Method of making a deep junction for electrical crosstalk reduction of an image sensor

  • US 7,791,170 B2
  • Filed: 07/10/2006
  • Issued: 09/07/2010
  • Est. Priority Date: 07/10/2006
  • Status: Active Grant
First Claim
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1. An image sensor semiconductor device, comprising:

  • a semiconductor substrate having a front surface and a back surface;

    a plurality of sensor elements formed on the front surface of the substrate, each of the plurality of sensor elements configured to receive light directed towards the back surface; and

    an aluminum doped feature formed in the substrate and extending from the back surface, but not extending to the front surface, the aluminum doped feature disposed horizontally between two adjacent elements of the plurality of sensor elements and vertically between the back surface and the plurality of sensor elements.

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