Semiconductor device and method of fabricating the same

  • US 7,858,480 B2
  • Filed: 02/20/2009
  • Issued: 12/28/2010
  • Est. Priority Date: 02/21/2008
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor device, comprising:

  • a semiconductor substrate comprising an element isolation region;

    first and second gate electrodes formed in substantially parallel on the semiconductor substrate via respective gate insulating films;

    first and second channel regions respectively formed in regions of the semiconductor substrate under the first and second gate electrodes;

    a source/drain region formed in a region of the semiconductor substrate sandwiching the first and second channel regions;

    a first stress film formed so as to cover the semiconductor substrate and the first and second gate electrodes; and

    a second stress film formed in at least a portion of a void, the void being formed in a region between the first and second gate electrodes, the void being formed in the first stress film or in an interlayer insulating film formed on the first stress film.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×