Bulk acoustic resonator electrical impedance transformers

• US 7,855,618 B2
• Filed: 04/30/2008
• Issued: 12/21/2010
• Est. Priority Date: 04/30/2008
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies Wireless IP Singapore Pte Limited (Broadcom, Inc.)
• Inventors: Frank, Michael L., Ruby, Richard C., Jamneala, Tiberiu
• Primary Examiner(s): Takaoka; Dean O
• Application Number:
  US12/112,633
• Publication Number:
  US 20090273415A1
• Time in Patent Office: 965 Days
• Field of Search: 333/187, 333/188, 333/189, 333/190, 333/191, 333/192
• US Class Current: 333/187
• CPC Class Codes: H03H 9/0095 using bulk acoustic wave devices
• CPC Class Codes: H03H 9/132 characterized by a particular shape
• CPC Class Codes: H03H 9/583 comprising a plurality of piezoelectric layers acoustically coupled
• CPC Class Codes: H03H 9/587 Air-gaps

Abstract

An electrical impedance transformer comprises a first film bulk acoustic resonator (FBAR), having a first electrical impedance and a first resonance frequency. The electrical impedance transformer also comprises: a second FBAR, having a second electrical impedance and a second resonance frequency, and being disposed over the first FBAR. The electrical impedance transformer also includes a decoupling layer disposed between the first and the second FBARs. The first electrical impedance differs from the second electrical impedance and the first and second resonance frequencies are substantially the same.

Claims

1. An electrical impedance transformer, comprising:

a first film bulk acoustic resonator (FBAR), having a first electrical impedance and a first resonance frequency comprising;

a first set of electrodes, having a first acoustic impedance, the first set of electrodes comprising a first material; and

a first piezoelectric layer having a first thickness, wherein the first piezoelectric layer is disposed between the first set of electrodes;

a second FBAR, having a second electrical impedance and a second resonance frequency, and being disposed over the first FBAR, the second FBAR comprising;

a second set of electrodes, having a second acoustic impedance, which differs from the first acoustic impedance, the second set of electrodes comprising a second material; and

a second piezoelectric layer having a second thickness, wherein the second piezoelectric layer is disposed between the second set of electrodes, wherein the first thickness is less than the second thickness, and the first material is different than the second material; and

a decoupling layer disposed between the first and the second FBARs, wherein the first electrical impedance differs from the second electrical impedance and the first and second resonance frequencies are substantially the same.

2. An electrical impedance transformer as claimed in claim 1, wherein the first set of electrodes comprise tungsten (W).

3. An electrical impedance transformer as claimed in claim 1, wherein the second set of electrodes comprise tungsten (W).

4. A communication device, comprising:

a first port;

a second port; and

an electrical impedance transformer between the first port and the second port, the transformer comprising;

a first film bulk acoustic resonator (FBAR), having a first electrical impedance and a first resonance frequency comprising;

a first set of electrodes, having a first acoustic impedance, the first set of electrodes comprising a first material; and

a first piezoelectric layer having a first thickness, wherein the first piezoelectric layer is disposed between the first set of electrodes;

a second FBAR, having a second electrical impedance and a second resonance frequency, and being disposed over the first FBAR, the second FBAR comprising;

a second set of electrodes, having a second acoustic impedance, which differs from the first acoustic impedance, the second set of electrodes comprising a second material; and

a second piezoelectric layer having a second thickness, wherein the second piezoelectric layer is disposed between the second set of electrodes; and

a decoupling layer disposed between the first and the second FBARs, wherein the first electrical impedance differs from the second electrical impedance and the first and second resonance frequencies are substantially the same, wherein the first thickness is less than the second thickness, and the first material is different than the second material.

5. An electrical impedance transformer as claimed in claim 4, wherein the first set of electrodes comprise tungsten (W).

6. An electrical impedance transformer as claimed in claim 4, wherein the second set of electrodes comprise tungsten (W).

7. A communication device as claimed in claim 4, wherein the first port is an input and comprises an antenna.

8. A communication device as claimed in claim 4, wherein the second port is an output and is connected to an amplifier.

9. A communication device as claimed in claim 4, wherein the first port is an output and comprises an antenna.

10. A communication device as claimed in claim 4, wherein the second port is an input and is connected to an amplifier.

11. An electrical impedance transformer, comprising:

a first film bulk acoustic resonator (FBAR), having a first electrical impedance and a first resonance frequency comprising;

a first set of electrodes, having a first acoustic impedance, the first set electrodes comprising a first material; and

a first piezoelectric layer having a first thickness, wherein the first piezoelectric layer is disposed between the first set of electrodes;

a second FBAR, having a second electrical impedance and a second resonance frequency, and being disposed over the first FBAR, the second FBAR comprising;

a second set of electrodes, having a second acoustic impedance, which differs from the first acoustic impedance, the second set electrodes comprising a second material; and

a second piezoelectric layer having a second thickness, wherein the second piezoelectric layer is disposed between the second set of electrodes, wherein the second thickness is less than the first thickness, and the first material is different than the second material; and

a decoupling layer disposed between the first and the second FBARs, wherein the first electrical impedance differs from the second electrical impedance and the first and second resonance frequencies are substantially the same.

12. A communication device, comprising:

a first port;

a second port; and

an electrical impedance transformer between the first port and the second port, the transformer comprising;

a first film bulk acoustic resonator (FBAR), having a first electrical impedance and a first resonance frequency comprising;

a first set of electrodes, having a first acoustic impedance, the first set of electrodes comprising a first material; and

a first piezoelectric layer having a first thickness, wherein the first piezoelectric layer is disposed between the first set of electrodes;

a second FBAR, having a second electrical impedance and a second resonance frequency, and being disposed over the first FBAR, the second FBAR comprising;

a second set of electrodes, having a second acoustic impedance, which differs from the first acoustic impedance, the second set of electrodes comprising a second material; and

a second piezoelectric layer having a second thickness, wherein the second piezoelectric layer is disposed between the second set of electrodes; and

a decoupling layer disposed between the first and the second FBARs, wherein the first electrical impedance differs from the second electrical impedance and the first and second resonance frequencies are substantially the same, wherein the second thickness is less than the first thickness, and the first material is different than the second material.