Method of manufacturing vertical light emitting diode

  • US 7,838,315 B2
  • Filed: 06/02/2008
  • Issued: 11/23/2010
  • Est. Priority Date: 11/23/2007
  • Status: Active Grant
First Claim
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1. A method of manufacturing a vertical LED, comprising the steps of:

  • preparing a sapphire substrate;

    forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate;

    forming buffer films on portions of the surface of the p-type nitride semiconductor layer;

    forming a p-electrode on the resulting structure having the buffer films formed thereon;

    forming a structure support layer on the resulting structure having the p-electrode formed thereon;

    removing the sapphire substrate through an LLO (Laser Lift-Off) process;

    isolating the light emitting structure into unit LED elements by removing portions of the light emitting structure corresponding to position of the buffer films through an ISO (Isolation) process; and

    forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures.

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