Monolithic structures including alignment and/or retention fixtures for accepting components

• US 7,811,427 B2
• Filed: 03/12/2007
• Issued: 10/12/2010
• Est. Priority Date: 10/01/2002
• Status: Active Grant

• Current Assignee: Microfabrica Incorporated (Technoprobe S.P.A.)
• Original Assignee: Microfabrica Incorporated (Technoprobe S.P.A.)
• Inventors: Feinberg, Daniel I., Cohen, Adam L., Bang, Christopher A.
• Primary Examiner(s): Bell; Bruce F
• Application Number:
  US11/685,118
• Publication Number:
  US 20080062638A1
• Time in Patent Office: 1,310 Days
• Field of Search: 204/297.05, 204/224.M, 361/807, 382/141, 382/144, 382/145, 382/147, 382/151, 430312-316, 430/318, 430/319, 430/329, 430/331, 205/118, 205/122, 205/135, 205/145, 205/170, 205/220, 205/223
• US Class Current: 204/297.05
• CPC Class Codes: B81B 2201/042 Micromirrors, not used as optical switches
• CPC Class Codes: B81C 2203/051 Active alignment, e.g. using internal or external actuators, magnets, sensors, marks or marks detectors
• CPC Class Codes: B81C 3/002 Aligning microparts
• CPC Class Codes: B81C 3/008 Aspects related to assembling from individually processed components, not covered by groups B81C3/001 - B81C3/002
• CPC Class Codes: G01P 1/023 for acceleration measuring devices
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: H01P 1/202 Coaxial filters cascaded coaxial cavities H01P1/205
• CPC Class Codes: H01P 11/00 Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
• CPC Class Codes: H01P 11/005 Manufacturing coaxial lines
• CPC Class Codes: H01P 11/007 Manufacturing frequency-selective devices resonators H01P11/008
• CPC Class Codes: H01P 3/06 Coaxial lines
• CPC Class Codes: H01P 5/183 at least one of the guides being a coaxial line
• CPC Class Codes: H05K 3/4647 by applying an insulating layer around previously made via studs

Abstract

Permanent or temporary alignment and/or retention structures for receiving multiple components are provided. The structures are preferably formed monolithically via a plurality of deposition operations (e.g. electrodeposition operations). The structures typically include two or more positioning fixtures that control or aid in the positioning of components relative to one another, such features may include (1) positioning guides or stops that fix or at least partially limit the positioning of components in one or more orientations or directions, (2) retention elements that hold positioned components in desired orientations or locations, and/or (3) positioning and/or retention elements that receive and hold adjustment modules into which components can be fixed and which in turn can be used for fine adjustments of position and/or orientation of the components.

Claims

1. An alignment structure for receiving a plurality of components, comprising:

a base;

a plurality of alignment fixtures attached to the base and having desired positions relative to one another,

wherein the base and the alignment fixtures are substantially monolithic, and wherein the alignment fixtures comprise a material deposited on substantially a layer-by-layer basis in their respective relative positions, and wherein the structure comprises at least two conductive paths separated from one another by a dielectric, wherein at least one of the paths meets a criteria selected from the group consisting of;

(1) the at least one path forms a connection between at least two electrical contact points on a single component;

(2) the at least one path forms a connection between electrical contact points on at least two different components;

(3) the at least one path allows an electrical connection to be made from the structure to a separate structure;

(4) the structure is adapted to be located in a substantially hermetic package and the at least one path allows an electrical connection to be made from the structure to a separate structure that is external to the package;

(5) the at least one path makes an electrical connection to an electrically functional device that was formed along with the structure; and

(6) the at least one path comprises a component that modifies an signal selected from the group consisting of RF signals and microwave signals.

2. The structure of claim 1 wherein the base and at least a portion of the alignment fixtures are connected by a deformable material that allows fine adjustments of the fixtures relative to the base to be made to optimize alignment of components.

3. The structure of claim 2 wherein the deformable material comprises a low melting point metal that can be heated to allow deformation.

4. The structure of claim 2 wherein the deformable material is a material that comprises a structural configuration that allows relatively easy deformation along at least one axis.

5. The structure of claim 1 wherein at least one alignment fixture comprises at least one stop in a direction of motion parallel to a plane of a surface of the base.

6. The structure of claim 1 wherein at least one alignment fixture comprises at least one stop in a direction of motion perpendicular to a plane of a surface of the base.

7. The structure of claim 1 additionally comprising retention fixtures that provide for retention of multiple components.

8. The structure of claim 1 wherein the alignment fixtures comprise spring elements that provide for retention of components.

9. The structure of claim 1 further comprising spring elements that provide component retention and whose production comprises a process selected from the group consisting of:

(1) selectively electrodepositing a first conductive material and electrodepositing a second conductive material, wherein one of the first or second conductive materials is a sacrificial material and the other is a structural material;

(2) electrodepositing a first conductive material, selectively etching the first structural material to create at least one void, and electrodepositing a second conductive material to fill the at least one void;

(3) electrodepositing at least one conductive material, depositing at least one flowable dielectric material, and depositing a seed layer of conductive material in preparation for formation of a next layer of electrodeposited material, and

(4) selectively electrodepositing a first conductive material, then electrodepositing a second conductive material, then selectively etching one of the first or second conductive materials, and then electrodepositing a third conductive material, wherein at least one of the first, second, or third conductive materials is a sacrificial material and at least one of the remaining two conductive materials is a structural material.

10. A device, comprising:

(a) an alignment structure, comprising;

(1) a base;

(2) a plurality of alignment fixtures adhered to the base and having desired positions relative to one another;

(b) a plurality of components mounted on the alignment structure in positions dictated by the alignment fixtures,

wherein

the base and the alignment fixtures are monolithic, and

wherein the alignment fixtures comprise a material deposited on substantially a layer-by-layer basis in their respective relative positions, and wherein the structure comprises at least two conductive paths separated from one another by a dielectric, wherein at least one of the paths meets a criteria selected from the group consisting of;

(1) the at least one path forms a connection between at least two electrical contact points on a single component;

(2) the at least one path forms a connection between electrical contact points on at least two different components;

(3) the at least one path allows an electrical connection to be made from the structure to a separate structure;

(4) the structure is adapted to be located in a substantially hermetic package and the at least one path allows an electrical connection to be made from the structure to a separate structure that is external to the package;

(5) the at least one path makes an electrical connection to an electrically functional device that was formed along with the structure; and

(6) the at least one path comprises a component that modifies an signal selected from the group consisting of RF signals and microwave signals.

11. The device of claim 10 wherein the base and at least a portion of the alignment fixtures are connected by a deformable material that allows fine adjustments of the fixtures relative to the base to be made to optimize alignment of components.

12. The device of claim 11 wherein the deformable material comprises a low melting point metal that can be heated to allow deformation.

13. The device of claim 12 wherein the deformable material is a material that comprises a structural configuration that allows relatively easy deformation along at least one axis.

14. The device of claim 10 wherein at least one alignment fixture comprises at least one stop in a direction of motion parallel to a plane of a surface of the base.

15. The device of claim 10 wherein at least one alignment fixture comprises at least one stop in a direction of motion perpendicular to a plane of a surface of the base.

16. The device of claim 10 additionally comprising retention fixtures that provide for retention of multiple components.

17. The device of claim 10 wherein the alignment fixtures comprise spring elements that provide for retention of components.

18. The device of claim 10 further comprising spring elements that provide component retention and wherein production of at least a portion of the device comprises a process selected from the group consisting of:

(1) selectively electrodepositing a first conductive material and electrodepositing a second conductive material, wherein one of the first or second conductive materials is a sacrificial material and the other is a structural material;

(2) electrodepositing a first conductive material, selectively etching the first structural material to create at least one void, and electrodepositing a second conductive material to fill the at least one void;

(3) electrodepositing at least one conductive material, depositing at least one flowable dielectric material, and depositing a seed layer of conductive material in preparation for formation of a next layer of electrodeposited material, and

(4) selectively electrodepositing a first conductive material, then electrodepositing a second conductive material, then selectively etching one of the first or second conductive materials, and then electrodepositing a third conductive material, wherein at least one of the first, second, or third conductive materials is a sacrificial material and at least one of the remaining two conductive materials is a structural material.