Semiconductor light emitting device having roughness layer

  • US 7,821,024 B2
  • Filed: 12/19/2008
  • Issued: 10/26/2010
  • Est. Priority Date: 12/20/2007
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor light emitting device comprising:

  • a first conductive semiconductor layer;

    an active layer on the first conductive semiconductor layer;

    a second conductive semiconductor layer on the active layer; and

    a roughness layer on the second conductive semiconductor layer,wherein the second conductive semiconductor layer includes a shape of multiple horns,wherein the roughness layer includes a shape of multiple horns, andwherein the second conductive semiconductor layer comprises a roughness in which horn shapes and inverse-horn-shaped shapes are alternately formed, and the roughness has a height of about 0.5 μ

    m to about 1.2 μ

    m and a diameter of about 0.3 μ

    m to about 1.0 μ

    m.

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