CCD with improved charge transfer

• US 7,807,514 B2
• Filed: 04/26/2006
• Issued: 10/05/2010
• Est. Priority Date: 04/26/2006
• Status: Expired due to Fees

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Eastman Kodak Company
• Inventors: Parks, Christopher, McCarten, John P., Summa, Joseph R.
• Primary Examiner(s): Smith; Matthew
• Assistant Examiner(s): Jefferson; Quovaunda
• Application Number:
  US11/412,034
• Publication Number:
  US 20070254413A1
• Time in Patent Office: 1,623 Days
• Field of Search: 438/60, 438/75, 438/144, 438/146, 438/147, 438/549, 438/FOR.213, 257/E21.617, 257/E21.618, 257/E21.644
• US Class Current: 438/146
• CPC Class Codes: H01L 27/14831 Area CCD imagers
• CPC Class Codes: H01L 29/66946 Charge transfer devices
• CPC Class Codes: H01L 29/76833 Buried channel CCD

Abstract

A method of forming a charge-coupled device including the steps of forming well or substrate of a first conductivity type; a buried channel of a second conductivity type; a plurality of first gate electrodes; partially coating the first gate electrodes with a mask substantially aligned to an edge of the first gate electrodes; implanting ions of the first conductivity type of sufficient energy to penetrate the first gates and into the buried channel; and a plurality of second gate electrodes covering regions each over the buried channel between the first gate electrodes.

Claims

1. A method of forming a stepped channel potential in a charge-coupled device comprising:

(a) forming a well or a substrate of a first conductivity type;

(b) forming a buried channel of a second conductivity type;

(c) forming a plurality of first gate electrodes;

(d) partially coating the plurality of first gate electrodes with a mask substantially aligned to an edge of each first gate electrode;

(e) producing the stepped channel potential in the buried channel by implanting ions of the first conductivity type with sufficient energy to simultaneously penetrate into the buried channel between the plurality of first gate electrodes and penetrate through the uncoated portions of the plurality of first gate electrodes and into the buried channel; and

(f) forming a plurality of second gate electrodes covering regions of the buried channel between the plurality of first gate electrodes.

2. The method as in claim 1, further comprising prior to (f), producing a larger potential step in the stepped channel potential by implanting ions of the first conductivity type with sufficient energy to penetrate into the buried channel that is between the plurality of first gate electrodes but not penetrate the uncoated portions of the plurality of first gate electrodes.

3. The method as in claim 2, further comprising removing the mask after producing a larger potential step in the stepped channel potential and prior to (f).

4. The method as in claim 1, further comprising removing the mask prior to (f).

5. A method of forming a stepped channel potential in a charge coupled device comprising:

(a) forming a well or a substrate of a first conductivity type;

(b) forming a buried channel of a second conductivity type;

(c) forming a plurality of first gate electrodes;

(d) partially coating the plurality of first gate electrodes with a mask substantially aligned to an edge of each first gate electrode;

(e) producing the stepped channel potential in the buried channel by implanting ions of the first conductivity type with sufficient energy to simultaneously penetrate into the buried channel that is between the plurality of first gate electrodes and penetrate through the uncoated portions of the plurality of first gate electrodes and into the buried channel;

(f) producing a larger potential step in the stepped channel potential by implanting ions of the first conductivity type with sufficient energy to penetrate into the buried channel that is between the plurality of first gate electrodes but not penetrate the uncoated portions of the plurality of first gate electrodes; and

(g) forming a plurality of second gate electrodes covering regions of the buried channel between the first gate electrodes.

6. The method as in claim 5, further comprising removing the mask prior to (g).

7. A method of forming a camera comprising:

(a) providing a camera body;

(b) providing a charge-coupled device in the camera body, the method of providing the charge-coupled device comprising;

(i) forming a well or a substrate of a first conductivity type;

(ii) forming a buried channel of a second conductivity type;

(iii) forming a plurality of first gate electrodes;

(iv) partially coating the plurality of first gate electrodes with a mask substantially aligned to an edge of each first gate electrode;

(v) producing a stepped channel potential in the buried channel by implanting ions of the first conductivity type with sufficient energy to simultaneously penetrate into the buried channel between the plurality of first gate electrodes and penetrate through the uncoated portions of the first gate electrodes and into the buried channel; and

(vi) forming a plurality of second gate electrodes covering regions of the buried channel between the plurality of first gate electrodes.

8. The method as in claim 7, further comprising prior to (vi), producing a larger potential step in the stepped channel potential by implanting ions of the first conductivity type with sufficient energy to penetrate into the buried channel that is between the plurality of first gate electrodes but not penetrate the uncoated portions of the plurality of first gate electrodes.

9. The method as in claim 8, further comprising removing the mask after producing a larger potential step in the stepped channel potential and prior to (vi).

10. The method as in claim 7, further comprising removing the mask prior to (vi).

11. A method of forming a camera comprising:

(a) providing a camera body;

(b) providing a charge-coupled device in the camera body, the method of providing the charge-coupled device comprising;

(i) forming a well or a substrate of a first conductivity type;

(ii) forming a buried channel of a second conductivity type;

(iii) forming a plurality of first gate electrodes;

(iv) partially coating the plurality of first gate electrodes with a mask substantially aligned to an edge of each first gate electrode;

(v) producing a stepped channel potential in the buried channel by, implanting ions of the first conductivity type with sufficient energy to simultaneously penetrate into the buried channel that is between the plurality of first gate electrodes and penetrate through the uncoated portions of the plurality of first gate electrodes and into the buried channel;

(vi) producing a larger potential step in the stepped channel potential by implanting ions of the first conductivity type with sufficient energy to penetrate into the buried channel that is between the plurality of first gate electrodes but not into the uncoated portions of the plurality of first gate electrodes; and

(vii) forming a plurality of second gate electrodes covering regions of the buried channel between the first gate electrodes.

12. The method as in claim 11, further comprising removing the mask prior to (vii).