Method of fabricating vertical structure LEDs
First Claim
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1. A vertical light-emitting device, comprising:
- a conductive support structure;
a first electrode over the conductive support structure;
a semiconductor structure over the first electrode, the semiconductor structure including a first-type semiconductor layer over the first electrode, an active layer over the first-type semiconductor layer and a second-type semiconductor layer over the active layer;
a passivation layer contacting at least the first-type semiconductor layer of the semiconductor structure, wherein the portion of the passivation layer that contacts the first-type semiconductor layer is located above at least a portion of the upper surface of the conductive support structure; and
a second electrode over the semiconductor structure, wherein the first electrode and the second electrode are respectively located at opposite sides of the semiconductor structure.
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Abstract
A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.
122 Citations
78 Claims
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1. A vertical light-emitting device, comprising:
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a conductive support structure; a first electrode over the conductive support structure; a semiconductor structure over the first electrode, the semiconductor structure including a first-type semiconductor layer over the first electrode, an active layer over the first-type semiconductor layer and a second-type semiconductor layer over the active layer; a passivation layer contacting at least the first-type semiconductor layer of the semiconductor structure, wherein the portion of the passivation layer that contacts the first-type semiconductor layer is located above at least a portion of the upper surface of the conductive support structure; and a second electrode over the semiconductor structure, wherein the first electrode and the second electrode are respectively located at opposite sides of the semiconductor structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A vertical light-emitting device, comprising:
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a conductive support structure; a first-type semiconductor layer over the conductive support structure; a first electrode disposed between the conductive support structure and the first-type semiconductor layer such that first-type semiconductor layer is over the first electrode; a second-type semiconductor layer over the first-type semiconductor layer; a light emitting layer disposed between the first-type semiconductor layer and the second-type semiconductor layer; a passivation layer contacting at least one of the first-type semiconductor layer, the light emitting layer, the second-type semiconductor layer and the first electrode, wherein the portion of the passivation layer contacting the first-type semiconductor layer is located above at least a portion of the conductive support structure; and a second electrode over the second-type semiconductor layer. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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48. A vertical light-emitting device, comprising:
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a conductive support structure; a p-type GaN-based layer over the conductive support structure; a first electrode disposed between the conductive support structure and the p-type GaN-based layer such that p-type GaN-based layer is disposed over the first electrode; an n-type GaN-based layer over the p-type GaN-based layer; a light emitting layer disposed between the p-type GaN-based layer and the n-type GaN-based layer; a passivation layer contacting at least one of the p-type GaN-based layer, the light emitting layer, the n-type GaN-based layer and the first electrode; a second electrode over the n-type GaN-based layer, wherein the contact area between the passivation layer and the n-type GaN-based layer is greater than the contact area between the passivation layer and the p-type GaN-based layer. - View Dependent Claims (49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63)
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64. A vertical light-emitting device, comprising:
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a conductive support structure; a first electrode over the conductive support structure; a semiconductor structure over the first electrode, the semiconductor structure including a first-type semiconductor layer over the first electrode, an active layer over the first-type semiconductor layer and a second-type semiconductor layer over the active layer; a passivation layer contacting the semiconductor structure; and a second electrode over the semiconductor structure, wherein the first electrode and the second electrode are respectively located at opposite sides of the semiconductor structure, and wherein a metal coating is disposed between the conductive support structure and the first electrode. - View Dependent Claims (65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78)
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Specification
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Current AssigneeSuzhou Lekin Semiconductor Company Limited
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Original AssigneeLG Electronics, Inc. (LG Corporation)
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InventorsYoo, Myung Cheol, Jeong, In-Kwon, Lee, Jong-Lam
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Primary Examiner(s)Mandala; Victor A
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Application NumberUS12/458,703Publication NumberTime in Patent Office455 DaysField of Search257/99, 257/79, 257/103, 257/E33.025US Class Current257/99CPC Class CodesH01C 7/006 Thin film resistorsH01C 7/008 Thermistors H01C7/02 - H01C...H01L 27/0802 Resistors onlyH01L 28/20 ResistorsH01L 33/0025 comprising only AIIIBV comp...H01L 33/007 comprising nitride compoundsH01L 33/0093 Wafer bonding; Removal of t...H01L 33/0095 Post-treatment of devices, ...H01L 33/06 within the light emitting r...H01L 33/12 with a stress relaxation st...H01L 33/32 containing nitrogenH01L 33/36 characterised by the electr...H01L 33/38 with a particular shapeH01L 33/40 Materials thereforH01L 33/44 characterised by the coatin...H01L 33/62 Arrangements for conducting...Y10S 438/958 Passivation layerY10S 438/977 Thinning or removal of subs...
