Semiconductor processing equipment having improved particle performance

• US 7,802,539 B2
• Filed: 04/12/2005
• Issued: 09/28/2010
• Est. Priority Date: 06/30/2000
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Bosch, William Frederick
• Primary Examiner(s): Zervigon; Rudy
• Application Number:
  US11/103,446
• Publication Number:
  US 20050181617A1
• Time in Patent Office: 1,995 Days
• Field of Search: 118/715, 118/728, 118/50, 118/723.E, 118/723.R, 427189-193, 427202-203, 156/345.33, 156/345.34, 156/345.43
• US Class Current: 118/723.00E
• CPC Class Codes: C04B 35/515 based on non-oxide ceramics
• CPC Class Codes: C04B 35/565 based on silicon carbide
• CPC Class Codes: C04B 41/0054 Plasma-treatment, e.g. with gas-discharge plasma
• CPC Class Codes: C04B 41/009 characterised by the material treated
• CPC Class Codes: C04B 41/53 involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete C04B41/0036 - C04B41/0054 take precedence
• CPC Class Codes: C04B 41/80 of only ceramics
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma

Abstract

A ceramic part having a surface exposed to the interior space, the surface having been shaped and plasma conditioned to reduce particles thereon by contacting the shaped surface with a high intensity plasma. The ceramic part can be made by sintering or machining a chemically deposited material. During processing of semiconductor substrates, particle contamination can be minimized by the ceramic part as a result of the plasma conditioning treatment. The ceramic part can be made of various materials such as alumina, silicon dioxide, quartz, carbon, silicon, silicon carbide, silicon nitride, boron nitride, boron carbide, aluminum nitride or titanium carbide. The ceramic part can be various parts of a vacuum processing chamber such as a liner within a sidewall of the processing chamber, a gas distribution plate supplying the process gas to the processing chamber, a baffle plate of a showerhead assembly, a wafer passage insert, a focus ring surrounding the substrate, an edge ring surrounding an electrode, a plasma screen and/or a window.

Claims

1. A ceramic part for a vacuum processing chamber for processing semiconductor substrates, the ceramic part comprising:

a non-oxide ceramic material having an as-machined or as-sintered outer surface; and

a silicon oxide layer on the outer surface of the non-oxide ceramic material and forming an outermost surface of the ceramic part, the silicon oxide layer having incorporated therein particles of the non-oxide ceramic material which are attached on the outer surface.

2. The ceramic part of claim 1, which is a gas distribution plate.

3. The ceramic part of claim 1, which is an electrode.

4. The ceramic part of claim 1, which is a baffle plate of a showerhead electrode assembly.

5. The ceramic part of claim 1, which is a chamber liner.

6. The ceramic part of claim 1, which is a plasma screen.

7. The ceramic part of claim 1, which is a focus ring or an edge ring.

8. The ceramic part of claim 1, which is a window.

9. The ceramic part of claim 1, wherein the silicon oxide layer has a thickness which is greater than the thickness of the particles.

24. The ceramic part of claim 1, wherein the silicon oxide layer is formed by subjecting the non-oxide ceramic material to a heat treatment in air to form the silicon oxide layer on the non-oxide ceramic material.

10. A ceramic part for a vacuum processing chamber for processing semiconductor substrates, the ceramic part comprising:

silicon or silicon carbide having an as-machined or as-sintered outer surface; and

a silicon oxide layer on the outer surface of the silicon or silicon carbide and forming an outermost surface of the ceramic part, the silicon oxide layer having incorporated therein particles of the silicon or silicon carbide which are attached on the outer surface.

11. The ceramic part of claim 10, wherein the non-oxide ceramic material is CVD SiC, sintered SiC, sintered SiC coated with CVD SiC, SiC formed by converting graphite using silicon vapor, or porous silicon carbide backfilled with silicon.

12. The ceramic part of claim 10, which is a gas distribution plate.

13. The ceramic part of claim 10, which is an electrode.

14. The ceramic part of claim 10, which is a baffle plate of a showerhead electrode assembly.

15. The ceramic part of claim 10, which is a chamber liner.

16. The ceramic part of claim 10, which is a plasma screen.

17. The ceramic part of claim 10, which is a focus ring or an edge ring.

18. The ceramic part of claim 10, which is a window.

19. The ceramic part of claim 10, wherein the silicon oxide layer has a thickness which is greater than the thickness of the particles.

20. A showerhead electrode for a vacuum processing chamber for processing semiconductor substrates, the showerhead electrode comprising:

silicon or silicon carbide having an as-machined or as-sintered outer surface; and

a silicon oxide layer on the outer surface of the silicon or silicon carbide and forming an outermost surface of the showerhead electrode, the silicon oxide layer having incorporated therein particles of the silicon or silicon carbide which are attached on the outer surface.

21. The showerhead electrode of claim 20, which is of SiC formed by converting graphite using silicon vapor.

22. The showerhead electrode of claim 20, which is of silicon.

23. The showerhead electrode of claim 20, wherein the silicon oxide layer has a thickness which is greater than the thickness of the particles.