Semiconductor device and method of fabricating the same

  • US 7,858,480 B2
  • Filed: 02/20/2009
  • Issued: 12/28/2010
  • Est. Priority Date: 02/21/2008
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate comprising an element isolation region;

    first and second gate electrodes formed in substantially parallel on the semiconductor substrate via respective gate insulating films;

    first and second channel regions respectively formed in regions of the semiconductor substrate under the first and second gate electrodes;

    a source/drain region formed in a region of the semiconductor substrate sandwiching the first and second channel regions;

    a first stress film formed so as to cover the semiconductor substrate and the first and second gate electrodes; and

    a second stress film formed in at least a portion of a void, the void being formed in a region between the first and second gate electrodes, the void being formed in the first stress film or in an interlayer insulating film formed on the first stress film.

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