Partial block data programming and reading operations in a non-volatile memory

  • US 7,818,490 B2
  • Filed: 10/13/2005
  • Issued: 10/19/2010
  • Est. Priority Date: 01/19/2001
  • Status: Expired due to Fees
First Claim
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1. A method of operating a memory system of reprogrammable non-volatile charge storage elements organized in blocks of a minimum number of storage elements that are erasable together as a unit and in pages of storage elements within the blocks that have specified offset positions within their respective blocks and which are individually programmable as a unit, comprising:

  • as part of writing data into pages, recording an indication of a time from a clock source that data are written into individual pages,updating data previously written into one or more pages of one of original data blocks by writing the updated data into one or more update pages of an update data block and logically linking data of the corresponding previously written pages and update data pages, wherein the updated data are caused to be writable into pages of the update data block having different offset positions than the pages of the original data block into which the logically linked data being updated was previously written, andwhen reading data of two or more logically linked data pages, read the indications of the times that the data have been stored in the two or more pages and use the data in the two or more pages having more recent time indications without using data in the two or more pages having older time indications.

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