wider dynamic range and an improved signal to noise ratio. The invention also provides a method for fabricating a CMOS imager containing the nitrogen containing insulating layer.

Claims

1. An imaging device comprising:

a substrate;

a photosensitive area within said substrate for accumulating photo-generated charge in said area;

a photogate for controlling the accumulation of photo-generated charge in said photosensitive area;

a first and a second gate stack;

a first insulating layer in contact with said substrate and beneath each of said first and second gate stacks; and

a nitrogen containing second insulating layer distinct from said first insulating layer such that none of said second insulating layer is located beneath either of said first or second gate stacks, said second insulating layer being in contact with said substrate and being located only in an area beneath said photogate.

2. The imaging device according to claim 1, wherein said photogate includes a doped polysilicon layer deposited over said second insulating layer.

3. The imaging device according to claim 1, wherein said photogate includes a transparent or semi-transparent conductor deposited over said second insulating layer.

4. The imaging device according to claim 3, wherein said transparent or semi-transparent conductor is selected from the group consisting of indium-tin-oxide, tin oxide, indium oxide and doped hydrogenated amorphous silicon.

5. The imaging device according to claim 1, wherein said nitrogen containing insulating layer is a silicon nitride layer.

6. The imaging device according to claim 1, wherein said nitrogen containing insulating layer is a nitrogen oxide containing layer.

7. The imaging device according to claim 6, wherein said nitrogen containing insulating layer is ONO.

8. The imaging device according to claim 6, wherein said nitrogen containing insulating layer is NO.

9. The imaging device according to claim 6, wherein said nitrogen containing insulating layer is ON.

10. The imaging device according to claim 2, wherein said nitrogen containing insulating layer is a silicon nitride layer.

11. The imaging device according to claim 2, wherein said nitrogen containing insulating layer is an ONO layer.

12. The imaging device according to claim 1, wherein said nitrogen containing layer has been removed wherever it is not covered by said photogate.

13. The imaging device according to claim 1, wherein said first insulating layer is a layer of silicon dioxide.

14. The imaging device according to claim 12, wherein said first insulating layer is a layer of silicon dioxide.

15. The imaging device according to claim 13, wherein each of said photogate and said nitrogen containing second insulating layer is only partially disposed over said first gate stack.

16. The imaging device according to claim 13, wherein said first gate stack is a transfer gate stack and said second gate stack is a reset gate stack.

17. The imaging device according to claim 16, wherein said nitrogen containing second insulating layer is disposed over a portion of said transfer gate stack.

18. An imaging device including a semiconductor integrated circuit substrate, said imaging device comprising:

a photosensitive device, including a photogate overlying said substrate, for accumulating photo-generated charge in a photosensitive area of said substrate;

a readout circuit comprising at least an output transistor formed in said substrate for reading out charge from a node which stores said photogenerated charge;

a reset transistor for periodically resetting said charge storage node to a predetermined voltage; and

a nitrogen containing insulating material in contact with said substrate and located only in the area beneath said photogate.

19. The imaging device according to claim 18, further comprising a charge transfer region for receiving charge from said photosensitive area having a control terminal, said transfer region being formed in said substrate adjacent said photosensitive area and having a node connected to a gate of said output transistor.

20. The imaging device according to claim 19, further comprising at least one charge transfer device for transferring charge from said photosensitive area to said node in accordance with a control signal applied to said control terminal.

21. The imaging device according to claim 18, wherein said nitrogen containing insulating material is a silicon nitride layer.

22. The imaging device according to claim 18, said nitrogen containing insulating material is a nitrogen oxide containing layer.

23. The imaging device according to claim 22, said nitrogen containing insulating material is an ONO layer.

24. The imaging device according to claim 22, said nitrogen containing insulating material is an NO layer.

25. The imaging device according to claim 22, said nitrogen containing insulating material is an ON layer.

26. The imaging device according to claim 18, wherein said photogate includes a doped polysilicon layer deposited over said insulating layer.

27. The imaging device according to claim 18, wherein said photogate includes a transparent or semi-transparent conductor deposited over said insulating layer.

28. The imaging device according to claim 27, wherein said transparent or semi-transparent conductor is selected from the group consisting of indium-tin-oxide, tin oxide, indium oxide and doped hydrogenated amorphous silicon.

29. The imaging device according to claim 18, wherein said nitrogen containing layer has been removed wherever it is not covered by said photogate.

30. The imaging device according to claim 18, further comprising a gate stack over said substrate, wherein said gate stack is disposed over an insulating layer of silicon dioxide which is over said substrate.

31. The imaging device according to claim 29, further comprising a gate stack over said substrate and beneath said insulating layer, wherein said gate stack is disposed over an insulating layer of silicon dioxide which is over said substrate.

32. The imaging device according to claim 30, wherein said photogate and said nitrogen containing insulating layer are only partially disposed over said gate stack.

33. The imaging device according to claim 30, wherein said gate stack comprises a transfer transistor gate stack.

34. The imaging device according to claim 33, wherein said nitrogen containing insulating layer is disposed over a portion of said transfer gate stack.

35. An imaging system comprising:

a plurality of active pixel sensors arranged in an array of rows and columns, each active pixel sensor being operable to generate a voltage at a diffusion node corresponding to detected light intensity by the sensor;

a photogate formed over a charge collection area in a substrate in said pixel sensor, wherein a nitrogen containing insulating layer is in contact with said substrate and located only in an area beneath said photogate;

a reset device to periodically reset the voltage of said diffusion node;

a row decoder having a plurality of control lines connected to the sensor array, each control line being connected to activate the sensors in a respective row; and

a plurality of output circuits, each output circuit being connected to the respective sensors in a column, operable to store voltage signals received from the sensors and to provide a sensor output signal.

36. The imaging system according to claim 35, further comprising a transfer transistor to transfer charge from said charge collection area to said diffusion node.

37. The imaging system according to claim 35, wherein said nitrogen containing insulating layer is a grown layer.

38. The imaging system according to claim 35, wherein said nitrogen containing insulating layer is a deposited layer.

39. The imaging system according to claim 35, wherein said nitrogen containing insulating layer is a silicon nitride layer.

40. The imaging system according to claim 35, wherein said nitrogen containing insulating layer is a nitrogen oxide containing layer.

41. The imaging system according to claim 40, wherein said nitrogen containing insulating layer is an ONO layer.

42. The imaging system according to claim 40, wherein said nitrogen containing insulating layer is an NO layer.

43. The imaging system according to claim 40, wherein said nitrogen containing insulating layer is an ON layer.

44. The imaging system according to claim 39, wherein said silicon nitride insulating layer is a chemical vapor deposition deposited layer.

45. The imaging system according to claim 35, wherein said nitrogen containing layer has been removed wherever it is not covered by said photogate.

46. The imaging system according to claim 35, further comprising a gate stack over said substrate, wherein said gate stack is disposed over an insulating layer of silicon dioxide disposed over said substrate.

47. The imaging system according to claim 45, further comprising a gate stack over said substrate and beneath said insulating layer, wherein said gate stack is disposed over an insulating layer of silicon dioxide disposed over said substrate.

48. The imaging system according to claim 46, wherein said photogate and said nitrogen containing insulating layer are only partially disposed over said gate stack.

49. The imaging system according to claim 46, wherein said gate stack comprises a transfer transistor gate stack.

50. The imaging system according to claim 49, wherein said nitrogen containing insulating layer is disposed over a portion of said transfer gate stack.

51. An imaging system comprising:

a plurality of active pixel sensors arranged in an array of rows and columns, each active pixel sensor being operable to generate a voltage at a floating diffusion node corresponding to detected light intensity by the sensor;

a photogate formed over a charge collection area in a substrate in said pixel sensor, wherein a nitrogen containing insulating layer is in contact with said substrate and located only in an area beneath said photogate;

a reset device to periodically reset the voltage of said diffusion node;

a row decoder having a plurality of control lines connected to the sensor array, each control line being connected to activate the sensors in a respective row; and

a plurality of output circuits, each output circuit being connected to the respective sensors in a column, operable to store voltage signals received from the sensors and to provide a sensor output signal.

52. The imaging system according to claim 51, wherein said nitrogen containing insulating layer is a grown layer.

53. The imaging system according to claim 51, wherein said nitrogen containing insulating layer is a deposited layer.

54. The imaging system according to claim 51, wherein said photogate includes a doped polysilicon layer deposited over said nitrogen containing insulating layer.

55. The imaging system according to claim 51, wherein said photogate includes a transparent or semi-transparent conductor deposited over said insulating layer.

56. The imaging system according to claim 55, wherein said transparent or semi-transparent conductor is selected from the group consisting of indium-tin-oxide, tin oxide, indium oxide and doped hydrogenated amorphous silicon.

57. The imaging system according to claim 51, wherein said nitrogen containing insulating layer is a silicon nitride layer.

58. The imaging system according to claim 51, wherein said nitrogen containing insulating layer is a nitrogen oxide containing layer.

59. The imaging system according to claim 58, wherein said nitrogen containing insulating layer is an ONO layer.

60. The imaging system according to claim 58, wherein said nitrogen containing insulating layer is an NO layer.

61. The imaging system according to claim 58, wherein said nitrogen containing insulating layer is an ON layer.

62. The imaging system according to claim 57, wherein said silicon nitride insulating layer is a chemical vapor deposition deposited layer.

63. The imaging system according to claim 59, wherein said ONO insulating layer is a chemical vapor deposition deposited layer.

64. The imaging system according to claim 51, wherein said nitrogen containing layer has been removed wherever it is not covered by said photogate.

65. The imaging system according to claim 51, further comprising a gate stack over said substrate, wherein said gate stack is disposed over an insulating layer of silicon dioxide disposed over said substrate.

66. The imaging system according to claim 64, further comprising a gate stack over said substrate and beneath said insulating layer, wherein said gate stack is disposed over an insulating layer of silicon dioxide disposed over said substrate.

67. The imaging system according to claim 65, wherein said photogate and said nitrogen containing insulating layer are only partially disposed over said gate stack.

68. The imaging system according to claim 65, wherein said gate stack comprises a transfer transistor gate stack.

69. The imaging system according to claim 68, wherein said nitrogen containing insulating layer is disposed over a portion of said transfer gate stack.

70. A system comprising:

(i) a processor for processing image data; and

(ii) a CMOS imaging device for providing image data to said processor and including;

a substrate;

a photosensitive area within said substrate for accumulating photo-generated charge in said area;

a photogate for controlling the accumulation of photo-generated charge in said photosensitive area; and

a nitrogen containing insulating layer in contact with said substrate and located in an area only beneath said photogate.

71. The imaging device according to claim 70, wherein said photogate includes a doped polysilicon deposited over said insulating layer.

72. The imaging device according to claim 70, wherein said photogate includes a transparent or semi-transparent conductor deposited over said insulating layer.

73. The imaging device according to claim 72, wherein said transparent or semi-transparent conductor is selected from the group consisting of indium-tin-oxide, tin oxide, indium oxide and doped hydrogenated amorphous silicon.

74. The imaging device according to claim 70, wherein said nitrogen containing insulating layer is a grown layer.

75. The imaging device according to claim 70, wherein said nitrogen containing insulating layer is a deposited layer.

76. The imaging device according to claim 70, wherein said nitrogen containing insulating layer is a silicon nitride layer.

77. The imaging device according to claim 70, said nitrogen containing insulating layer is a nitrogen oxide containing layer.

78. The imaging device according to claim 77, wherein said nitrogen containing insulating layer is ONO.

79. The imaging device according to claim 77, wherein said nitrogen containing insulating layer is NO.

80. The imaging device according to claim 77, wherein said nitrogen containing insulating layer is ON.

81. The imaging device according to claim 70, said nitrogen containing insulating layer is an ONO layer.

82. The imaging system according to claim 70, wherein said nitrogen containing layer has been removed wherever it is not covered by said photogate.

83. The imaging system according to claim 70, wherein said imaging device further comprises a gate stack over said substrate, wherein said gate stack is disposed over an insulating layer of silicon dioxide which is over said substrate.

84. The imaging system according to claim 82, wherein said imaging device further comprises a gate stack over said substrate and beneath said insulating layer, wherein said gate stack is disposed over an insulating layer of silicon dioxide which is over said substrate.

85. The imaging device according to claim 83, wherein said photogate and said nitrogen containing insulating layer are only partially disposed over said gate stack.

86. The imaging device according to claim 83, wherein said gate stack comprises a transfer transistor gate stack.

87. The imaging device according to claim 86, wherein said nitrogen containing insulating layer is disposed over a portion of said transfer gate stack.